ATE486977T1 - Verfahren und system zur bekämpfung von ablagerungen - Google Patents
Verfahren und system zur bekämpfung von ablagerungenInfo
- Publication number
- ATE486977T1 ATE486977T1 AT04809290T AT04809290T ATE486977T1 AT E486977 T1 ATE486977 T1 AT E486977T1 AT 04809290 T AT04809290 T AT 04809290T AT 04809290 T AT04809290 T AT 04809290T AT E486977 T1 ATE486977 T1 AT E486977T1
- Authority
- AT
- Austria
- Prior art keywords
- reaction chamber
- gas
- flowing
- substrate
- process gas
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/488—Protection of windows for introduction of radiation into the coating chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/414,787 US7118781B1 (en) | 2003-04-16 | 2003-04-16 | Methods for controlling formation of deposits in a deposition system and deposition methods including the same |
PCT/US2004/004943 WO2005028701A2 (en) | 2003-04-16 | 2004-02-19 | Methods and apparatus for controlling formation of deposits in a deposition system and deposition systems and methods including the same |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE486977T1 true ATE486977T1 (de) | 2010-11-15 |
Family
ID=34375145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04809290T ATE486977T1 (de) | 2003-04-16 | 2004-02-19 | Verfahren und system zur bekämpfung von ablagerungen |
Country Status (7)
Country | Link |
---|---|
US (2) | US7118781B1 (de) |
EP (2) | EP1613791B1 (de) |
JP (2) | JP4679510B2 (de) |
AT (1) | ATE486977T1 (de) |
DE (1) | DE602004029877D1 (de) |
TW (1) | TW200427861A (de) |
WO (1) | WO2005028701A2 (de) |
Families Citing this family (123)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7052546B1 (en) * | 2003-08-28 | 2006-05-30 | Cape Simulations, Inc. | High-purity crystal growth |
US7727588B2 (en) * | 2003-09-05 | 2010-06-01 | Yield Engineering Systems, Inc. | Apparatus for the efficient coating of substrates |
TWI344469B (en) | 2005-04-07 | 2011-07-01 | Nippon Catalytic Chem Ind | Polyacrylic acid (salt) water-absorbent resin, production process thereof, and acrylic acid used in polymerization for production of water-absorbent resin |
US8052794B2 (en) * | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
EP2816087B1 (de) | 2005-12-13 | 2016-11-09 | Asahi Kasei Kabushiki Kaisha | Wässrige organisch-anorganische hybride Zusammensetzung |
JP4534978B2 (ja) * | 2005-12-21 | 2010-09-01 | トヨタ自動車株式会社 | 半導体薄膜製造装置 |
TWI394789B (zh) | 2005-12-22 | 2013-05-01 | Nippon Catalytic Chem Ind | 吸水性樹脂組成物及其製造方法、吸收性物品 |
EP1992008A1 (de) * | 2006-02-28 | 2008-11-19 | Sez Ag | Einrichtung und verfahren zur flüssigkeitsbehandlung von scheibenartigen artikeln |
EP1837348B9 (de) | 2006-03-24 | 2020-01-08 | Nippon Shokubai Co.,Ltd. | Wasserabsorbierendes Harz und Verfahren zu seiner Herstellung |
US9416464B1 (en) * | 2006-10-11 | 2016-08-16 | Ostendo Technologies, Inc. | Apparatus and methods for controlling gas flows in a HVPE reactor |
US7976634B2 (en) * | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
JP5202839B2 (ja) * | 2006-12-25 | 2013-06-05 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
JP5051875B2 (ja) * | 2006-12-25 | 2012-10-17 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
JP2011501409A (ja) * | 2007-10-10 | 2011-01-06 | イザ,マイケル | 化学蒸着反応チャンバ |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
US8259769B1 (en) | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
US8143148B1 (en) | 2008-07-14 | 2012-03-27 | Soraa, Inc. | Self-aligned multi-dielectric-layer lift off process for laser diode stripes |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
