JP5209022B2 - 堆積システムにおける堆積物の形成を制御するための方法および装置、ならびにそれらを含む堆積システムおよび方法 - Google Patents
堆積システムにおける堆積物の形成を制御するための方法および装置、ならびにそれらを含む堆積システムおよび方法 Download PDFInfo
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/488—Protection of windows for introduction of radiation into the coating chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Description
本発明は、海軍研究事務所により与えられた海軍研究事務所契約番号N00014−02−C−0302に基づいて、政府支援で行われた。政府は、本発明において一定の権利を有する。
L=サセプタの長さ
M=質量流量
ρ=圧力、温度およびガス組成によって決定されるサセプタ内部におけるガスの平均密度
A=サセプタ開口部の断面積
Claims (6)
- それぞれが流れ方向に流れるプロセスガスおよびバッファガスを使用する、基板上に膜を堆積させるための堆積システムであって、
a) 少なくとも1つのサセプタ部材を含むサセプタアセンブリであって、該少なくとも1つのサセプタ部材は:
基板を収容するのに適合し、およびバッファガスを収容するためのバッファガス領域を有する反応室であって、流れ方向に垂直な第1の断面積を有する反応室と;
流れ方向に垂直な第2の断面積を有するプロセスガス注入口であって、第2の断面積は第1の断面積よりも小さいプロセスガス注入口と;
プロセスガス注入口と隣接し、および反応室のバッファガス領域の中へバッファガスを方向づけるのに適合するバッファガス注入口と
を画定するサセプタアセンブリと、
b) 前記少なくとも1つのサセプタ部材中に渦電流を発生させ、該渦電流に応答して前記少なくとも1つのサセプタ部材が熱を発生させることにより前記反応室を誘導的に加熱するように機能する電磁周波数(EMF)発生器と
を含むことを特徴とする堆積システム。 - バッファガス領域が、流れ方向に垂直な第3の断面積を有し;および、
第3の断面積と第2の断面積とが、第1の断面積と実質的に同一である総断面積を有する
ことを特徴とする請求項1に記載の堆積システム。 - 少なくとも1つのサセプタ部材が段状部を含み、およびバッファガス注入口が段状部に形成されることを特徴とする請求項1に記載の堆積システム。
- 反応室が、前記流れ方向に沿って伸びる長さを有し、および実質的に反応室の長さの全体に沿って、反応室の断面積が実質的に均一なことを特徴とする請求項1に記載の堆積システム。
- 反応室が、前記流れ方向に沿って伸びる長さを有し、および反応室の長さに沿って、反応室の断面積が不均一であることを特徴とする請求項1に記載の堆積システム。
- 前記流れ方向が実質的に水平であり、前記反応室の高さが不均一であり前記反応室の長さに沿って減少することを特徴とする請求項5に記載の堆積システム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/414,787 US7118781B1 (en) | 2003-04-16 | 2003-04-16 | Methods for controlling formation of deposits in a deposition system and deposition methods including the same |
US10/414,787 | 2003-04-16 |
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JP2006508772A Division JP4679510B2 (ja) | 2003-04-16 | 2004-02-19 | 堆積システムにおける堆積物の形成を制御するための方法および装置、ならびにそれらを含む堆積システムおよび方法 |
Publications (2)
Publication Number | Publication Date |
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JP2011021278A JP2011021278A (ja) | 2011-02-03 |
JP5209022B2 true JP5209022B2 (ja) | 2013-06-12 |
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JP2006508772A Expired - Lifetime JP4679510B2 (ja) | 2003-04-16 | 2004-02-19 | 堆積システムにおける堆積物の形成を制御するための方法および装置、ならびにそれらを含む堆積システムおよび方法 |
JP2010236269A Expired - Lifetime JP5209022B2 (ja) | 2003-04-16 | 2010-10-21 | 堆積システムにおける堆積物の形成を制御するための方法および装置、ならびにそれらを含む堆積システムおよび方法 |
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JP2006508772A Expired - Lifetime JP4679510B2 (ja) | 2003-04-16 | 2004-02-19 | 堆積システムにおける堆積物の形成を制御するための方法および装置、ならびにそれらを含む堆積システムおよび方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7118781B1 (ja) |
EP (2) | EP2253734B1 (ja) |
JP (2) | JP4679510B2 (ja) |
AT (1) | ATE486977T1 (ja) |
DE (1) | DE602004029877D1 (ja) |
TW (1) | TW200427861A (ja) |
WO (1) | WO2005028701A2 (ja) |
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TW200427861A (en) | 2004-12-16 |
EP1613791A2 (en) | 2006-01-11 |
JP4679510B2 (ja) | 2011-04-27 |
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JP2011021278A (ja) | 2011-02-03 |
ATE486977T1 (de) | 2010-11-15 |
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US7118781B1 (en) | 2006-10-10 |
EP1613791B1 (en) | 2010-11-03 |
US20070101939A1 (en) | 2007-05-10 |
EP2253734B1 (en) | 2015-04-22 |
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