JP5252403B2 - ベース拡散エリアを小さくした太陽電池 - Google Patents
ベース拡散エリアを小さくした太陽電池 Download PDFInfo
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- 238000009792 diffusion process Methods 0.000 title claims description 218
- 239000002800 charge carrier Substances 0.000 claims description 72
- 239000002184 metal Substances 0.000 claims description 71
- 239000012212 insulator Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 62
- 235000012431 wafers Nutrition 0.000 description 30
- 239000011295 pitch Substances 0.000 description 16
- 230000006798 recombination Effects 0.000 description 16
- 238000005215 recombination Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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Description
[項目1]
太陽電池の背面に形成されている、前記太陽電池内の少数電荷キャリアを収集するための連続するエミッタ拡散領域、
前記太陽電池の背面に形成された前記連続する拡散領域によって取り囲まれている、前記太陽電池内の多数電荷キャリアを収集するための複数のドット状ベース拡散領域、
前記複数のドット状ベース拡散領域の少なくとも2つのドット状ベース拡散領域に電気的に結合された第1の金属グリッド、
前記第1の金属グリッドと前記少なくとも2つのドット状ベース拡散領域との間の第1の絶縁体層であって、前記第1の絶縁体層を貫通する少なくとも2つのコンタクトホールを通って前記少なくとも2つのドット状ベース拡散領域に電気的に結合されている絶縁体層、並びに
前記連続するエミッタ拡散領域に電気的に結合する第2の金属グリッドを備えており、
前記第1の金属グリッド及び前記第2の金属グリッドが、前記太陽電池の背面に形成されている、太陽電池。
[項目2]
前記連続するエミッタ拡散領域及び前記複数のドット状ベース拡散領域が、N型シリコンウェハ内に形成されており、前記連続するエミッタ拡散領域が、P型ドープ領域を含み、前記複数のドット状ベース拡散領域のそれぞれが、N型ドープ領域を含む、項目1に記載の太陽電池。
[項目3]
前記連続するエミッタ拡散領域がホウ素でドープされており、前記複数のドット状ベース拡散領域がリンでドープされている、項目2に記載の太陽電池。
[項目4]
前記第1の絶縁体層が、前記第2の金属グリッドと前記連続するエミッタ拡散領域との間にあり、少なくとも別のコンタクトホールを備えており、該コンタクトホールを通って、前記第2の金属グリッドが前記連続するエミッタ拡散領域に電気的に結合されている、項目1に記載の太陽電池。
[項目5]
前記第1の絶縁体層を貫通する前記少なくとも2つのコンタクトホールがそれぞれ、前記複数のドット状ベース拡散領域のドット状ベース拡散領域の直径よりも小さい直径を有する、項目1に記載の太陽電池。
[項目6]
前記第1の金属グリッドと前記第1の絶縁体との間に第2の絶縁体をさらに備えており、前記第1の金属グリッドが、前記第1及び第2の絶縁体層を貫通する少なくとも2つのコンタクトホールを通って、前記少なくとも2つのドット状ベース拡散領域に電気的に結合されている、項目1に記載の太陽電池。
[項目7]
前記複数のドット状ベース拡散領域が、太陽電池の背面に周期的に配置されている、項目5に記載の太陽電池。
[項目8]
太陽電池の製造方法であって、
第1のドープ層を基板の第1の表面上に形成し、前記第1のドープ層が、前記基板を露出させる複数の開口部を備えており、
前記第1のドープ層内の前記複数の開口部内に、第2のドープ層を形成し、
前記第1のドープ層から第1のドーパントを拡散させ、前記太陽電池の背面の連続するエミッタ拡散領域を形成し、該エミッタ拡散領域が、前記太陽電池内の少数電荷キャリアを収集するように構成されており、
前記複数の開口部内に形成された前記ドープ層から第2のドーパントを拡散させ、前記太陽電池の背面の複数のベース拡散領域を形成し、該複数のベース拡散領域が、前記太陽電池内の多数電荷キャリアを収集するように構成されており、
前記太陽電池の背面に第1の金属グリッドを形成し、該第1の金属グリッドが、前記エミッタ拡散領域に電気的に結合されており、
前記太陽電池の背面に第2の金属グリッドを形成し、該第2の金属グリッドが、前記複数のベース拡散領域のベース拡散領域に電気的に結合されている
ことを含む、方法。
[項目9]
前記第2のドープ層が、前記第1のドープ層上にも形成される、項目8に記載の方法。
[項目10]
前記基板がN型シリコンウェハを含む、項目8に記載の方法。
[項目11]
前記第1のドーパントがP型ドーパントを含み、前記第2のドーパントがN型ドーパントを含む、項目8に記載の方法。
[項目12]
前記複数の開口部のそれぞれがドット形状を有する、項目8に記載の方法。
[項目13]
前記第2の金属グリッドと前記エミッタ拡散領域との間に絶縁体層を形成し、該絶縁体層がコンタクトホールを備えており、該コンタクトホールを通って、前記第2の金属グリッドが、前記エミッタ拡散領域に電気的に結合されること
