JP5188080B2 - 撮像装置、撮像装置の駆動方法、及び読み出し装置 - Google Patents

撮像装置、撮像装置の駆動方法、及び読み出し装置 Download PDF

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Publication number
JP5188080B2
JP5188080B2 JP2007055769A JP2007055769A JP5188080B2 JP 5188080 B2 JP5188080 B2 JP 5188080B2 JP 2007055769 A JP2007055769 A JP 2007055769A JP 2007055769 A JP2007055769 A JP 2007055769A JP 5188080 B2 JP5188080 B2 JP 5188080B2
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image
partial
pixel
reading
thinned
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Japanese (ja)
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JP2008219594A (ja
JP2008219594A5 (enExample
Inventor
径介 太田
誠二 橋本
和之 繁田
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Canon Inc
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Canon Inc
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Priority to JP2007055769A priority Critical patent/JP5188080B2/ja
Priority to US12/035,804 priority patent/US7859575B2/en
Priority to CN2008100852133A priority patent/CN101262552B/zh
Publication of JP2008219594A publication Critical patent/JP2008219594A/ja
Priority to US12/945,993 priority patent/US8624992B2/en
Publication of JP2008219594A5 publication Critical patent/JP2008219594A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/443—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading pixels from selected 2D regions of the array, e.g. for windowing or digital zooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/445—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by skipping some contiguous pixels within the read portion of the array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2007055769A 2007-03-06 2007-03-06 撮像装置、撮像装置の駆動方法、及び読み出し装置 Active JP5188080B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007055769A JP5188080B2 (ja) 2007-03-06 2007-03-06 撮像装置、撮像装置の駆動方法、及び読み出し装置
US12/035,804 US7859575B2 (en) 2007-03-06 2008-02-22 Imaging device and driving method thereof
CN2008100852133A CN101262552B (zh) 2007-03-06 2008-03-06 成像装置及其驱动方法
US12/945,993 US8624992B2 (en) 2007-03-06 2010-11-15 Imaging device and driving method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007055769A JP5188080B2 (ja) 2007-03-06 2007-03-06 撮像装置、撮像装置の駆動方法、及び読み出し装置

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JP2008219594A JP2008219594A (ja) 2008-09-18
JP2008219594A5 JP2008219594A5 (enExample) 2011-07-07
JP5188080B2 true JP5188080B2 (ja) 2013-04-24

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US (2) US7859575B2 (enExample)
JP (1) JP5188080B2 (enExample)
CN (1) CN101262552B (enExample)

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JP2015029259A (ja) * 2013-07-03 2015-02-12 キヤノン株式会社 撮像装置、撮像システム、センサおよび撮像装置の動作方法
JP6274788B2 (ja) 2013-08-28 2018-02-07 キヤノン株式会社 撮像装置、撮像システム及び撮像装置の駆動方法
DE102014223858B4 (de) * 2013-11-25 2021-09-23 Canon Kabushiki Kaisha Bildaufnahmevorrichtung und Bildsignalsteuerverfahren
JP6230395B2 (ja) 2013-12-06 2017-11-15 キヤノン株式会社 撮像装置およびその駆動方法
JP2015186234A (ja) * 2014-03-26 2015-10-22 ソニー株式会社 イメージセンサ、および電子装置
JP6389685B2 (ja) 2014-07-30 2018-09-12 キヤノン株式会社 撮像装置、および、撮像システム
US9979916B2 (en) 2014-11-21 2018-05-22 Canon Kabushiki Kaisha Imaging apparatus and imaging system
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JP6674219B2 (ja) 2015-10-01 2020-04-01 キヤノン株式会社 固体撮像装置及び撮像システム
DE102016213494A1 (de) * 2016-07-22 2018-01-25 Conti Temic Microelectronic Gmbh Kameravorrichtung sowie Verfahren zur Erfassung eines Umgebungsbereichs eines eigenen Fahrzeugs
DE102016213493A1 (de) 2016-07-22 2018-01-25 Conti Temic Microelectronic Gmbh Kameravorrichtung zur Aufnahme eines Umgebungsbereichs eines eigenen Fahrzeugs sowie Verfahren zur Bereitstellung einer Fahrerassistenzfunktion
JP6832155B2 (ja) * 2016-12-28 2021-02-24 ソニーセミコンダクタソリューションズ株式会社 画像処理装置、画像処理方法、及び画像処理システム
JP6929671B2 (ja) 2017-03-17 2021-09-01 キヤノン株式会社 撮像装置及び撮像システム
JP7150469B2 (ja) 2018-05-17 2022-10-11 キヤノン株式会社 撮像装置及び撮像システム
JP7204480B2 (ja) 2018-12-27 2023-01-16 キヤノン株式会社 撮像装置、撮像システム、移動体及び撮像装置の制御方法
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US11252366B2 (en) * 2019-11-19 2022-02-15 Waymo Llc Sensor read out mode for high resolution and low light imaging in-sync with LIDAR timing
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Publication number Publication date
JP2008219594A (ja) 2008-09-18
CN101262552B (zh) 2011-06-22
CN101262552A (zh) 2008-09-10
US20110058079A1 (en) 2011-03-10
US7859575B2 (en) 2010-12-28
US8624992B2 (en) 2014-01-07
US20080291304A1 (en) 2008-11-27

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