JP5159107B2 - 極薄ｓｏｉ／ｓｇｏｉ基板上の超高速ｓｉ／ｓｉｇｅ変調ドープ電界効果トランジスタ - Google Patents

極薄ｓｏｉ／ｓｇｏｉ基板上の超高速ｓｉ／ｓｉｇｅ変調ドープ電界効果トランジスタ Download PDF

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JP5159107B2
JP5159107B2 JP2006524911A JP2006524911A JP5159107B2 JP 5159107 B2 JP5159107 B2 JP 5159107B2 JP 2006524911 A JP2006524911 A JP 2006524911A JP 2006524911 A JP2006524911 A JP 2006524911A JP 5159107 B2 JP5159107 B2 JP 5159107B2
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layer
thickness
epitaxial
grown
strained
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JP2007519223A (ja
JP2007519223A5 (https=
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チュー、ジャック、オー
オーヤン、チチン、シー
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2006524911A 2003-08-29 2004-08-27 極薄ｓｏｉ／ｓｇｏｉ基板上の超高速ｓｉ／ｓｉｇｅ変調ドープ電界効果トランジスタ Expired - Fee Related JP5159107B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/652,400 2003-08-29
US10/652,400 US6855963B1 (en) 2003-08-29 2003-08-29 Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate
PCT/US2004/028045 WO2005036613A2 (en) 2003-08-29 2004-08-27 Ultra high-speed si/sige modulation-doped field effect transistors on ultra thin soi/sgoi substrate

Publications (3)

Publication Number Publication Date
JP2007519223A JP2007519223A (ja) 2007-07-12
JP2007519223A5 JP2007519223A5 (https=) 2012-11-29
JP5159107B2 true JP5159107B2 (ja) 2013-03-06

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JP2006524911A Expired - Fee Related JP5159107B2 (ja) 2003-08-29 2004-08-27 極薄ｓｏｉ／ｓｇｏｉ基板上の超高速ｓｉ／ｓｉｇｅ変調ドープ電界効果トランジスタ

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US (2) US6855963B1 (https=)
EP (1) EP1685590A2 (https=)
JP (1) JP5159107B2 (https=)
KR (1) KR100826838B1 (https=)
CN (1) CN100517614C (https=)
WO (1) WO2005036613A2 (https=)

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US7176504B1 (en) * 2005-09-28 2007-02-13 United Microelectronics Corp. SiGe MOSFET with an erosion preventing Six1Gey1 layer
US20070102834A1 (en) * 2005-11-07 2007-05-10 Enicks Darwin G Strain-compensated metastable compound base heterojunction bipolar transistor
US8530934B2 (en) 2005-11-07 2013-09-10 Atmel Corporation Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto
US20070148890A1 (en) * 2005-12-27 2007-06-28 Enicks Darwin G Oxygen enhanced metastable silicon germanium film layer
US7323392B2 (en) * 2006-03-28 2008-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. High performance transistor with a highly stressed channel
US20070262295A1 (en) * 2006-05-11 2007-11-15 Atmel Corporation A method for manipulation of oxygen within semiconductor materials
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
US7495250B2 (en) * 2006-10-26 2009-02-24 Atmel Corporation Integrated circuit structures having a boron- and carbon-doped etch-stop and methods, devices and systems related thereto
US7569913B2 (en) * 2006-10-26 2009-08-04 Atmel Corporation Boron etch-stop layer and methods related thereto
US7550758B2 (en) 2006-10-31 2009-06-23 Atmel Corporation Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
US7893475B2 (en) * 2007-01-24 2011-02-22 Macronix International Co., Ltd. Dynamic random access memory cell and manufacturing method thereof
US7791063B2 (en) * 2007-08-30 2010-09-07 Intel Corporation High hole mobility p-channel Ge transistor structure on Si substrate
CN100570823C (zh) * 2007-11-06 2009-12-16 清华大学 一种使用缩颈外延获得低位错密度外延薄膜的方法
US8293608B2 (en) * 2008-02-08 2012-10-23 Freescale Semiconductor, Inc. Intermediate product for a multichannel FET and process for obtaining an intermediate product
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CN102623487B (zh) * 2011-01-26 2015-04-08 中国科学院微电子研究所 半导体器件及其制造方法
US10490697B2 (en) 2011-12-03 2019-11-26 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
US10158044B2 (en) 2011-12-03 2018-12-18 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
WO2013082592A1 (en) * 2011-12-03 2013-06-06 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
DE112013000798B4 (de) 2012-02-01 2024-07-25 Sensor Electronic Technology, Inc. Epitaktische Technik zum Reduzieren von Schraubenversetzungen in unter Spannung befindlichen Halbleiterverbundstoffen
US8648388B2 (en) 2012-02-15 2014-02-11 International Business Machines Corporation High performance multi-finger strained silicon germanium channel PFET and method of fabrication
US8891573B2 (en) 2012-05-14 2014-11-18 Arizona Board Of Regents 6.1 angstrom III-V and II-VI semiconductor platform
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Also Published As

Publication number Publication date
US6855963B1 (en) 2005-02-15
WO2005036613A2 (en) 2005-04-21
JP2007519223A (ja) 2007-07-12
CN1894782A (zh) 2007-01-10
US7098057B2 (en) 2006-08-29
KR20060118407A (ko) 2006-11-23
KR100826838B1 (ko) 2008-05-06
WO2005036613A3 (en) 2005-07-07
US20050127392A1 (en) 2005-06-16
CN100517614C (zh) 2009-07-22
EP1685590A2 (en) 2006-08-02
US20050045905A1 (en) 2005-03-03

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