JP5183910B2 - 半導体素子の作製方法 - Google Patents

半導体素子の作製方法 Download PDF

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Publication number
JP5183910B2
JP5183910B2 JP2006313740A JP2006313740A JP5183910B2 JP 5183910 B2 JP5183910 B2 JP 5183910B2 JP 2006313740 A JP2006313740 A JP 2006313740A JP 2006313740 A JP2006313740 A JP 2006313740A JP 5183910 B2 JP5183910 B2 JP 5183910B2
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Prior art keywords
film
temperature
semiconductor film
semiconductor
substrate
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Expired - Fee Related
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JP2006313740A
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Japanese (ja)
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JP2007173788A5 (enExample
JP2007173788A (ja
Inventor
暁 齋藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006313740A priority Critical patent/JP5183910B2/ja
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Publication of JP2007173788A5 publication Critical patent/JP2007173788A5/ja
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  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2006313740A 2005-11-23 2006-11-21 半導体素子の作製方法 Expired - Fee Related JP5183910B2 (ja)

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JP2006313740A JP5183910B2 (ja) 2005-11-23 2006-11-21 半導体素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005337912 2005-11-23
JP2005337912 2005-11-23
JP2006313740A JP5183910B2 (ja) 2005-11-23 2006-11-21 半導体素子の作製方法

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JP2007173788A JP2007173788A (ja) 2007-07-05
JP2007173788A5 JP2007173788A5 (enExample) 2009-12-03
JP5183910B2 true JP5183910B2 (ja) 2013-04-17

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JP2006313740A Expired - Fee Related JP5183910B2 (ja) 2005-11-23 2006-11-21 半導体素子の作製方法

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102741977A (zh) * 2010-02-04 2012-10-17 国立大学法人东北大学 硅晶片和半导体装置
US9157681B2 (en) 2010-02-04 2015-10-13 National University Corporation Tohoku University Surface treatment method for atomically flattening a silicon wafer and heat treatment apparatus
JP2018037628A (ja) * 2016-08-31 2018-03-08 国立大学法人島根大学 パターニング方法、薄膜トランジスタ作製方法、および、パターニング装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62152172A (ja) * 1985-12-25 1987-07-07 Matsushita Electric Ind Co Ltd 非晶質シリコン薄膜トランジスタ
JP2629995B2 (ja) * 1989-12-29 1997-07-16 日本電気株式会社 薄膜トランジスタ
JP2003188387A (ja) * 2001-12-20 2003-07-04 Sony Corp 薄膜トランジスタ及びその製造方法
TWI235433B (en) * 2002-07-17 2005-07-01 Tokyo Electron Ltd Oxide film forming method, oxide film forming apparatus and electronic device material
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method

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