JP5147758B2 - 半導体装置の製造方法、半導体装置およびモールド金型 - Google Patents

半導体装置の製造方法、半導体装置およびモールド金型 Download PDF

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JP5147758B2
JP5147758B2 JP2009046355A JP2009046355A JP5147758B2 JP 5147758 B2 JP5147758 B2 JP 5147758B2 JP 2009046355 A JP2009046355 A JP 2009046355A JP 2009046355 A JP2009046355 A JP 2009046355A JP 5147758 B2 JP5147758 B2 JP 5147758B2
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cavity
island
runner
semiconductor device
mold
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JP2010109314A5 (enExample
JP2010109314A (ja
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茂治 吉羽
浩和 福田
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On Semiconductor Trading Ltd
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On Semiconductor Trading Ltd
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Priority to CN200910179607XA priority patent/CN101930933B/zh
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2009046355A 2008-09-30 2009-02-27 半導体装置の製造方法、半導体装置およびモールド金型 Active JP5147758B2 (ja)

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