JP5217239B2 - 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 - Google Patents

露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 Download PDF

Info

Publication number
JP5217239B2
JP5217239B2 JP2007132800A JP2007132800A JP5217239B2 JP 5217239 B2 JP5217239 B2 JP 5217239B2 JP 2007132800 A JP2007132800 A JP 2007132800A JP 2007132800 A JP2007132800 A JP 2007132800A JP 5217239 B2 JP5217239 B2 JP 5217239B2
Authority
JP
Japan
Prior art keywords
liquid
substrate
exposure
cleaning
during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007132800A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008283156A (ja
Inventor
勝志 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2007132800A priority Critical patent/JP5217239B2/ja
Publication of JP2008283156A publication Critical patent/JP2008283156A/ja
Application granted granted Critical
Publication of JP5217239B2 publication Critical patent/JP5217239B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007132800A 2006-05-18 2007-05-18 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 Expired - Fee Related JP5217239B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007132800A JP5217239B2 (ja) 2006-05-18 2007-05-18 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2006139614 2006-05-18
JP2006139614 2006-05-18
JP2006140957 2006-05-19
JP2006140957 2006-05-19
JP2007103343 2007-04-10
JP2007103343 2007-04-10
JP2007132800A JP5217239B2 (ja) 2006-05-18 2007-05-18 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012080199A Division JP2012164992A (ja) 2006-05-18 2012-03-30 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2008283156A JP2008283156A (ja) 2008-11-20
JP5217239B2 true JP5217239B2 (ja) 2013-06-19

Family

ID=38723302

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007132800A Expired - Fee Related JP5217239B2 (ja) 2006-05-18 2007-05-18 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法
JP2012080199A Pending JP2012164992A (ja) 2006-05-18 2012-03-30 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012080199A Pending JP2012164992A (ja) 2006-05-18 2012-03-30 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法

Country Status (8)

Country Link
US (2) US8514366B2 (OSRAM)
EP (1) EP2037486A4 (OSRAM)
JP (2) JP5217239B2 (OSRAM)
KR (1) KR20090018024A (OSRAM)
CN (2) CN101410948B (OSRAM)
SG (1) SG175671A1 (OSRAM)
TW (1) TW200805000A (OSRAM)
WO (1) WO2007135990A1 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11667125B2 (en) 2018-07-13 2023-06-06 Hewlett-Packard Development Company, L.P. Print liquid supply
US11981143B2 (en) 2018-07-13 2024-05-14 Hewlett-Packard Development Company, L.P. Print liquid supply

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
JP5194799B2 (ja) * 2005-12-06 2013-05-08 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
KR20090033170A (ko) * 2006-06-30 2009-04-01 가부시키가이샤 니콘 메인터넌스 방법, 노광 방법 및 장치 및 디바이스 제조 방법
US7841352B2 (en) 2007-05-04 2010-11-30 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7916269B2 (en) 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
US9019466B2 (en) 2007-07-24 2015-04-28 Asml Netherlands B.V. Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system
SG151198A1 (en) 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
NL1035942A1 (nl) 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
NL1036273A1 (nl) 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
NL1036306A1 (nl) 2007-12-20 2009-06-23 Asml Netherlands Bv Lithographic apparatus and in-line cleaning apparatus.
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009182110A (ja) * 2008-01-30 2009-08-13 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
JP2009295933A (ja) * 2008-06-09 2009-12-17 Canon Inc ダミー露光基板及びその製造方法、液浸露光装置、並びに、デバイス製造方法
JP2010103363A (ja) * 2008-10-24 2010-05-06 Nec Electronics Corp 液浸露光装置の洗浄方法、ダミーウェハ、及び液浸露光装置
TW201017347A (en) * 2008-10-31 2010-05-01 Nikon Corp Exposure device, exposure method, and device manufacturing method
NL2004540A (en) * 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
JP2010278299A (ja) * 2009-05-29 2010-12-09 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
NL2005167A (en) * 2009-10-02 2011-04-05 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
NL2005610A (en) 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and surface cleaning method.
KR101591138B1 (ko) * 2009-12-18 2016-02-02 가부시키가이샤 니콘 기판 처리 장치의 메인터넌스 방법 및 안전 장치
JPWO2012011512A1 (ja) * 2010-07-20 2013-09-09 株式会社ニコン 露光方法、露光装置および洗浄方法
US20120057139A1 (en) * 2010-08-04 2012-03-08 Nikon Corporation Cleaning method, device manufacturing method, cleaning substrate, liquid immersion member, liquid immersion exposure apparatus, and dummy substrate
US20120188521A1 (en) * 2010-12-27 2012-07-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium
NL2008183A (en) * 2011-02-25 2012-08-28 Asml Netherlands Bv A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method.
US20130057837A1 (en) * 2011-04-06 2013-03-07 Nikon Corporation Exposure apparatus, exposure method, device-manufacturing method, program, and recording medium
TWI503553B (zh) * 2011-10-19 2015-10-11 Johnstech Int Corp 用於微電路測試器的導電開爾文接觸件
KR102071873B1 (ko) * 2012-12-27 2020-02-03 삼성디스플레이 주식회사 용매 제거장치 및 이를 포함하는 포토리소그래피 장치
KR101573450B1 (ko) * 2014-07-17 2015-12-11 주식회사 아이에스시 테스트용 소켓
NL2015049A (en) 2014-08-07 2016-07-08 Asml Netherlands Bv A lithography apparatus, a method of manufacturing a device and a control program.
CN112965341B (zh) * 2015-11-20 2024-06-28 Asml荷兰有限公司 光刻设备和操作光刻设备的方法
CN118963073A (zh) * 2018-11-09 2024-11-15 Asml控股股份有限公司 用于清洁光刻设备内的支撑件的设备和方法