EP2319086A4 (de) | 2008-08-04 | 2014-08-27 | Soraa Inc | Weisslichtvorrichtungen mit nicht-polarem oder semipolarem galliumhaltigem material und leuchtstoffen |
US9328417B2 (en) * | 2008-11-01 | 2016-05-03 | Ultratech, Inc. | System and method for thin film deposition |
US8422525B1 (en) | 2009-03-28 | 2013-04-16 | Soraa, Inc. | Optical device structure using miscut GaN substrates for laser applications |
US8486191B2 (en) * | 2009-04-07 | 2013-07-16 | Asm America, Inc. | Substrate reactor with adjustable injectors for mixing gases within reaction chamber |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
DE112010001615T5 (de) | 2009-04-13 | 2012-08-02 | Soraa, Inc. | Stuktur eines optischen Elements unter Verwendung von GaN-Substraten für Laseranwendungen |
US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
US8294179B1 (en) | 2009-04-17 | 2012-10-23 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8254425B1 (en) | 2009-04-17 | 2012-08-28 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8242522B1 (en) | 2009-05-12 | 2012-08-14 | Soraa, Inc. | Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm |
US8416825B1 (en) | 2009-04-17 | 2013-04-09 | Soraa, Inc. | Optical device structure using GaN substrates and growth structure for laser applications |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
CN101924023A (zh) * | 2009-06-09 | 2010-12-22 | 日本派欧尼株式会社 | Iii族氮化物半导体的气相生长装置 |
US8314429B1 (en) | 2009-09-14 | 2012-11-20 | Soraa, Inc. | Multi color active regions for white light emitting diode |
US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
DE112010003700T5 (de) | 2009-09-18 | 2013-02-28 | Soraa, Inc. | Power-leuchtdiode und verfahren mit stromdichtebetrieb |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
CN102548654A (zh) | 2009-09-29 | 2012-07-04 | 株式会社日本触媒 | 颗粒状吸水剂及其制造方法 |
EP2501838B1 (de) | 2009-11-18 | 2017-01-25 | REC Silicon Inc. | Fliessbettreaktor |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9927611B2 (en) | 2010-03-29 | 2018-03-27 | Soraa Laser Diode, Inc. | Wearable laser based display method and system |
WO2011121507A1 (en) * | 2010-03-29 | 2011-10-06 | Koolerheadz | Gas injection device with uniform gas velocity |
US20110247556A1 (en) * | 2010-03-31 | 2011-10-13 | Soraa, Inc. | Tapered Horizontal Growth Chamber |
US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
KR20130051013A (ko) | 2010-06-09 | 2013-05-16 | 솔렉셀, 인크. | 고생산성 박막 증착 방법 및 시스템 |
US8486192B2 (en) | 2010-09-30 | 2013-07-16 | Soitec | Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods |
US8133806B1 (en) | 2010-09-30 | 2012-03-13 | S.O.I.Tec Silicon On Insulator Technologies | Systems and methods for forming semiconductor materials by atomic layer deposition |
US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
US8975615B2 (en) | 2010-11-09 | 2015-03-10 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material |
US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
TW201239129A (en) * | 2010-12-20 | 2012-10-01 | Samsung Led Co Ltd | Chemical vapor deposition apparatus and method of manufacturing LED using the same |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9318875B1 (en) | 2011-01-24 | 2016-04-19 | Soraa Laser Diode, Inc. | Color converting element for laser diode |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US9093820B1 (en) | 2011-01-25 | 2015-07-28 | Soraa Laser Diode, Inc. | Method and structure for laser devices using optical blocking regions |
US9236530B2 (en) | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
US9287684B2 (en) | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
