ATE486977T1 - Verfahren und system zur bekämpfung von ablagerungen - Google Patents

Verfahren und system zur bekämpfung von ablagerungen

Info

Publication number
ATE486977T1
ATE486977T1 AT04809290T AT04809290T ATE486977T1 AT E486977 T1 ATE486977 T1 AT E486977T1 AT 04809290 T AT04809290 T AT 04809290T AT 04809290 T AT04809290 T AT 04809290T AT E486977 T1 ATE486977 T1 AT E486977T1
Authority
AT
Austria
Prior art keywords
reaction chamber
gas
flowing
substrate
process gas
Prior art date
Application number
AT04809290T
Other languages
English (en)
Inventor
Joseph John Sumakeris
Michael James Paisley
Michael O'loughlin
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE486977T1 publication Critical patent/ATE486977T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488—Protection of windows for introduction of radiation into the coating chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
AT04809290T 2003-04-16 2004-02-19 Verfahren und system zur bekämpfung von ablagerungen ATE486977T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/414,787 US7118781B1 (en) 2003-04-16 2003-04-16 Methods for controlling formation of deposits in a deposition system and deposition methods including the same
PCT/US2004/004943 WO2005028701A2 (en) 2003-04-16 2004-02-19 Methods and apparatus for controlling formation of deposits in a deposition system and deposition systems and methods including the same

Publications (1)

Publication Number Publication Date
ATE486977T1 true ATE486977T1 (de) 2010-11-15

Family

ID=34375145

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04809290T ATE486977T1 (de) 2003-04-16 2004-02-19 Verfahren und system zur bekämpfung von ablagerungen

Country Status (7)

Country Link
US (2) US7118781B1 (de)
EP (2) EP2253734B1 (de)
JP (2) JP4679510B2 (de)
AT (1) ATE486977T1 (de)
DE (1) DE602004029877D1 (de)
TW (1) TW200427861A (de)
WO (1) WO2005028701A2 (de)