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
JP3200874B2 (ja) 1991-07-10 2001-08-20 株式会社ニコン 投影露光装置
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5559582A (en) * 1992-08-28 1996-09-24 Nikon Corporation Exposure apparatus
JPH08313842A (ja) 1995-05-15 1996-11-29 Nikon Corp 照明光学系および該光学系を備えた露光装置
WO1998024115A1 (en) 1996-11-28 1998-06-04 Nikon Corporation Aligner and method for exposure
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
EP1197801B1 (en) 1996-12-24 2005-12-28 ASML Netherlands B.V. Lithographic device with two object holders
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JPH1123692A (ja) 1997-06-30 1999-01-29 Sekisui Chem Co Ltd 地中探査用アンテナ
JPH1128790A (ja) 1997-07-09 1999-02-02 Asahi Chem Ind Co Ltd 紫外線遮蔽用熱可塑性樹脂板
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
US6020964A (en) 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
JP4264676B2 (ja) 1998-11-30 2009-05-20 株式会社ニコン 露光装置及び露光方法
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
KR100841147B1 (ko) 1998-03-11 2008-06-24 가부시키가이샤 니콘 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP4505989B2 (ja) 1998-05-19 2010-07-21 株式会社ニコン 収差測定装置並びに測定方法及び該装置を備える投影露光装置並びに該方法を用いるデバイス製造方法、露光方法
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US6611316B2 (en) 2001-02-27 2003-08-26 Asml Holding N.V. Method and system for dual reticle image exposure
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
EP1437408A4 (en) 2001-09-17 2006-08-23 Takeshi Imanishi NOVEL ANTISENSE OLIGONUCLEOTIDE DERIVATIVES AGAINST HEPATITIS C VIRUS
AU2002351933A1 (en) 2001-11-08 2003-05-19 Develogen Aktiengesellschaft Fur Entwicklungsbiologische Forschung Men protein, gst2, rab-rp1, csp, f-box protein lilina/fbl7, abc50, coronin, sec61 alpha, or vhappa1-1, or homologous proteins involved in the regulation of energy homeostasis
JP4214729B2 (ja) 2002-07-25 2009-01-28 コニカミノルタホールディングス株式会社 硬化性白インク組成物
WO2004019128A2 (en) 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US6893629B2 (en) 2002-10-30 2005-05-17 Isp Investments Inc. Delivery system for a tooth whitener
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2495613B1 (en) 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithographic apparatus
EP1571698A4 (en) * 2002-12-10 2006-06-21 Nikon Corp EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
EP1573730B1 (en) 2002-12-13 2009-02-25 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US7399978B2 (en) 2002-12-19 2008-07-15 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
EP1579435B1 (en) 2002-12-19 2007-06-27 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
KR101381538B1 (ko) 2003-02-26 2014-04-04 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2004304135A (ja) 2003-04-01 2004-10-28 Nikon Corp 露光装置、露光方法及びマイクロデバイスの製造方法
SG189557A1 (en) 2003-04-11 2013-05-31 Nikon Corp Cleanup method for optics in immersion lithography
TWI503865B (zh) * 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
JP2005277363A (ja) * 2003-05-23 2005-10-06 Nikon Corp 露光装置及びデバイス製造方法
US7684008B2 (en) * 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW200511388A (en) * 2003-06-13 2005-03-16 Nikon Corp Exposure method, substrate stage, exposure apparatus and method for manufacturing device
US7370659B2 (en) * 2003-08-06 2008-05-13 Micron Technology, Inc. Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
JP4305095B2 (ja) * 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
WO2005036623A1 (ja) * 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
US20050122218A1 (en) 2003-12-06 2005-06-09 Goggin Christopher M. Ranging and warning device using emitted and reflected wave energy
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005076323A1 (ja) * 2004-02-10 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法
US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1768169B9 (en) * 2004-06-04 2013-03-06 Nikon Corporation Exposure apparatus, exposure method, and device producing method
KR101433496B1 (ko) 2004-06-09 2014-08-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2005124833A1 (ja) * 2004-06-21 2005-12-29 Nikon Corporation 露光装置及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
JP2006013806A (ja) 2004-06-24 2006-01-12 Maspro Denkoh Corp 信号処理装置及びcatv用ヘッドエンド装置
US7463330B2 (en) * 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
EP3267257B1 (en) 2004-08-03 2019-02-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4534651B2 (ja) * 2004-08-03 2010-09-01 株式会社ニコン 露光装置、デバイス製造方法及び液体回収方法
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
JP4656448B2 (ja) 2004-09-30 2011-03-23 株式会社ニコン 投影光学装置及び露光装置
JP4665712B2 (ja) * 2004-10-26 2011-04-06 株式会社ニコン 基板処理方法、露光装置及びデバイス製造方法
KR101318037B1 (ko) * 2004-11-01 2013-10-14 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7362412B2 (en) * 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
US7732123B2 (en) * 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
JP4784513B2 (ja) * 2004-12-06 2011-10-05 株式会社ニコン メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
JP4752473B2 (ja) * 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
WO2006122578A1 (en) 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Contaminant removal apparatus and method therefor
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11667125B2 (en) 2018-07-13 2023-06-06 Hewlett-Packard Development Company, L.P. Print liquid supply
US11981143B2 (en) 2018-07-13 2024-05-14 Hewlett-Packard Development Company, L.P. Print liquid supply

