JP5234718B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5234718B2
JP5234718B2 JP2007080300A JP2007080300A JP5234718B2 JP 5234718 B2 JP5234718 B2 JP 5234718B2 JP 2007080300 A JP2007080300 A JP 2007080300A JP 2007080300 A JP2007080300 A JP 2007080300A JP 5234718 B2 JP5234718 B2 JP 5234718B2
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Prior art keywords
chamber
film
semiconductor device
substrate
heat treatment
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JP2007080300A
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Japanese (ja)
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JP2008244017A5 (https=
JP2008244017A (ja
Inventor
秀昭 座間
巧 角田
千尋 長谷川
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Ulvac Inc
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Ulvac Inc
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  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007080300A 2007-03-26 2007-03-26 半導体装置の製造方法 Active JP5234718B2 (ja)

Priority Applications (1)

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JP2007080300A JP5234718B2 (ja) 2007-03-26 2007-03-26 半導体装置の製造方法

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JP2007080300A JP5234718B2 (ja) 2007-03-26 2007-03-26 半導体装置の製造方法

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JP2008244017A JP2008244017A (ja) 2008-10-09
JP2008244017A5 JP2008244017A5 (https=) 2010-05-06
JP5234718B2 true JP5234718B2 (ja) 2013-07-10

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102786690B1 (ko) 2020-01-29 2025-03-25 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 앵커 포인트를 갖는 라이너-프리 도전성 구조체

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200912025A (en) * 2007-09-03 2009-03-16 Ulvac Inc Method for manufacturing semiconductor device
JP5323425B2 (ja) * 2007-09-03 2013-10-23 株式会社アルバック 半導体装置の製造方法
WO2010098308A1 (ja) * 2009-02-24 2010-09-02 株式会社アルバック 有機化合物蒸気発生装置及び有機薄膜製造装置
JP5193913B2 (ja) * 2009-03-12 2013-05-08 東京エレクトロン株式会社 ＣＶＤ−Ｒｕ膜の形成方法および半導体装置の製造方法
JP2010225989A (ja) * 2009-03-25 2010-10-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
TWI809712B (zh) 2017-01-24 2023-07-21 美商應用材料股份有限公司 用於在基板上形成鈷層的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3224450B2 (ja) * 1993-03-26 2001-10-29 日本酸素株式会社 酸化ルテニウムの成膜方法
JP3371328B2 (ja) * 1997-07-17 2003-01-27 株式会社高純度化学研究所 ビス（アルキルシクロペンタジエニル）ルテニウム錯 体の製造方法およびそれを用いたルテニウム含有薄膜 の製造方法
JP4152028B2 (ja) * 1999-01-25 2008-09-17 株式会社Ａｄｅｋａ ルテニウム系薄膜の製造方法
JP2002212112A (ja) * 2001-01-22 2002-07-31 Tanaka Kikinzoku Kogyo Kk 化学気相蒸着用のルテニウム化合物並びにルテニウム薄膜及びルテニウム化合物薄膜の化学気相蒸着方法。
JP4517565B2 (ja) * 2001-09-12 2010-08-04 東ソー株式会社 ルテニウム錯体、その製造方法、及び薄膜の製造方法
JP4097979B2 (ja) * 2002-04-18 2008-06-11 田中貴金属工業株式会社 Ｃｖｄ用原料化合物及びルテニウム又はルテニウム化合物薄膜の化学気相蒸着方法
JP2005087697A (ja) * 2003-09-17 2005-04-07 Morio Takayama 収納式ペーパーホルダー
JP4771516B2 (ja) * 2005-03-04 2011-09-14 Ｊｓｒ株式会社 化学気相成長材料及び化学気相成長方法
JP2006324363A (ja) * 2005-05-17 2006-11-30 Elpida Memory Inc キャパシタおよびその製造方法
US7632351B2 (en) * 2005-08-08 2009-12-15 E. I. Du Pont De Nemours And Company Atomic layer deposition processes for the formation of ruthenium films, and ruthenium precursors useful in such processes
EP2053036A4 (en) * 2006-07-27 2011-04-13 Ube Industries ORGANUTOUTHENIUM COMPLEX AND METHOD FOR PRODUCING A THIN RUBBER FILM FILM USING THE RUTHENIUM COMPLEX
JP2008031541A (ja) * 2006-07-31 2008-02-14 Tokyo Electron Ltd Ｃｖｄ成膜方法およびｃｖｄ成膜装置
JP2010095795A (ja) * 2008-09-19 2010-04-30 Ube Ind Ltd ルテニウム含有薄膜、及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102786690B1 (ko) 2020-01-29 2025-03-25 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 앵커 포인트를 갖는 라이너-프리 도전성 구조체
US12400962B2 (en) 2020-01-29 2025-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Liner-free conductive structures with anchor points

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