Families Citing this family (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7052546B1 (en) * 2003-08-28 2006-05-30 Cape Simulations, Inc. High-purity crystal growth
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
TWI344469B (en) 2005-04-07 2011-07-01 Nippon Catalytic Chem Ind Polyacrylic acid (salt) water-absorbent resin, production process thereof, and acrylic acid used in polymerization for production of water-absorbent resin
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
TWI419934B (zh) 2005-12-13 2013-12-21 Asahi Kasei Chemicals Corp 水系有機．無機複合組成物
JP4534978B2 (ja) * 2005-12-21 2010-09-01 トヨタ自動車株式会社 半導体薄膜製造装置
TWI394789B (zh) 2005-12-22 2013-05-01 Nippon Catalytic Chem Ind 吸水性樹脂組成物及其製造方法、吸收性物品
JP4953472B2 (ja) 2006-02-28 2012-06-13 ラム・リサーチ・アクチエンゲゼルシヤフト ディスク状物品を液体処理する装置及び方法
EP1837348B9 (de) 2006-03-24 2020-01-08 Nippon Shokubai Co.,Ltd. Wasserabsorbierendes Harz und Verfahren zu seiner Herstellung
US8647435B1 (en) * 2006-10-11 2014-02-11 Ostendo Technologies, Inc. HVPE apparatus and methods for growth of p-type single crystal group III nitride materials
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
JP5202839B2 (ja) * 2006-12-25 2013-06-05 東京エレクトロン株式会社 成膜装置および成膜方法
JP5051875B2 (ja) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 成膜装置および成膜方法
JP2011501409A (ja) * 2007-10-10 2011-01-06 イザ，マイケル 化学蒸着反応チャンバ
US8847249B2 (en) 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US8259769B1 (en) 2008-07-14 2012-09-04 Soraa, Inc. Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US8143148B1 (en) 2008-07-14 2012-03-27 Soraa, Inc. Self-aligned multi-dielectric-layer lift off process for laser diode stripes
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
JP2011530194A (ja) 2008-08-04 2011-12-15 ソラア インコーポレーテッド 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス
US9328417B2 (en) * 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
US8422525B1 (en) 2009-03-28 2013-04-16 Soraa, Inc. Optical device structure using miscut GaN substrates for laser applications
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US8242522B1 (en) 2009-05-12 2012-08-14 Soraa, Inc. Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm
US8254425B1 (en) 2009-04-17 2012-08-28 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8294179B1 (en) 2009-04-17 2012-10-23 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
JP5780605B2 (ja) 2009-04-13 2015-09-16 ソラア レイザー ダイオード インク レーザ利用のためのｇａｎ基板を用いた光学素子構造
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8416825B1 (en) 2009-04-17 2013-04-09 Soraa, Inc. Optical device structure using GaN substrates and growth structure for laser applications
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
CN101924023A (zh) * 2009-06-09 2010-12-22 日本派欧尼株式会社 Iii族氮化物半导体的气相生长装置
US8314429B1 (en) 2009-09-14 2012-11-20 Soraa, Inc. Multi color active regions for white light emitting diode
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
JP2013505588A (ja) 2009-09-18 2013-02-14 ソラア インコーポレーテッド 電流密度操作を用いた電力発光ダイオード及び方法
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US8952116B2 (en) 2009-09-29 2015-02-10 Nippon Shokubai Co., Ltd. Particulate water absorbent and process for production thereof
US8075692B2 (en) * 2009-11-18 2011-12-13 Rec Silicon Inc Fluid bed reactor
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9927611B2 (en) 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
EP2553143B1 (de) * 2010-03-29 2017-10-04 Koolerheadz Modulare gasinjektionsvorrichtung
US20110247556A1 (en) * 2010-03-31 2011-10-13 Soraa, Inc. Tapered Horizontal Growth Chamber
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
US8486192B2 (en) 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US8975615B2 (en) 2010-11-09 2015-03-10 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
TW201239129A (en) 2010-12-20 2012-10-01 Samsung Led Co Ltd Chemical vapor deposition apparatus and method of manufacturing LED using the same
US9318875B1 (en) 2011-01-24 2016-04-19 Soraa Laser Diode, Inc. Color converting element for laser diode
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
US9236530B2 (en) 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
US9287684B2 (en) 2011-04-04 2016-03-15 Soraa Laser Diode, Inc. Laser package having multiple emitters with color wheel
US9512520B2 (en) 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