Also Published As

Publication number Publication date
KR20090018024A (ko) 2009-02-19
JP2008283156A (ja) 2008-11-20
SG175671A1 (en) 2011-11-28
US8514366B2 (en) 2013-08-20
WO2007135990A1 (ja) 2007-11-29
US20090066922A1 (en) 2009-03-12
TW200805000A (en) 2008-01-16
EP2037486A1 (en) 2009-03-18
CN102298274A (zh) 2011-12-28
CN101410948B (zh) 2011-10-26
JP2012164992A (ja) 2012-08-30
CN101410948A (zh) 2009-04-15
EP2037486A4 (en) 2012-01-11
US20130301019A1 (en) 2013-11-14

Similar Documents

Publication Publication Date Title
JP5217239B2 (ja) 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法
JP5019170B2 (ja) メンテナンス方法、露光方法及び装置、並びにデバイス製造方法
JP5245825B2 (ja) メンテナンス方法、露光方法及び装置、並びにデバイス製造方法
EP1670039B1 (en) Exposure apparatus and device producing method
KR101169288B1 (ko) 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101618493B1 (ko) 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2018049295A (ja) 露光装置及びデバイス製造方法
WO2007066758A1 (ja) 基板保持装置、露光装置、露光方法、及びデバイス製造方法
JPWO2011046174A1 (ja) 露光装置、露光方法、メンテナンス方法、及びデバイス製造方法
JP2011029326A (ja) 露光装置、メンテナンス方法、及びデバイス製造方法
HK1128826A (en) Exposure method and apparatus, maintenance method and device manufacturing method
JP2013045924A (ja) 露光装置、クリーニング方法、デバイス製造方法、プログラム、及び記録媒体
JP2011018743A (ja) 露光装置、クリーニング方法、及びデバイス製造方法
HK1124458A (en) Maintenance method, exposure method and apparatus and device manufacturing method
HK1129494A (en) Maintenance method, exposure method and apparatus, and device manufacturing method
JP2011108735A (ja) 洗浄部材、露光装置、洗浄方法、及びデバイス製造方法
JP2011071253A (ja) 露光装置、クリーニング方法、及びデバイス製造方法
JP2007311671A (ja) 露光方法及び装置、並びにデバイス製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100325

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110301

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120313

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120508

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130205

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130218

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160315

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5217239

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees