CN100397596C - 制备场效应晶体管横向沟道的方法及场效应晶体管 - Google Patents
制备场效应晶体管横向沟道的方法及场效应晶体管 Download PDFInfo
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- CN100397596C CN100397596C CNB2004100490609A CN200410049060A CN100397596C CN 100397596 C CN100397596 C CN 100397596C CN B2004100490609 A CNB2004100490609 A CN B2004100490609A CN 200410049060 A CN200410049060 A CN 200410049060A CN 100397596 C CN100397596 C CN 100397596C
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- 238000000034 method Methods 0.000 title claims abstract description 52
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- 229910052710 silicon Inorganic materials 0.000 claims description 99
- 239000010703 silicon Substances 0.000 claims description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 98
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 41
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 33
- 238000005516 engineering process Methods 0.000 claims description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 20
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
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- 238000011065 in-situ storage Methods 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 10
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
- B01D35/14—Safety devices specially adapted for filtration; Devices for indicating clogging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
Abstract
Description
Claims (36)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/462,933 | 2003-06-17 | ||
US10/462,933 US6927414B2 (en) | 2003-06-17 | 2003-06-17 | High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1574252A CN1574252A (zh) | 2005-02-02 |
CN100397596C true CN100397596C (zh) | 2008-06-25 |
Family
ID=33517002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100490609A Expired - Fee Related CN100397596C (zh) | 2003-06-17 | 2004-06-11 | 制备场效应晶体管横向沟道的方法及场效应晶体管 |
Country Status (4)
Country | Link |
---|---|
US (3) | US6927414B2 (zh) |
KR (1) | KR100734820B1 (zh) |
CN (1) | CN100397596C (zh) |
TW (1) | TWI332269B (zh) |
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US7045847B2 (en) * | 2003-08-11 | 2006-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with high-k gate dielectric |
US7303949B2 (en) * | 2003-10-20 | 2007-12-04 | International Business Machines Corporation | High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
US6908824B2 (en) * | 2003-11-06 | 2005-06-21 | Chartered Semiconductor Manufacturing Ltd. | Self-aligned lateral heterojunction bipolar transistor |
US7247534B2 (en) * | 2003-11-19 | 2007-07-24 | International Business Machines Corporation | Silicon device on Si:C-OI and SGOI and method of manufacture |
US7217611B2 (en) * | 2003-12-29 | 2007-05-15 | Intel Corporation | Methods for integrating replacement metal gate structures |
JP4177775B2 (ja) * | 2004-03-16 | 2008-11-05 | 株式会社東芝 | 半導体基板及びその製造方法並びに半導体装置 |
US7023018B2 (en) * | 2004-04-06 | 2006-04-04 | Texas Instruments Incorporated | SiGe transistor with strained layers |
US20050253205A1 (en) * | 2004-05-17 | 2005-11-17 | Fujitsu Limited | Semiconductor device and method for fabricating the same |
KR100531177B1 (ko) * | 2004-08-07 | 2005-11-29 | 재단법인서울대학교산학협력재단 | 격자 변형된 반도체 박막 형성 방법 |
JP2006108365A (ja) | 2004-10-05 | 2006-04-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
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US7348611B2 (en) * | 2005-04-22 | 2008-03-25 | International Business Machines Corporation | Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof |
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TWI267926B (en) * | 2005-09-23 | 2006-12-01 | Ind Tech Res Inst | A new method for high mobility enhancement strained channel CMOS with single workfunction metal-gate |
US7947546B2 (en) * | 2005-10-31 | 2011-05-24 | Chartered Semiconductor Manufacturing, Ltd. | Implant damage control by in-situ C doping during SiGe epitaxy for device applications |
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JP2007158295A (ja) * | 2005-11-10 | 2007-06-21 | Seiko Epson Corp | 半導体装置および半導体装置の製造方法 |
US8255843B2 (en) * | 2005-11-14 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing strained-silicon semiconductor device |
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US7681852B2 (en) * | 2007-01-22 | 2010-03-23 | Charles Magee | Vehicle cup and plate holders |
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US7741658B2 (en) * | 2007-08-21 | 2010-06-22 | International Business Machines Corporation | Self-aligned super stressed PFET |
KR20090049008A (ko) * | 2007-11-12 | 2009-05-15 | 한국전자통신연구원 | 금속-절연체 전이(mit)소자를 이용한 트랜지스터발열제어 회로 및 그 발열제어 방법 |
US9153594B2 (en) * | 2008-01-09 | 2015-10-06 | Faquir C. Jain | Nonvolatile memory and three-state FETs using cladded quantum dot gate structure |
DE102008006961A1 (de) * | 2008-01-31 | 2009-08-27 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Erzeugen eines verformten Kanalgebiets in einem Transistor durch eine tiefe Implantation einer verformungsinduzierenden Sorte unter das Kanalgebiet |
US7968910B2 (en) | 2008-04-15 | 2011-06-28 | International Business Machines Corporation | Complementary field effect transistors having embedded silicon source and drain regions |
US7964487B2 (en) * | 2008-06-04 | 2011-06-21 | International Business Machines Corporation | Carrier mobility enhanced channel devices and method of manufacture |
US7759142B1 (en) | 2008-12-31 | 2010-07-20 | Intel Corporation | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains |
US8080820B2 (en) * | 2009-03-16 | 2011-12-20 | Intel Corporation | Apparatus and methods for improving parallel conduction in a quantum well device |
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US8148780B2 (en) | 2009-03-24 | 2012-04-03 | Micron Technology, Inc. | Devices and systems relating to a memory cell having a floating body |
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CN101819996B (zh) * | 2010-04-16 | 2011-10-26 | 清华大学 | 半导体结构 |
CN101859771B (zh) * | 2010-05-07 | 2012-03-28 | 清华大学 | 一种具有应变沟道的cmos器件结构及其形成方法 |
DE102010029531B4 (de) | 2010-05-31 | 2017-09-07 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Verringerung der Defektraten in PFET-Transistoren mit einem Si/Ge-Halbleitermaterial, das durch epitaktisches Wachsen hergestellt ist |
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KR102434914B1 (ko) | 2016-01-15 | 2022-08-23 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법 |
CN110571268B (zh) * | 2019-08-15 | 2021-01-29 | 西安电子科技大学 | 具有部分宽禁带材料/硅材料异质结的igbt及其制作方法 |
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2003
- 2003-06-17 US US10/462,933 patent/US6927414B2/en not_active Expired - Lifetime
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2004
- 2004-05-14 KR KR1020040034172A patent/KR100734820B1/ko not_active IP Right Cessation
- 2004-05-31 TW TW093115569A patent/TWI332269B/zh not_active IP Right Cessation
- 2004-06-11 CN CNB2004100490609A patent/CN100397596C/zh not_active Expired - Fee Related
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2005
- 2005-06-22 US US11/158,726 patent/US7569442B2/en active Active
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Patent Citations (6)
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US5285088A (en) * | 1991-09-17 | 1994-02-08 | Nec Corporation | High electron mobility transistor |
US5847419A (en) * | 1996-09-17 | 1998-12-08 | Kabushiki Kaisha Toshiba | Si-SiGe semiconductor device and method of fabricating the same |
US6190975B1 (en) * | 1996-09-17 | 2001-02-20 | Matsushita Electric Industrial Co., Ltd. | Method of forming HCMOS devices with a silicon-germanium-carbon compound semiconductor layer |
US5891769A (en) * | 1997-04-07 | 1999-04-06 | Motorola, Inc. | Method for forming a semiconductor device having a heteroepitaxial layer |
US6319799B1 (en) * | 2000-05-09 | 2001-11-20 | Board Of Regents, The University Of Texas System | High mobility heterojunction transistor and method |
US6524935B1 (en) * | 2000-09-29 | 2003-02-25 | International Business Machines Corporation | Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique |
Also Published As
Publication number | Publication date |
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US20050239241A1 (en) | 2005-10-27 |
CN1574252A (zh) | 2005-02-02 |
US20040256614A1 (en) | 2004-12-23 |
KR100734820B1 (ko) | 2007-07-06 |
TW200524171A (en) | 2005-07-16 |
KR20040108552A (ko) | 2004-12-24 |
US20100159658A1 (en) | 2010-06-24 |
US6927414B2 (en) | 2005-08-09 |
US7902012B2 (en) | 2011-03-08 |
US7569442B2 (en) | 2009-08-04 |
TWI332269B (en) | 2010-10-21 |
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