をさらに含む、項目8に記載の方法。
[項目14]
前記第1及び第2のドープ層が、二酸化シリコンを含む、項目8に記載の方法。
[項目15]
太陽電池の背面において多数電荷キャリアを収集するように構成された複数のベース拡散領域、
前記太陽電池の背面において少数電荷キャリアを収集するように構成された、前記複数のベース拡散領域の各ベース拡散領域の周りを取り囲んでいる連続するエミッタ拡散領域、
前記複数のベース拡散領域の少なくとも1つのベース拡散領域に電気的に結合されている第1の金属グリッド、並びに
前記連続するエミッタ拡散領域に電気的に結合されている第2の金属グリッド
を備えている、太陽電池。
[項目16]
前記複数のベース拡散領域がそれぞれ、非長方形の形状を有する、項目15に記載の太陽電池。
[項目17]
前記第1の金属グリッドと前記少なくとも1つのベース拡散領域との間の第1の絶縁体層をさらに備えており、前記第1の金属グリッドが、前記第1の絶縁体層内のコンタクトホールを通って、前記少なくとも1つのベース拡散領域に電気的に結合されている、項目15に記載の太陽電池。
[項目18]
前記第1の絶縁体層と前記第1の金属グリッドとの間に第2の絶縁体層を備えており、前記第1の金属グリッドが、前記第1及び第2の絶縁体層を貫通するコンタクトホールを通って、前記少なくとも1つのベース拡散領域に電気的に結合されている、項目17に記載の太陽電池。
[項目19]
前記第1及び第2の金属グリッドが、前記太陽電池の背面上に形成されている、項目15に記載の太陽電池。
[項目20]
前記複数のベース拡散領域及び前記連続するエミッタ拡散領域が、N型シリコンウェハ内に形成されている、項目15に記載の太陽電池。
Claims (10)
- 太陽電池の背面に形成されている、前記太陽電池内の少数電荷キャリアを収集するための連続するエミッタ拡散領域、
前記太陽電池の背面に形成された前記連続するエミッタ拡散領域によって取り囲まれている、前記太陽電池内の多数電荷キャリアを収集するための複数のドット状ベース拡散領域、
前記複数のドット状ベース拡散領域の少なくとも2つのドット状ベース拡散領域に電気的に結合された第1の金属グリッド、
前記第1の金属グリッドと、前記少なくとも2つのドット状ベース拡散領域および前記少なくとも2つのドット状ベース拡散領域の間の前記連続するエミッタ拡散領域との間の第1の絶縁体層、並びに
前記連続するエミッタ拡散領域に電気的に結合する第2の金属グリッド
を備え、
前記第1の金属グリッドは、前記第1の絶縁体層を貫通する少なくとも2つのコンタクトホールを通って前記少なくとも2つのドット状ベース拡散領域に電気的に結合されており、
前記第1の金属グリッド及び前記第2の金属グリッドが、前記太陽電池の背面に形成されている、太陽電池。 - 前記連続するエミッタ拡散領域及び前記複数のドット状ベース拡散領域が、N型シリコンウェハ内に形成されており、前記連続するエミッタ拡散領域が、P型ドープ領域を含み、前記複数のドット状ベース拡散領域のそれぞれが、N型ドープ領域を含む、請求項1に記載の太陽電池。
- 前記連続するエミッタ拡散領域がホウ素でドープされており、前記複数のドット状ベース拡散領域がリンでドープされている、請求項2に記載の太陽電池。
- 太陽電池の製造方法であって、
第1のドープ層を基板の第1の表面上に形成し、前記第1のドープ層が、前記基板を露出させる複数の開口部を備えており、
前記第1のドープ層内の前記複数の開口部内に、第2のドープ層を形成し、
前記第1のドープ層から第1のドーパントを拡散させ、前記太陽電池の背面の連続するエミッタ拡散領域を形成し、該エミッタ拡散領域が、前記太陽電池内の少数電荷キャリアを収集するように構成されており、
前記複数の開口部内に形成された前記ドープ層から第2のドーパントを拡散させ、前記太陽電池の背面の複数のベース拡散領域を形成し、該複数のベース拡散領域が、前記太陽電池内の多数電荷キャリアを収集するように構成されており、
前記太陽電池の背面に第1の金属グリッドを形成し、該第1の金属グリッドが、前記エミッタ拡散領域に電気的に結合されており、
前記太陽電池の背面に第2の金属グリッドを形成し、該第2の金属グリッドが、前記複数のベース拡散領域のベース拡散領域に電気的に結合されている
ことを含む、方法。 - 前記第2のドープ層が、前記第1のドープ層上にも形成される、請求項4に記載の方法。
- 前記基板がN型シリコンウェハを含む、請求項4または請求項5に記載の方法。
- 前記第1のドーパントがP型ドーパントを含み、前記第2のドーパントがN型ドーパントを含む、請求項4から請求項6のいずれか1つに記載の方法。
- 太陽電池の背面において多数電荷キャリアを収集するように構成された複数のベース拡散領域、
前記太陽電池の背面において少数電荷キャリアを収集するように構成された、前記複数のベース拡散領域の各ベース拡散領域の周りを取り囲んでいる連続するエミッタ拡散領域、
前記複数のベース拡散領域の少なくとも1つのベース拡散領域に電気的に結合されている第1の金属グリッド、並びに
前記連続するエミッタ拡散領域に電気的に結合されている第2の金属グリッド
を備えている、太陽電池。 - 前記複数のベース拡散領域がそれぞれ、非長方形の形状を有する、請求項8に記載の太陽電池。
- 前記第1の金属グリッドと前記少なくとも1つのベース拡散領域との間の第1の絶縁体層をさらに備えており、前記第1の金属グリッドが、前記第1の絶縁体層内のコンタクトホールを通って、前記少なくとも1つのベース拡散領域に電気的に結合されている、請求項8または請求項9に記載の太陽電池。
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