US9646827B1 (en) 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
US20130078375A1 (en) * 2011-09-26 2013-03-28 Peter Krotov Deposition source integration into coater
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
KR101829800B1 (ko) * 2011-12-26 2018-03-29 엘지이노텍 주식회사 증착 장치 및 증착 방법
US9020003B1 (en) 2012-03-14 2015-04-28 Soraa Laser Diode, Inc. Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
US9800016B1 (en) 2012-04-05 2017-10-24 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9343871B1 (en) 2012-04-05 2016-05-17 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9088135B1 (en) 2012-06-29 2015-07-21 Soraa Laser Diode, Inc. Narrow sized laser diode
US9184563B1 (en) 2012-08-30 2015-11-10 Soraa Laser Diode, Inc. Laser diodes with an etched facet and surface treatment
JP5343162B1 (ja) * 2012-10-26 2013-11-13 エピクルー株式会社 エピタキシャル成長装置
JP5971110B2 (ja) * 2012-12-20 2016-08-17 住友電気工業株式会社 炭化珪素基板の製造方法および製造装置
JP6026333B2 (ja) * 2013-03-25 2016-11-16 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
JP6065762B2 (ja) 2013-06-21 2017-01-25 株式会社デンソー 炭化珪素半導体成膜装置およびそれを用いた成膜方法
US9166372B1 (en) 2013-06-28 2015-10-20 Soraa Laser Diode, Inc. Gallium nitride containing laser device configured on a patterned substrate
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9520695B2 (en) 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9209596B1 (en) 2014-02-07 2015-12-08 Soraa Laser Diode, Inc. Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
JP6320831B2 (ja) * 2014-04-16 2018-05-09 株式会社ニューフレアテクノロジー サセプタ処理方法及びサセプタ処理用プレート
US9564736B1 (en) 2014-06-26 2017-02-07 Soraa Laser Diode, Inc. Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
JP6424384B2 (ja) * 2014-08-01 2018-11-21 昭和電工株式会社 化学気相成長方法
US12126143B2 (en) 2014-11-06 2024-10-22 Kyocera Sld Laser, Inc. Method of manufacture for an ultraviolet emitting optoelectronic device
US9246311B1 (en) 2014-11-06 2016-01-26 Soraa Laser Diode, Inc. Method of manufacture for an ultraviolet laser diode
US9666677B1 (en) 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
US9653642B1 (en) 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
JP6054471B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
JP6050860B1 (ja) * 2015-05-26 2016-12-21 株式会社日本製鋼所 プラズマ原子層成長装置
JP6054470B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10879673B2 (en) 2015-08-19 2020-12-29 Soraa Laser Diode, Inc. Integrated white light source using a laser diode and a phosphor in a surface mount device package
US10938182B2 (en) 2015-08-19 2021-03-02 Soraa Laser Diode, Inc. Specialized integrated light source using a laser diode
US11437775B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. Integrated light source using a laser diode
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
KR20230097206A (ko) 2017-03-29 2023-06-30 팔리두스, 인크. SiC 용적측정 형태 및 보올을 형성하는 방법
WO2018185850A1 (ja) * 2017-04-04 2018-10-11 三菱電機株式会社 炭化珪素エピタキシャルウエハの製造方法及び炭化珪素半導体装置の製造方法
DE112017007406B4 (de) * 2017-04-06 2025-04-24 Mitsubishi Electric Corporation Verfahren zum Herstellen eines SiC-Epitaxiewafers, Verwendung eines hergestellten SiC-Epitaxiewafers in einer SiC-Vorrichtung, Verwendung einer SiC-Vorrichtung in einem Leistungsumwandlungsgerät
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
JP7115084B2 (ja) * 2018-07-10 2022-08-09 住友電気工業株式会社 炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
JP7242979B2 (ja) * 2018-12-17 2023-03-22 株式会社レゾナック ＳｉＣエピタキシャル成長装置
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US10903623B2 (en) 2019-05-14 2021-01-26 Soraa Laser Diode, Inc. Method and structure for manufacturable large area gallium and nitrogen containing substrate
US11228158B2 (en) 2019-05-14 2022-01-18 Kyocera Sld Laser, Inc. Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
US12516411B2 (en) 2019-05-27 2026-01-06 Schunk Xycarb Technology B.V. Chemical vapor deposition chamber article
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices
JP2025069089A (ja) * 2023-10-17 2025-04-30 エルピーイー・エッセ・ピ・ア 半導体デバイスを製造するための装置
DE102024111991A1 (de) * 2024-02-16 2025-08-21 Aixtron Se CVD-Reaktor sowie Verfahren zu dessen Verwendung und Einrichtung
WO2025172419A2 (de) 2024-02-16 2025-08-21 Aixtron Se Verfahren und vorrichtung zum abscheiden von n-dotiertem sic
WO2025228867A1 (de) 2024-04-29 2025-11-06 Aixtron Se Cvd-reaktor sowie verfahren zu dessen verwendung und einrichtung

