JP5224430B2 - パワー半導体モジュール - Google Patents

パワー半導体モジュール Download PDF

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Publication number
JP5224430B2
JP5224430B2 JP2006250622A JP2006250622A JP5224430B2 JP 5224430 B2 JP5224430 B2 JP 5224430B2 JP 2006250622 A JP2006250622 A JP 2006250622A JP 2006250622 A JP2006250622 A JP 2006250622A JP 5224430 B2 JP5224430 B2 JP 5224430B2
Authority
JP
Japan
Prior art keywords
layer
power semiconductor
solder material
semiconductor element
semiconductor module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006250622A
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English (en)
Japanese (ja)
Other versions
JP2007281412A5 (enExample
JP2007281412A (ja
Inventor
靖 山田
雄二 八木
祐司 西部
尚史 高尾
清仁 石田
郁雄 大沼
佳和 高久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Toyota Central R&D Labs Inc
Original Assignee
Tohoku University NUC
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Toyota Central R&D Labs Inc filed Critical Tohoku University NUC
Priority to JP2006250622A priority Critical patent/JP5224430B2/ja
Publication of JP2007281412A publication Critical patent/JP2007281412A/ja
Publication of JP2007281412A5 publication Critical patent/JP2007281412A5/ja
Application granted granted Critical
Publication of JP5224430B2 publication Critical patent/JP5224430B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29113—Bismuth [Bi] as principal constituent

Landscapes

  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2006250622A 2006-03-17 2006-09-15 パワー半導体モジュール Expired - Fee Related JP5224430B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006250622A JP5224430B2 (ja) 2006-03-17 2006-09-15 パワー半導体モジュール

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006075488 2006-03-17
JP2006075488 2006-03-17
JP2006250622A JP5224430B2 (ja) 2006-03-17 2006-09-15 パワー半導体モジュール

Publications (3)

Publication Number Publication Date
JP2007281412A JP2007281412A (ja) 2007-10-25
JP2007281412A5 JP2007281412A5 (enExample) 2009-10-15
JP5224430B2 true JP5224430B2 (ja) 2013-07-03

Family

ID=38682519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006250622A Expired - Fee Related JP5224430B2 (ja) 2006-03-17 2006-09-15 パワー半導体モジュール

Country Status (1)

Country Link
JP (1) JP5224430B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4822526B2 (ja) * 2006-09-15 2011-11-24 株式会社豊田中央研究所 接合体
JP4964009B2 (ja) * 2007-04-17 2012-06-27 株式会社豊田中央研究所 パワー半導体モジュール
JP2009099655A (ja) * 2007-10-15 2009-05-07 National Institute Of Advanced Industrial & Technology ワイドギャップ半導体チップの鉛フリー半田付け方法
JP2009129983A (ja) * 2007-11-20 2009-06-11 Toyota Central R&D Labs Inc 接合体及びその製造方法、並びにパワー半導体モジュール及びその製造方法
JP5160201B2 (ja) * 2007-11-20 2013-03-13 株式会社豊田中央研究所 はんだ材料及びその製造方法、接合体及びその製造方法、並びにパワー半導体モジュール及びその製造方法
US20100294550A1 (en) * 2007-12-27 2010-11-25 Akio Furusawa Bonding material, electronic component and bonded structure
JP2009158725A (ja) * 2007-12-27 2009-07-16 Panasonic Corp 半導体装置およびダイボンド材
WO2009157130A1 (ja) * 2008-06-23 2009-12-30 パナソニック株式会社 接合構造および電子部品
JP5116615B2 (ja) * 2008-09-02 2013-01-09 新電元工業株式会社 位置決め治具ユニット、及び、半田付け方法
JP5203906B2 (ja) * 2008-12-03 2013-06-05 株式会社豊田中央研究所 Ｂｉ含有はんだ箔の製造方法、Ｂｉ含有はんだ箔、接合体、及びパワー半導体モジュール
WO2010122795A1 (ja) * 2009-04-22 2010-10-28 パナソニック株式会社 半導体装置
US20110042817A1 (en) * 2009-04-30 2011-02-24 Panasonic Corporation Solder joint structure, and joining method of the same
CN102132390B (zh) * 2009-06-22 2013-03-20 松下电器产业株式会社 接合结构体、接合材料及接合材料的制造方法
JP2011009331A (ja) * 2009-06-24 2011-01-13 Panasonic Corp 層を有した半導体素子およびその半導体素子を用いた接合構造体
WO2011049128A1 (ja) * 2009-10-20 2011-04-28 ローム株式会社 半導体装置および半導体装置の製造方法
JP5482214B2 (ja) * 2010-01-19 2014-05-07 パナソニック株式会社 接合構造体の製造方法及び接合構造体
JP2011235314A (ja) * 2010-05-11 2011-11-24 Sumitomo Metal Mining Co Ltd Ｚｎを主成分とするＰｂフリーはんだ合金
US9211614B2 (en) 2010-06-16 2015-12-15 Sumitomo Metal Mining Co., Ltd. Bi—Al—Zn—based Pb-free solder alloy
JP4807465B1 (ja) 2010-06-28 2011-11-02 住友金属鉱山株式会社 Ｐｂフリーはんだ合金
JP5093373B2 (ja) 2011-03-08 2012-12-12 住友金属鉱山株式会社 Ｐｂフリーはんだペースト
JP5723225B2 (ja) * 2011-06-03 2015-05-27 パナソニック株式会社 接合構造体
JP2013052433A (ja) * 2011-09-06 2013-03-21 Sumitomo Metal Mining Co Ltd ＰｂフリーＺｎ系はんだ合金
US10189119B2 (en) * 2013-01-28 2019-01-29 Nihon Handa Co., Ltd. Solder alloy for die bonding
WO2015029511A1 (ja) * 2013-08-28 2015-03-05 三菱電機株式会社 半導体装置およびその製造方法
JP6529632B1 (ja) * 2018-04-27 2019-06-12 ニホンハンダ株式会社 はんだ合金、ソルダペースト、成形はんだ、及びはんだ合金を用いた半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1266975A1 (de) * 2001-06-12 2002-12-18 ESEC Trading SA Bleifreies Lötmittel
JP2004349331A (ja) * 2003-05-20 2004-12-09 Renesas Technology Corp パワーｍｏｓｆｅｔとパワーｍｏｓｆｅｔ応用装置およびパワーｍｏｓｆｅｔの製造方法
JP2006140401A (ja) * 2004-11-15 2006-06-01 Toshiba Corp 半導体集積回路装置
JP4207896B2 (ja) * 2005-01-19 2009-01-14 富士電機デバイステクノロジー株式会社 半導体装置

Also Published As

Publication number Publication date
JP2007281412A (ja) 2007-10-25

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