FR2965975B1 - Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble - Google Patents

Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble

Info

Publication number
FR2965975B1
FR2965975B1 FR1058246A FR1058246A FR2965975B1 FR 2965975 B1 FR2965975 B1 FR 2965975B1 FR 1058246 A FR1058246 A FR 1058246A FR 1058246 A FR1058246 A FR 1058246A FR 2965975 B1 FR2965975 B1 FR 2965975B1
Authority
FR
France
Prior art keywords
semiconductor material
soil
self
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1058246A
Other languages
English (en)
Other versions
FR2965975A1 (fr
Inventor
Georgios Katsaros
Franceschi Silvano De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1058246A priority Critical patent/FR2965975B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to EP11769841.5A priority patent/EP2628172A1/fr
Priority to CN2011800597182A priority patent/CN103262224A/zh
Priority to JP2013532211A priority patent/JP2013543264A/ja
Priority to KR1020137011414A priority patent/KR20130101075A/ko
Priority to PCT/EP2011/067504 priority patent/WO2012049071A1/fr
Priority to US13/878,501 priority patent/US20130193484A1/en
Publication of FR2965975A1 publication Critical patent/FR2965975A1/fr
Application granted granted Critical
Publication of FR2965975B1 publication Critical patent/FR2965975B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un dispositif à au moins un transistor sur un substrat (1) en un premier matériau semiconducteur, chaque transistor (20, 20') comportant une électrode de grille (5), dite grille, deux électrodes conductrices (3, 4), un îlot (2) en second matériau semiconducteur, incrusté dans le substrat (1), définissant une région apte à former un canal, dite région de canal, et une couche isolante (6) séparant la grille (5) des deux électrodes (3, 4) et de la région de canal, caractérisé en ce que la région de canal est à l'intérieur de l'îlot (2) et est en contact électrique direct avec au moins une des deux électrodes conductrices (3, 4).
FR1058246A 2010-10-11 2010-10-11 Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble Expired - Fee Related FR2965975B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1058246A FR2965975B1 (fr) 2010-10-11 2010-10-11 Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble
CN2011800597182A CN103262224A (zh) 2010-10-11 2011-10-06 自组装半导体阱上的场效应晶体管
JP2013532211A JP2013543264A (ja) 2010-10-11 2011-10-06 自己組織化された半導体井戸（半導体ウェル）上の電界効果トランジスタ
KR1020137011414A KR20130101075A (ko) 2010-10-11 2011-10-06 자체 조립된 반도체 우물 상의 전계 효과 트랜지스터
EP11769841.5A EP2628172A1 (fr) 2010-10-11 2011-10-06 Transistor a effet de champ sur ilot de materiau semiconducteur auto-assemble
PCT/EP2011/067504 WO2012049071A1 (fr) 2010-10-11 2011-10-06 Transistor a effet de champ sur ilot de materiau semiconducteur auto-assemble
US13/878,501 US20130193484A1 (en) 2010-10-11 2011-10-06 Field-effect transistor on a self-assembled semiconductor well

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1058246A FR2965975B1 (fr) 2010-10-11 2010-10-11 Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble

Publications (2)

Publication Number Publication Date
FR2965975A1 FR2965975A1 (fr) 2012-04-13
FR2965975B1 true FR2965975B1 (fr) 2012-12-21

Family

ID=43823725

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1058246A Expired - Fee Related FR2965975B1 (fr) 2010-10-11 2010-10-11 Transistor a effet de champ sur ilot de matériau semi-conducteur auto-assemble

Country Status (7)

Country Link
US (1) US20130193484A1 (fr)
EP (1) EP2628172A1 (fr)
JP (1) JP2013543264A (fr)
KR (1) KR20130101075A (fr)
CN (1) CN103262224A (fr)
FR (1) FR2965975B1 (fr)
WO (1) WO2012049071A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611582B (zh) * 2013-04-10 2018-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US10340220B2 (en) * 2015-08-26 2019-07-02 Intel Corporation Compound lateral resistor structures for integrated circuitry

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69121629T2 (de) * 1990-04-27 1997-02-13 Nippon Electric Co Dünnfilmtransistor mit Schottky-Sperrschicht
DE10025264A1 (de) * 2000-05-22 2001-11-29 Max Planck Gesellschaft Feldeffekt-Transistor auf der Basis von eingebetteten Clusterstrukturen und Verfahren zu seiner Herstellung
US6515335B1 (en) * 2002-01-04 2003-02-04 International Business Machines Corporation Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
JP2003264290A (ja) * 2002-03-08 2003-09-19 Fujitsu Ltd 半導体装置及びその製造方法
US6927414B2 (en) * 2003-06-17 2005-08-09 International Business Machines Corporation High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
US7029964B2 (en) * 2003-11-13 2006-04-18 International Business Machines Corporation Method of manufacturing a strained silicon on a SiGe on SOI substrate
JP2006210854A (ja) * 2005-01-31 2006-08-10 Toshiba Corp 半導体装置及びその製造方法
JP2007158300A (ja) * 2005-12-07 2007-06-21 Korea Electronics Telecommun 低いショットキー障壁貫通トランジスタ及びその製造方法
FR2897202B1 (fr) * 2006-02-08 2008-09-12 St Microelectronics Crolles 2 Transistor mos a barriere de schottky sur film semi-conducteur entierement appauvri et procede de fabrication d'un tel transistor.
US7781801B2 (en) * 2006-09-25 2010-08-24 Alcatel-Lucent Usa Inc. Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
US8106381B2 (en) * 2006-10-18 2012-01-31 Translucent, Inc. Semiconductor structures with rare-earths

Also Published As

Publication number Publication date
KR20130101075A (ko) 2013-09-12
JP2013543264A (ja) 2013-11-28
EP2628172A1 (fr) 2013-08-21
WO2012049071A1 (fr) 2012-04-19
CN103262224A (zh) 2013-08-21
FR2965975A1 (fr) 2012-04-13
US20130193484A1 (en) 2013-08-01

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