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1749201A (en) 1928-05-28 1930-03-04 Paul W Prutzman Mercury-bromin derivative of fluorescein
US2759855A (en) * 1953-08-24 1956-08-21 Eagle Picher Co Coated electronic device and method of making same
JPS5176968A (ja) * 1974-12-27 1976-07-03 Fujitsu Ltd Kisoseichoho
JPS607378B2 (ja) 1977-04-13 1985-02-23 株式会社日立製作所 Ｃｖｄ装置
JPS59209643A (ja) * 1983-05-12 1984-11-28 Ricoh Co Ltd 光化学気相成長装置
FR2591616A1 (fr) * 1985-12-17 1987-06-19 Labo Electronique Physique Chambre de reacteur pour croissance epitaxiale en phase vapeur des materiaux semiconducteurs.
FR2599558B1 (fr) * 1986-05-27 1988-09-02 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat
US4756927A (en) * 1986-05-29 1988-07-12 Massachusetts Institute Of Technology Method and apparatus for refractory metal deposition
DE3772659D1 (de) * 1986-06-28 1991-10-10 Ulvac Corp Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik.
US4800105A (en) * 1986-07-22 1989-01-24 Nihon Shinku Gijutsu Kabushiki Kaisha Method of forming a thin film by chemical vapor deposition
EP0255454A3 (de) * 1986-07-26 1991-11-21 Nihon Shinku Gijutsu Kabushiki Kaisha Anordnung für chemischen Dampfniederschlag
US4778693A (en) * 1986-10-17 1988-10-18 Quantronix Corporation Photolithographic mask repair system
FR2628985B1 (fr) * 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
JPH02222134A (ja) * 1989-02-23 1990-09-04 Nobuo Mikoshiba 薄膜形成装置
US5005519A (en) * 1990-03-14 1991-04-09 Fusion Systems Corporation Reaction chamber having non-clouded window
US5085727A (en) * 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
US5334277A (en) * 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
US5433169A (en) * 1990-10-25 1995-07-18 Nichia Chemical Industries, Ltd. Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer
JPH04348031A (ja) * 1990-12-28 1992-12-03 Mitsubishi Electric Corp 化学気相成長装置
JPH06338466A (ja) * 1993-05-31 1994-12-06 Sony Corp 気相成長装置
US5449535A (en) * 1994-06-13 1995-09-12 Competitive Technologies, Inc. Light controlled vapor deposition
SE9500326D0 (sv) * 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
US5620524A (en) * 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
SE9502288D0 (sv) * 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
US6030661A (en) * 1995-08-04 2000-02-29 Abb Research Ltd. Device and a method for epitaxially growing objects by CVD
JPH0966801A (ja) * 1995-08-31 1997-03-11 Tokai Rika Co Ltd ギヤ機構およびプリテンショナ
SE9503428D0 (sv) * 1995-10-04 1995-10-04 Abb Research Ltd A method for epitaxially growing objects and a device for such a growth
SE9503426D0 (sv) * 1995-10-04 1995-10-04 Abb Research Ltd A device for heat treatment of objects and a method for producing a susceptor
DE19603323A1 (de) * 1996-01-30 1997-08-07 Siemens Ag Verfahren und Vorrichtung zum Herstellen von SiC durch CVD mit verbesserter Gasausnutzung
SE9600704D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
SE9600705D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US6039812A (en) * 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
US5759263A (en) * 1996-12-05 1998-06-02 Abb Research Ltd. Device and a method for epitaxially growing objects by cvd
WO1998044164A1 (en) 1997-04-03 1998-10-08 U.S. Department Of Commerce National Institute Of Standards And Technology Method of forming metallic and ceramic thin film structures using metal halides and alkali metals
SE9801190D0 (sv) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
KR100267885B1 (ko) 1998-05-18 2000-11-01 서성기 반도체 박막증착장치
US6179913B1 (en) * 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
KR100319494B1 (ko) * 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치
KR100360401B1 (ko) * 2000-03-17 2002-11-13 삼성전자 주식회사 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
DE10055182A1 (de) 2000-11-08 2002-05-29 Aixtron Ag CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
JP2002170774A (ja) 2000-11-30 2002-06-14 Hitachi Kokusai Electric Inc 基板処理装置
JP2003017417A (ja) * 2001-07-03 2003-01-17 Hitachi Cable Ltd エピタキシャルウェハ製造装置
KR20220063360A (ko) 2020-11-10 2022-05-17 엘지디스플레이 주식회사 플렉서블 표시 장치 및 그 제조 방법