US9512520B2 (en) * | 2011-04-25 | 2016-12-06 | Applied Materials, Inc. | Semiconductor substrate processing system |
US9499905B2 (en) * | 2011-07-22 | 2016-11-22 | Applied Materials, Inc. | Methods and apparatus for the deposition of materials on a substrate |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
US20130078375A1 (en) * | 2011-09-26 | 2013-03-28 | Peter Krotov | Deposition source integration into coater |
US8971370B1 (en) | 2011-10-13 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices using a semipolar plane |
KR101829800B1 (ko) * | 2011-12-26 | 2018-03-29 | 엘지이노텍 주식회사 | 증착 장치 및 증착 방법 |
US9020003B1 (en) | 2012-03-14 | 2015-04-28 | Soraa Laser Diode, Inc. | Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates |
US9343871B1 (en) | 2012-04-05 | 2016-05-17 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9800016B1 (en) | 2012-04-05 | 2017-10-24 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US10559939B1 (en) | 2012-04-05 | 2020-02-11 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9088135B1 (en) | 2012-06-29 | 2015-07-21 | Soraa Laser Diode, Inc. | Narrow sized laser diode |
US9184563B1 (en) | 2012-08-30 | 2015-11-10 | Soraa Laser Diode, Inc. | Laser diodes with an etched facet and surface treatment |
JP5343162B1 (ja) * | 2012-10-26 | 2013-11-13 | エピクルー株式会社 | エピタキシャル成長装置 |
JP5971110B2 (ja) * | 2012-12-20 | 2016-08-17 | 住友電気工業株式会社 | 炭化珪素基板の製造方法および製造装置 |
JP6026333B2 (ja) * | 2013-03-25 | 2016-11-16 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
JP6065762B2 (ja) | 2013-06-21 | 2017-01-25 | 株式会社デンソー | 炭化珪素半導体成膜装置およびそれを用いた成膜方法 |
US9166372B1 (en) | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
US9379525B2 (en) | 2014-02-10 | 2016-06-28 | Soraa Laser Diode, Inc. | Manufacturable laser diode |
US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
US9520695B2 (en) | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
US9209596B1 (en) | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
JP6320831B2 (ja) * | 2014-04-16 | 2018-05-09 | 株式会社ニューフレアテクノロジー | サセプタ処理方法及びサセプタ処理用プレート |
US9564736B1 (en) | 2014-06-26 | 2017-02-07 | Soraa Laser Diode, Inc. | Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode |
JP6424384B2 (ja) * | 2014-08-01 | 2018-11-21 | 昭和電工株式会社 | 化学気相成長方法 |
US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
US9653642B1 (en) | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
US9666677B1 (en) | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
JP6054470B2 (ja) | 2015-05-26 | 2016-12-27 | 株式会社日本製鋼所 | 原子層成長装置 |
JP6050860B1 (ja) * | 2015-05-26 | 2016-12-21 | 株式会社日本製鋼所 | プラズマ原子層成長装置 |
JP6054471B2 (ja) | 2015-05-26 | 2016-12-27 | 株式会社日本製鋼所 | 原子層成長装置および原子層成長装置排気部 |
US10879673B2 (en) | 2015-08-19 | 2020-12-29 | Soraa Laser Diode, Inc. | Integrated white light source using a laser diode and a phosphor in a surface mount device package |
US10938182B2 (en) | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
US11437775B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | Integrated light source using a laser diode |
US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
WO2018185850A1 (ja) * | 2017-04-04 | 2018-10-11 | 三菱電機株式会社 | 炭化珪素エピタキシャルウエハの製造方法及び炭化珪素半導体装置の製造方法 |
DE112017007406T8 (de) * | 2017-04-06 | 2020-02-13 | Mitsubishi Electric Corporation | SiC-Epitaxiewafer, Verfahren zum Herstellen eines SiC-Epitaxiewafers, SiC-Vorrichtung und Leistungsumwandlungsgerät |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
JP7115084B2 (ja) * | 2018-07-10 | 2022-08-09 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法 |
JP7242979B2 (ja) * | 2018-12-17 | 2023-03-22 | 株式会社レゾナック | SiCエピタキシャル成長装置 |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
US11228158B2 (en) | 2019-05-14 | 2022-01-18 | Kyocera Sld Laser, Inc. | Manufacturable laser diodes on a large area gallium and nitrogen containing substrate |
US10903623B2 (en) | 2019-05-14 | 2021-01-26 | Soraa Laser Diode, Inc. | Method and structure for manufacturable large area gallium and nitrogen containing substrate |
CN114026263A (zh) | 2019-05-27 | 2022-02-08 | 顺克·齐卡博技术有限公司 | 化学气相沉积室制品 |
US11032945B2 (en) * | 2019-07-12 | 2021-06-08 | Applied Materials, Inc. | Heat shield assembly for an epitaxy chamber |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1749201A (en) | 1928-05-28 | 1930-03-04 | Paul W Prutzman | Mercury-bromin derivative of fluorescein |
US2759855A (en) * | 1953-08-24 | 1956-08-21 | Eagle Picher Co | Coated electronic device and method of making same |
JPS5176968A (ja) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | Kisoseichoho |
JPS607378B2 (ja) | 1977-04-13 | 1985-02-23 | 株式会社日立製作所 | Cvd装置 |
JPS59209643A (ja) * | 1983-05-12 | 1984-11-28 | Ricoh Co Ltd | 光化学気相成長装置 |
FR2591616A1 (fr) | 1985-12-17 | 1987-06-19 | Labo Electronique Physique | Chambre de reacteur pour croissance epitaxiale en phase vapeur des materiaux semiconducteurs. |
FR2599558B1 (fr) | 1986-05-27 | 1988-09-02 | Labo Electronique Physique | Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat |
US4756927A (en) * | 1986-05-29 | 1988-07-12 | Massachusetts Institute Of Technology | Method and apparatus for refractory metal deposition |
DE3772659D1 (de) | 1986-06-28 | 1991-10-10 | Ulvac Corp | Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik. |
US4800105A (en) | 1986-07-22 | 1989-01-24 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of forming a thin film by chemical vapor deposition |
EP0255454A3 (de) | 1986-07-26 | 1991-11-21 | Nihon Shinku Gijutsu Kabushiki Kaisha | Anordnung für chemischen Dampfniederschlag |
US4778693A (en) * | 1986-10-17 | 1988-10-18 | Quantronix Corporation | Photolithographic mask repair system |
FR2628985B1 (fr) | 1988-03-22 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a paroi protegee contre les depots |
JPH02222134A (ja) * | 1989-02-23 | 1990-09-04 | Nobuo Mikoshiba | 薄膜形成装置 |
US5005519A (en) * | 1990-03-14 | 1991-04-09 | Fusion Systems Corporation | Reaction chamber having non-clouded window |
US5085727A (en) * | 1990-05-21 | 1992-02-04 | Applied Materials, Inc. | Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion |
US5334277A (en) | 1990-10-25 | 1994-08-02 | Nichia Kagaky Kogyo K.K. | Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same |
US5433169A (en) | 1990-10-25 | 1995-07-18 | Nichia Chemical Industries, Ltd. | Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer |
JPH04348031A (ja) * | 1990-12-28 | 1992-12-03 | Mitsubishi Electric Corp | 化学気相成長装置 |
JPH06338466A (ja) * | 1993-05-31 | 1994-12-06 | Sony Corp | 気相成長装置 |
US5449535A (en) * | 1994-06-13 | 1995-09-12 | Competitive Technologies, Inc. | Light controlled vapor deposition |
SE9500326D0 (sv) | 1995-01-31 | 1995-01-31 | Abb Research Ltd | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD |
US5620524A (en) * | 1995-02-27 | 1997-04-15 | Fan; Chiko | Apparatus for fluid delivery in chemical vapor deposition systems |
SE9502288D0 (sv) | 1995-06-26 | 1995-06-26 | Abb Research Ltd | A device and a method for epitaxially growing objects by CVD |
US6030661A (en) | 1995-08-04 | 2000-02-29 | Abb Research Ltd. | Device and a method for epitaxially growing objects by CVD |
JPH0966801A (ja) * | 1995-08-31 | 1997-03-11 | Tokai Rika Co Ltd | ギヤ機構およびプリテンショナ |
SE9503428D0 (sv) | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A method for epitaxially growing objects and a device for such a growth |
SE9503426D0 (sv) | 1995-10-04 | 1995-10-04 | Abb Research Ltd | A device for heat treatment of objects and a method for producing a susceptor |
DE19603323A1 (de) * | 1996-01-30 | 1997-08-07 | Siemens Ag | Verfahren und Vorrichtung zum Herstellen von SiC durch CVD mit verbesserter Gasausnutzung |
SE9600705D0 (sv) | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
SE9600704D0 (sv) | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
US6039812A (en) | 1996-10-21 | 2000-03-21 | Abb Research Ltd. | Device for epitaxially growing objects and method for such a growth |
US5759263A (en) | 1996-12-05 | 1998-06-02 | Abb Research Ltd. | Device and a method for epitaxially growing objects by cvd |
AU7357798A (en) | 1997-04-03 | 1998-10-22 | U.S. Department Of Commerce | Method of forming metallic and ceramic thin film structures using metal halides and alkali metals |
SE9801190D0 (sv) | 1998-04-06 | 1998-04-06 | Abb Research Ltd | A method and a device for epitaxial growth of objects by Chemical Vapour Deposition |
KR100267885B1 (ko) | 1998-05-18 | 2000-11-01 | 서성기 | 반도체 박막증착장치 |
US6179913B1 (en) * | 1999-04-16 | 2001-01-30 | Cbl Technologies, Inc. | Compound gas injection system and methods |
KR100319494B1 (ko) * | 1999-07-15 | 2002-01-09 | 김용일 | 원자층 에피택시 공정을 위한 반도체 박막 증착장치 |
KR100360401B1 (ko) * | 2000-03-17 | 2002-11-13 | 삼성전자 주식회사 | 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치 |
DE10055182A1 (de) | 2000-11-08 | 2002-05-29 | Aixtron Ag | CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter |
JP2002170774A (ja) | 2000-11-30 | 2002-06-14 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2003017417A (ja) * | 2001-07-03 | 2003-01-17 | Hitachi Cable Ltd | エピタキシャルウェハ製造装置 |
KR20220063360A (ko) | 2020-11-10 | 2022-05-17 | 엘지디스플레이 주식회사 | 플렉서블 표시 장치 및 그 제조 방법 |
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2003
- 2003-04-16 US US10/414,787 patent/US7118781B1/en not_active Expired - Lifetime
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2004
- 2004-02-17 TW TW093103761A patent/TW200427861A/zh unknown
- 2004-02-19 JP JP2006508772A patent/JP4679510B2/ja not_active Expired - Lifetime
- 2004-02-19 WO PCT/US2004/004943 patent/WO2005028701A2/en active Search and Examination
- 2004-02-19 EP EP04809290A patent/EP1613791B1/de not_active Expired - Lifetime
- 2004-02-19 AT AT04809290T patent/ATE486977T1/de not_active IP Right Cessation
- 2004-02-19 EP EP20100176491 patent/EP2253734B1/de not_active Expired - Lifetime
- 2004-02-19 DE DE602004029877T patent/DE602004029877D1/de not_active Expired - Lifetime
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- 2006-08-29 US US11/512,800 patent/US8430960B2/en active Active
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EP2253734A3 (de) | 2011-04-06 |
EP1613791A2 (de) | 2006-01-11 |
EP1613791B1 (de) | 2010-11-03 |
DE602004029877D1 (de) | 2010-12-16 |
JP2011021278A (ja) | 2011-02-03 |
US20060216416A1 (en) | 2006-09-28 |
TW200427861A (en) | 2004-12-16 |
EP2253734B1 (de) | 2015-04-22 |
US20070101939A1 (en) | 2007-05-10 |
US7118781B1 (en) | 2006-10-10 |
JP4679510B2 (ja) | 2011-04-27 |
WO2005028701A2 (en) | 2005-03-31 |
JP5209022B2 (ja) | 2013-06-12 |
EP2253734A2 (de) | 2010-11-24 |
WO2005028701A3 (en) | 2005-06-30 |
JP2006523777A (ja) | 2006-10-19 |
US8430960B2 (en) | 2013-04-30 |
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