JP5147403B2 - 歪みチャネルを備える二重ゲートデバイス - Google Patents

歪みチャネルを備える二重ゲートデバイス Download PDF

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Publication number
JP5147403B2
JP5147403B2 JP2007534608A JP2007534608A JP5147403B2 JP 5147403 B2 JP5147403 B2 JP 5147403B2 JP 2007534608 A JP2007534608 A JP 2007534608A JP 2007534608 A JP2007534608 A JP 2007534608A JP 5147403 B2 JP5147403 B2 JP 5147403B2
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semiconductor
layer
source
channel
semiconductor device
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Japanese (ja)
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JP2008515224A5 (enExample
JP2008515224A (ja
Inventor
テン、ブーン−ユー
ジー． サダカ、マリアム
アール． ホワイト、テッド
エル． バー、アレクサンダー
アール． コラグンタ、ベンカット
グェン、ビック−イェン
エイチ． ヴァルタニアン、ビクター
チャン、ダ
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2007534608A 2004-09-29 2005-08-31 歪みチャネルを備える二重ゲートデバイス Expired - Lifetime JP5147403B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/952,676 2004-09-29
US10/952,676 US7067868B2 (en) 2004-09-29 2004-09-29 Double gate device having a heterojunction source/drain and strained channel
PCT/US2005/031000 WO2006039037A1 (en) 2004-09-29 2005-08-31 Double gate device having a strained channel

Publications (3)

Publication Number Publication Date
JP2008515224A JP2008515224A (ja) 2008-05-08
JP2008515224A5 JP2008515224A5 (enExample) 2008-07-31
JP5147403B2 true JP5147403B2 (ja) 2013-02-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007534608A Expired - Lifetime JP5147403B2 (ja) 2004-09-29 2005-08-31 歪みチャネルを備える二重ゲートデバイス

Country Status (5)

Country Link
US (1) US7067868B2 (enExample)
EP (1) EP1797592A1 (enExample)
JP (1) JP5147403B2 (enExample)
KR (1) KR20070061565A (enExample)
WO (1) WO2006039037A1 (enExample)

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US20060197129A1 (en) * 2005-03-03 2006-09-07 Triquint Semiconductor, Inc. Buried and bulk channel finFET and method of making the same
US7446350B2 (en) * 2005-05-10 2008-11-04 International Business Machine Corporation Embedded silicon germanium using a double buried oxide silicon-on-insulator wafer
JP4256381B2 (ja) * 2005-11-09 2009-04-22 株式会社東芝 半導体装置
US7279758B1 (en) * 2006-05-24 2007-10-09 International Business Machines Corporation N-channel MOSFETs comprising dual stressors, and methods for forming the same
US20080293192A1 (en) * 2007-05-22 2008-11-27 Stefan Zollner Semiconductor device with stressors and methods thereof
KR100848242B1 (ko) * 2007-07-11 2008-07-24 주식회사 동부하이텍 반도체 소자 및 반도체 소자의 제조 방법
JP5164745B2 (ja) * 2007-09-03 2013-03-21 株式会社半導体エネルギー研究所 記憶装置
US7671418B2 (en) * 2007-09-14 2010-03-02 Advanced Micro Devices, Inc. Double layer stress for multiple gate transistors
US8007727B2 (en) 2008-05-30 2011-08-30 Intel Corporation Virtual semiconductor nanowire, and methods of using same
US20100279479A1 (en) * 2009-05-01 2010-11-04 Varian Semiconductor Equipment Associates, Inc. Formation Of Raised Source/Drain On A Strained Thin Film Implanted With Cold And/Or Molecular Carbon
US8053318B2 (en) 2009-06-25 2011-11-08 International Business Machines Corporation FET with replacement gate structure and method of fabricating the same
US8354719B2 (en) * 2010-02-18 2013-01-15 GlobalFoundries, Inc. Finned semiconductor device with oxygen diffusion barrier regions, and related fabrication methods
WO2011125455A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
JP5592281B2 (ja) * 2011-01-05 2014-09-17 猛英 白土 半導体装置及びその製造方法
US8803233B2 (en) * 2011-09-23 2014-08-12 International Business Machines Corporation Junctionless transistor
JP6050034B2 (ja) * 2012-06-12 2016-12-21 猛英 白土 半導体装置及びその製造方法
US8823059B2 (en) * 2012-09-27 2014-09-02 Intel Corporation Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
US8957476B2 (en) * 2012-12-20 2015-02-17 Intel Corporation Conversion of thin transistor elements from silicon to silicon germanium
US9559181B2 (en) 2013-11-26 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET device with buried sige oxide
US9147682B2 (en) 2013-01-14 2015-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Fin spacer protected source and drain regions in FinFETs
US9490365B2 (en) 2014-06-12 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor
US9490346B2 (en) 2014-06-12 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor
US9502538B2 (en) 2014-06-12 2016-11-22 Taiwan Semiconductor Manufacturing Co., Ltd Structure and formation method of fin-like field effect transistor
US9087689B1 (en) 2014-07-11 2015-07-21 Inoso, Llc Method of forming a stacked low temperature transistor and related devices
US8916872B1 (en) 2014-07-11 2014-12-23 Inoso, Llc Method of forming a stacked low temperature diode and related devices
KR102255174B1 (ko) 2014-10-10 2021-05-24 삼성전자주식회사 활성 영역을 갖는 반도체 소자 및 그 형성 방법
EP3329598A4 (en) 2015-07-29 2019-07-31 Circuit Seed, LLC COMPLEMENTARY POWER FIELD EFFECT TRANSISTOR DEVICES AND AMPLIFIERS
US10476457B2 (en) 2015-07-30 2019-11-12 Circuit Seed, Llc Low noise trans-impedance amplifiers based on complementary current field-effect transistor devices
WO2017019973A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Multi-stage and feed forward compensated complementary current field effect transistor amplifiers
CN108140614A (zh) 2015-07-30 2018-06-08 电路种子有限责任公司 基于互补电流场效应晶体管装置的参考产生器和电流源晶体管
US10283506B2 (en) 2015-12-14 2019-05-07 Circuit Seed, Llc Super-saturation current field effect transistor and trans-impedance MOS device
EP3676878A4 (en) * 2017-08-31 2020-11-04 Micron Technology, Inc. SEMICONDUCTOR DEVICES, HYBRID TRANSISTORS AND RELATED PROCESSES
KR102402945B1 (ko) 2017-08-31 2022-05-30 마이크론 테크놀로지, 인크 금속 산화물 반도체 디바이스의 접촉을 위한 반도체 디바이스, 트랜지스터, 및 관련된 방법
US11764303B2 (en) 2018-03-22 2023-09-19 Intel Corporation Thin film transistors having double gates
US11177366B2 (en) 2020-01-13 2021-11-16 International Business Machines Corporation Gate induced drain leakage reduction in FinFETs

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JP3450547B2 (ja) * 1995-09-14 2003-09-29 株式会社東芝 半導体装置およびその製造方法
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US7303949B2 (en) * 2003-10-20 2007-12-04 International Business Machines Corporation High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture

Also Published As

Publication number Publication date
US20060065927A1 (en) 2006-03-30
EP1797592A1 (en) 2007-06-20
KR20070061565A (ko) 2007-06-13
WO2006039037A1 (en) 2006-04-13
US7067868B2 (en) 2006-06-27
JP2008515224A (ja) 2008-05-08

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