JP5151569B2 - 圧電発振器 - Google Patents
圧電発振器 Download PDFInfo
- Publication number
- JP5151569B2 JP5151569B2 JP2008059479A JP2008059479A JP5151569B2 JP 5151569 B2 JP5151569 B2 JP 5151569B2 JP 2008059479 A JP2008059479 A JP 2008059479A JP 2008059479 A JP2008059479 A JP 2008059479A JP 5151569 B2 JP5151569 B2 JP 5151569B2
- Authority
- JP
- Japan
- Prior art keywords
- resin film
- semiconductor substrate
- vibrator
- piezoelectric oscillator
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 92
- 239000011347 resin Substances 0.000 claims description 90
- 229920005989 resin Polymers 0.000 claims description 90
- 229910010272 inorganic material Inorganic materials 0.000 claims description 8
- 239000011147 inorganic material Substances 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 239000010408 film Substances 0.000 description 135
- 238000000034 method Methods 0.000 description 40
- 239000010410 layer Substances 0.000 description 28
- 230000003071 parasitic effect Effects 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910000679 solder Inorganic materials 0.000 description 18
- 239000011521 glass Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 238000007747 plating Methods 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 230000007257 malfunction Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 239000009719 polyimide resin Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000797947 Paria Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008059479A JP5151569B2 (ja) | 2008-03-10 | 2008-03-10 | 圧電発振器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008059479A JP5151569B2 (ja) | 2008-03-10 | 2008-03-10 | 圧電発振器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009218788A JP2009218788A (ja) | 2009-09-24 |
| JP2009218788A5 JP2009218788A5 (enExample) | 2011-04-28 |
| JP5151569B2 true JP5151569B2 (ja) | 2013-02-27 |
Family
ID=41190242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008059479A Expired - Fee Related JP5151569B2 (ja) | 2008-03-10 | 2008-03-10 | 圧電発振器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5151569B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6888606B2 (ja) * | 2018-12-21 | 2021-06-16 | 株式会社村田製作所 | 高周波モジュール |
| JP7287116B2 (ja) * | 2019-05-30 | 2023-06-06 | セイコーエプソン株式会社 | 振動デバイスおよび電子機器 |
| JP2023138014A (ja) * | 2022-03-18 | 2023-09-29 | エスアイアイ・クリスタルテクノロジー株式会社 | 圧電振動片、圧電振動子、発振器および圧電振動片の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4479413B2 (ja) * | 2004-08-17 | 2010-06-09 | セイコーエプソン株式会社 | 圧電発振器 |
| JP2006109400A (ja) * | 2004-09-13 | 2006-04-20 | Seiko Epson Corp | 電子部品、回路基板、電子機器、電子部品の製造方法 |
| JP4600663B2 (ja) * | 2004-12-07 | 2010-12-15 | セイコーエプソン株式会社 | 温度補償型圧電発振器 |
| JP2008021792A (ja) * | 2006-07-12 | 2008-01-31 | Seiko Epson Corp | デバイスとその製造方法並びに電子機器 |
-
2008
- 2008-03-10 JP JP2008059479A patent/JP5151569B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009218788A (ja) | 2009-09-24 |
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