Also Published As

Publication number Publication date
EP2253734B1 (de) 2015-04-22
EP1613791A2 (de) 2006-01-11
JP2011021278A (ja) 2011-02-03
TW200427861A (en) 2004-12-16
JP2006523777A (ja) 2006-10-19
WO2005028701A2 (en) 2005-03-31
JP5209022B2 (ja) 2013-06-12
EP2253734A2 (de) 2010-11-24
JP4679510B2 (ja) 2011-04-27
US20060216416A1 (en) 2006-09-28
EP2253734A3 (de) 2011-04-06
WO2005028701A3 (en) 2005-06-30
DE602004029877D1 (de) 2010-12-16
US7118781B1 (en) 2006-10-10
US20070101939A1 (en) 2007-05-10
US8430960B2 (en) 2013-04-30
EP1613791B1 (de) 2010-11-03

Similar Documents

Publication Publication Date Title
ATE486977T1 (de) Verfahren und system zur bekämpfung von ablagerungen
TW200625438A (en) Method for selective etching
CY1109426T1 (el) Κεραμικη συνθετη επενδυση τοιχου
ATE484771T1 (de) Verfahren und vorrichtung zum ausbilden eines projektionsschirms oder eines projektionsvolumens
TW200503055A (en) Method for forming pattern and drop discharge apparatus
ATE556428T1 (de) Reinigungsapparat und reingungsverfahren
ATE461155T1 (de) Verfahren und vorrichtung zum blasenfreien transportieren, homogenisieren und konditionieren von geschmolzenem glas
SE0301866D0 (sv) Sätt och anordning för avskiljning av svaveldioxid från en gas
DE50311649D1 (de) Verfahren und Vorrichtung zur grossflächigen Beschichtung von Substraten bei Atmosphärendruckbedingungen
MY142184A (en) Method and apparatus for transporting a substrate using non-newtonian fluid
TW200737298A (en) Substrate holding device, exposure device, exposure method, and device fabrication method
WO2002098199A3 (en) Method and system for marking and determining the authenticity of liquid hydrocarbons
SE0501418L (sv) Metod och medel för att åstadkomma vätsketransport
WO2002076878A3 (en) Method and structure for microfluidic flow guiding
MA27803A1 (fr) Procede et dispositif de traitement d'une couche de materiau en vrac
GB0108738D0 (en) Turbulent flow drag reduction
DE502006003786D1 (de) Vorrichtung und verfahren zur oberflächenbehandlung von substraten
TW200500152A (en) Apparatus and method for cleaning surfaces of semiconductor wafers using ozone
DE59907309D1 (de) Verfahren und vorrichtung zur nassreinigung von rohrgasströmen
ATE317304T1 (de) Verfahren und vorrichtung zum zweidimensionalen aufbau von partikeln
DE602004025591D1 (de) Verfahren zur herstellung zytotoxischer lymphozyten
DE602006005148D1 (de) Verfahren und vorrichtung zur folienextrusion
DE50301972D1 (de) Verfahren und Vorrichtung zur Temperierung von Luft in wenigstens zwei Bereichen eines Raumes
WO2004004571A3 (en) Method and apparatus for stopping and dissolving acoustically active particles in fluid
DE602004007573D1 (de) Verfahren zur Vermeidung von Ablagerungen von Verunreinigungsteilchen auf die Oberfläche eines Mikrobauteils, Aufbewahrungsvorrichtung für ein Mikrobauteil und Vorrichtung zur Abscheidung von dünnen Schichten

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties