JP5250418B2 - ラインエッジ粗さを低減させた特徴のエッチング - Google Patents
ラインエッジ粗さを低減させた特徴のエッチング Download PDFInfo
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- JP5250418B2 JP5250418B2 JP2008526963A JP2008526963A JP5250418B2 JP 5250418 B2 JP5250418 B2 JP 5250418B2 JP 2008526963 A JP2008526963 A JP 2008526963A JP 2008526963 A JP2008526963 A JP 2008526963A JP 5250418 B2 JP5250418 B2 JP 5250418B2
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- 238000005530 etching Methods 0.000 title claims description 30
- 239000010410 layer Substances 0.000 claims description 147
- 229920002120 photoresistant polymer Polymers 0.000 claims description 108
- 238000000034 method Methods 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 32
- 230000008021 deposition Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 15
- 239000002356 single layer Substances 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005513 bias potential Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 229910008482 TiSiN Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- 229910004166 TaN Inorganic materials 0.000 claims 2
- 229910004160 TaO2 Inorganic materials 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052593 corundum Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- NQKXFODBPINZFK-UHFFFAOYSA-N dioxotantalum Chemical compound O=[Ta]=O NQKXFODBPINZFK-UHFFFAOYSA-N 0.000 claims 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 2
- 239000007789 gas Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 241000699666 Mus <mouse, genus> Species 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241000699670 Mus sp. Species 0.000 description 1
- -1 Si 3 N 2 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000012813 breadcrumbs Nutrition 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
1つの実施例では、基板204が、被エッチング層208と、ARC層210と、パターン形成されたフォトレジストマスク212とともに、エッチングチャンバ内に配される。
Claims (13)
- エッチング層内に特徴を形成するための方法であって、
前記層の上に、フォトレジスト層を形成し、
フォトレジスト側壁をともなうフォトレジスト特徴を形成するために、前記フォトレジスト層をパターン形成し、
各サイクルは、前記フォトレジスト層上に層を堆積させる工程を含み、前記堆積層は、単分子層から20nmまでの厚さとなる複数のサイクルを実施することにより、前記フォトレジスト特徴の前記側壁の上に、厚さ100nm未満の側壁層を形成し、
前記フォトレジスト特徴を通して前記層内に特徴をエッチングし、
前記フォトレジスト層および前記側壁層を剥ぎ取る方法であり、
前記側壁層を形成する各サイクルは、更に、側壁層を残しつつ、前記フォトレジスト特徴の底部の上に形成された前記堆積層の部分を除去するために前記堆積層をエッチバックする
方法。 - 請求項1に記載の方法であって、
前記フォトレジスト層上への前記層の堆積は、プラズマ蒸着、およびプラズマ化学気相成長のうちの少なくとも1つを、120ボルト未満のバイアス電位で実施することにより行なわれる方法。 - 請求項1または請求項2記載の方法であって、更に、
前記フォトレジスト層上に前記層を堆積させる間に、前記基板を摂氏−80〜120度の温度に加熱する方法。 - 請求項1ないし請求項3のいずれかに記載の方法であって、
前記側壁の上への前記側壁層の堆積は、3〜10サイクルにわたって実施される方法。 - 請求項1ないし請求項4のいずれかに記載の方法であって、
前記フォトレジスト層上への前記層の堆積は、ポリマー、TEOS、SiO2、Si3N2、SiC、Si、Al2O3、AlN、Cu、HfO2、Mo、Ta、TaN、TaO2、Ti、TiN、TiO2、TiSiN、およびWのうちの少なくとも1つの層を堆積させることを含む方法。 - 請求項1ないし請求項5のいずれかに記載の方法であって、
前記エッチバックすることは、更に、前記フォトレジスト層の頂部の上の前記堆積層の部分を除去する方法。 - 請求項1ないし請求項6のいずれかに記載の方法によって形成される半導体デバイス。
- エッチング層内に特徴を形成するための方法であって、
フォトレジスト側壁をともなうフォトレジスト特徴を形成するために、前記エッチング層の上に、パターン形成されたフォトレジスト層を形成し、
複数のサイクルを実施することにより、前記フォトレジスト特徴の前記側壁の上に、厚さ100nm未満の側壁層を形成し、
前記各サイクルは、
単分子層から20nmまでの厚さを有する層をフォトレジスト層上に堆積させる工程と、
側壁層を残しつつ、前記フォトレジスト特徴の底部の上に形成された前記堆積層の部分を除去するために前記堆積層をエッチバックする工程と
を含み、
前記フォトレジスト特徴を通して前記エッチング層内に特徴をエッチングし、
前記フォトレジスト層および前記側壁層を剥ぎ取り、
前記フォトレジスト層上への前記層の堆積と、前記エッチバック、前記特徴のエッチング、および前記剥ぎ取りは、単一のプラズマチャンバ内で、in−situでなされる方法。 - 請求項8に記載の方法であって、
前記フォトレジスト層上への前記層の堆積は、プラズマ蒸着、およびプラズマ化学気相成長のうちの少なくとも1つを、120ボルト未満のバイアス電位で実施することにより行なわれる
方法。 - 請求項8または請求項9に記載の方法であって、更に、
前記フォトレジスト層上に前記層を堆積させる間に、前記基板を80〜120℃の温度に加熱する方法。 - 請求項8ないし請求項10のいずれかに記載の方法であって、
前記側壁の上への前記側壁層の堆積は、3〜10サイクルにわたって実施される
方法。 - 請求項8ないし請求項11のいずれかに記載の方法であって、
前記フォトレジスト層上への前記層の堆積は、ポリマー、TEOS、SiO2、Si3N2、SiC、Si、Al2O3、AlN、Cu、HfO2、Mo、Ta、TaN、TaO2、Ti、TiN、TiO2、TiSiN、およびWのうちの少なくとも1つの層を堆積させることを含む
方法。 - 請求項8ないし請求項12のいずれかに記載の方法によって形成される半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/208,098 US7273815B2 (en) | 2005-08-18 | 2005-08-18 | Etch features with reduced line edge roughness |
US11/208,098 | 2005-08-18 | ||
PCT/US2006/030028 WO2007021540A2 (en) | 2005-08-18 | 2006-08-01 | Etch features with reduced line edge roughness |
Related Child Applications (1)
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JP2013023716A Division JP2013110437A (ja) | 2005-08-18 | 2013-02-08 | ラインエッジ粗さを低減させた特徴のエッチング |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009505421A JP2009505421A (ja) | 2009-02-05 |
JP2009505421A5 JP2009505421A5 (ja) | 2009-09-10 |
JP5250418B2 true JP5250418B2 (ja) | 2013-07-31 |
Family
ID=37758048
Family Applications (2)
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JP2008526963A Active JP5250418B2 (ja) | 2005-08-18 | 2006-08-01 | ラインエッジ粗さを低減させた特徴のエッチング |
JP2013023716A Withdrawn JP2013110437A (ja) | 2005-08-18 | 2013-02-08 | ラインエッジ粗さを低減させた特徴のエッチング |
Family Applications After (1)
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JP2013023716A Withdrawn JP2013110437A (ja) | 2005-08-18 | 2013-02-08 | ラインエッジ粗さを低減させた特徴のエッチング |
Country Status (6)
Country | Link |
---|---|
US (2) | US7273815B2 (ja) |
JP (2) | JP5250418B2 (ja) |
KR (1) | KR101257532B1 (ja) |
CN (2) | CN103105744A (ja) |
TW (1) | TWI432605B (ja) |
WO (1) | WO2007021540A2 (ja) |
Families Citing this family (32)
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US7250371B2 (en) * | 2003-08-26 | 2007-07-31 | Lam Research Corporation | Reduction of feature critical dimensions |
US20060134917A1 (en) * | 2004-12-16 | 2006-06-22 | Lam Research Corporation | Reduction of etch mask feature critical dimensions |
US7273815B2 (en) * | 2005-08-18 | 2007-09-25 | Lam Research Corporation | Etch features with reduced line edge roughness |
US7682516B2 (en) * | 2005-10-05 | 2010-03-23 | Lam Research Corporation | Vertical profile fixing |
US7309646B1 (en) * | 2006-10-10 | 2007-12-18 | Lam Research Corporation | De-fluoridation process |
JP5108489B2 (ja) * | 2007-01-16 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
KR101573949B1 (ko) | 2007-11-08 | 2015-12-02 | 램 리써치 코포레이션 | 산화물 스페이서를 이용한 피치 감소 |
WO2009085694A2 (en) * | 2007-12-21 | 2009-07-09 | Lam Research Corporation | Protective layer for implant photoresist |
KR20100106501A (ko) * | 2007-12-21 | 2010-10-01 | 램 리써치 코포레이션 | 고 식각율 레지스트 마스크를 이용한 식각 |
KR101570551B1 (ko) * | 2008-03-11 | 2015-11-19 | 램 리써치 코포레이션 | 에칭층 내에 피쳐들을 에칭하기 위한 방법 |
US7772122B2 (en) * | 2008-09-18 | 2010-08-10 | Lam Research Corporation | Sidewall forming processes |
CN102308366B (zh) * | 2009-02-06 | 2015-08-12 | Lg化学株式会社 | 触摸屏及其制备方法 |
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US8304262B2 (en) * | 2011-02-17 | 2012-11-06 | Lam Research Corporation | Wiggling control for pseudo-hardmask |
US20130078804A1 (en) * | 2011-09-22 | 2013-03-28 | Nanya Technology Corporation | Method for fabricating integrated devices with reducted plasma damage |
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-
2005
- 2005-08-18 US US11/208,098 patent/US7273815B2/en active Active
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2006
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- 2013-02-08 JP JP2013023716A patent/JP2013110437A/ja not_active Withdrawn
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KR101257532B1 (ko) | 2013-04-23 |
CN103105744A (zh) | 2013-05-15 |
WO2007021540A3 (en) | 2007-12-21 |
WO2007021540A2 (en) | 2007-02-22 |
CN101292197A (zh) | 2008-10-22 |
US20070042607A1 (en) | 2007-02-22 |
KR20080046665A (ko) | 2008-05-27 |
US7273815B2 (en) | 2007-09-25 |
TWI432605B (zh) | 2014-04-01 |
US20070284690A1 (en) | 2007-12-13 |
TW200720482A (en) | 2007-06-01 |
JP2013110437A (ja) | 2013-06-06 |
JP2009505421A (ja) | 2009-02-05 |
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