CN100517614C - 高电子迁移率层结构及其制备方法 - Google Patents

高电子迁移率层结构及其制备方法 Download PDF

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Publication number
CN100517614C
CN100517614C CNB2004800247846A CN200480024784A CN100517614C CN 100517614 C CN100517614 C CN 100517614C CN B2004800247846 A CNB2004800247846 A CN B2004800247846A CN 200480024784 A CN200480024784 A CN 200480024784A CN 100517614 C CN100517614 C CN 100517614C
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China
Prior art keywords
layer
scope
semiconductor structure
electron mobility
high electron
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Expired - Fee Related
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CNB2004800247846A
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English (en)
Chinese (zh)
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CN1894782A (zh
Inventor
赵泽安
C.·欧阳齐庆
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CNB2004800247846A 2003-08-29 2004-08-27 高电子迁移率层结构及其制备方法 Expired - Fee Related CN100517614C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/652,400 2003-08-29
US10/652,400 US6855963B1 (en) 2003-08-29 2003-08-29 Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate

Publications (2)

Publication Number Publication Date
CN1894782A CN1894782A (zh) 2007-01-10
CN100517614C true CN100517614C (zh) 2009-07-22

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CNB2004800247846A Expired - Fee Related CN100517614C (zh) 2003-08-29 2004-08-27 高电子迁移率层结构及其制备方法

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US (2) US6855963B1 (https=)
EP (1) EP1685590A2 (https=)
JP (1) JP5159107B2 (https=)
KR (1) KR100826838B1 (https=)
CN (1) CN100517614C (https=)
WO (1) WO2005036613A2 (https=)

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US20070054460A1 (en) * 2005-06-23 2007-03-08 Atmel Corporation System and method for providing a nanoscale, highly selective, and thermally resilient silicon, germanium, or silicon-germanium etch-stop
US20080050883A1 (en) * 2006-08-25 2008-02-28 Atmel Corporation Hetrojunction bipolar transistor (hbt) with periodic multilayer base
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US7176504B1 (en) * 2005-09-28 2007-02-13 United Microelectronics Corp. SiGe MOSFET with an erosion preventing Six1Gey1 layer
US20070102834A1 (en) * 2005-11-07 2007-05-10 Enicks Darwin G Strain-compensated metastable compound base heterojunction bipolar transistor
US8530934B2 (en) 2005-11-07 2013-09-10 Atmel Corporation Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto
US20070148890A1 (en) * 2005-12-27 2007-06-28 Enicks Darwin G Oxygen enhanced metastable silicon germanium film layer
US7323392B2 (en) * 2006-03-28 2008-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. High performance transistor with a highly stressed channel
US20070262295A1 (en) * 2006-05-11 2007-11-15 Atmel Corporation A method for manipulation of oxygen within semiconductor materials
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
US7495250B2 (en) * 2006-10-26 2009-02-24 Atmel Corporation Integrated circuit structures having a boron- and carbon-doped etch-stop and methods, devices and systems related thereto
US7569913B2 (en) * 2006-10-26 2009-08-04 Atmel Corporation Boron etch-stop layer and methods related thereto
US7550758B2 (en) 2006-10-31 2009-06-23 Atmel Corporation Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
US7893475B2 (en) * 2007-01-24 2011-02-22 Macronix International Co., Ltd. Dynamic random access memory cell and manufacturing method thereof
US7791063B2 (en) * 2007-08-30 2010-09-07 Intel Corporation High hole mobility p-channel Ge transistor structure on Si substrate
CN100570823C (zh) * 2007-11-06 2009-12-16 清华大学 一种使用缩颈外延获得低位错密度外延薄膜的方法
US8293608B2 (en) * 2008-02-08 2012-10-23 Freescale Semiconductor, Inc. Intermediate product for a multichannel FET and process for obtaining an intermediate product
US8222657B2 (en) * 2009-02-23 2012-07-17 The Penn State Research Foundation Light emitting apparatus
KR101087939B1 (ko) 2009-06-17 2011-11-28 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
CN102623487B (zh) * 2011-01-26 2015-04-08 中国科学院微电子研究所 半导体器件及其制造方法
US10490697B2 (en) 2011-12-03 2019-11-26 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
US10158044B2 (en) 2011-12-03 2018-12-18 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
WO2013082592A1 (en) * 2011-12-03 2013-06-06 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
DE112013000798B4 (de) 2012-02-01 2024-07-25 Sensor Electronic Technology, Inc. Epitaktische Technik zum Reduzieren von Schraubenversetzungen in unter Spannung befindlichen Halbleiterverbundstoffen
US8648388B2 (en) 2012-02-15 2014-02-11 International Business Machines Corporation High performance multi-finger strained silicon germanium channel PFET and method of fabrication
US8891573B2 (en) 2012-05-14 2014-11-18 Arizona Board Of Regents 6.1 angstrom III-V and II-VI semiconductor platform
US9525053B2 (en) 2013-11-01 2016-12-20 Samsung Electronics Co., Ltd. Integrated circuit devices including strained channel regions and methods of forming the same
US9419082B2 (en) * 2014-04-23 2016-08-16 Globalfoundries Inc. Source/drain profile engineering for enhanced p-MOSFET
KR102155327B1 (ko) 2014-07-07 2020-09-11 삼성전자주식회사 전계 효과 트랜지스터 및 그 제조 방법
US9570590B1 (en) 2015-12-10 2017-02-14 International Business Machines Corporation Selective oxidation of buried silicon-germanium to form tensile strained silicon FinFETs
US9917154B2 (en) 2016-06-29 2018-03-13 International Business Machines Corporation Strained and unstrained semiconductor device features formed on the same substrate
SG10202101505UA (en) * 2016-08-23 2021-03-30 Qromis Inc Electronic power devices integrated with an engineered substrate
CN106549039A (zh) * 2016-11-03 2017-03-29 浙江大学 一种低功耗高性能锗沟道量子阱场效应晶体管
CN107221583B (zh) * 2017-05-17 2019-01-29 福建海佳彩亮光电科技有限公司 一种纵向结构led及其制备工艺
CN111863955B (zh) * 2019-04-25 2024-12-24 世界先进积体电路股份有限公司 半导体结构
KR102804745B1 (ko) * 2022-08-11 2025-05-12 충북대학교 산학협력단 나노시트 반도체소자 제조방법 및 이에 의하여 제조된 나노시트 반도체소자

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US6855963B1 (en) 2005-02-15
WO2005036613A2 (en) 2005-04-21
JP5159107B2 (ja) 2013-03-06
JP2007519223A (ja) 2007-07-12
CN1894782A (zh) 2007-01-10
US7098057B2 (en) 2006-08-29
KR20060118407A (ko) 2006-11-23
KR100826838B1 (ko) 2008-05-06
WO2005036613A3 (en) 2005-07-07
US20050127392A1 (en) 2005-06-16
EP1685590A2 (en) 2006-08-02
US20050045905A1 (en) 2005-03-03

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