JP5144766B2 - Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法 - Google Patents

Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法 Download PDF

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JP5144766B2
JP5144766B2 JP2010535150A JP2010535150A JP5144766B2 JP 5144766 B2 JP5144766 B2 JP 5144766B2 JP 2010535150 A JP2010535150 A JP 2010535150A JP 2010535150 A JP2010535150 A JP 2010535150A JP 5144766 B2 JP5144766 B2 JP 5144766B2
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alloy
target
sputtering target
sintered
raw material
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JPWO2011013471A1 (ja
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正克 生澤
英生 高見
友哉 田村
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/0425Copper-based alloys
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C28/00Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C30/00Alloys containing less than 50% by weight of each constituent
    • C22C30/02Alloys containing less than 50% by weight of each constituent containing copper
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
JP2010535150A 2009-07-27 2010-06-29 Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法 Active JP5144766B2 (ja)

Priority Applications (1)

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JP2010535150A JP5144766B2 (ja) 2009-07-27 2010-06-29 Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009174253 2009-07-27
JP2009174253 2009-07-27
PCT/JP2010/061049 WO2011013471A1 (ja) 2009-07-27 2010-06-29 Cu-Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法
JP2010535150A JP5144766B2 (ja) 2009-07-27 2010-06-29 Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法

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JPWO2011013471A1 JPWO2011013471A1 (ja) 2013-01-07
JP5144766B2 true JP5144766B2 (ja) 2013-02-13

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JP2010535150A Active JP5144766B2 (ja) 2009-07-27 2010-06-29 Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法

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JP (1) JP5144766B2 (ko)
KR (1) KR101249566B1 (ko)
CN (1) CN102046836B (ko)
TW (1) TWI458848B (ko)
WO (1) WO2011013471A1 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5488377B2 (ja) * 2010-09-29 2014-05-14 住友金属鉱山株式会社 Cu−Ga合金スパッタリングターゲットの製造方法及びCu−Ga合金スパッタリングターゲット
JP5617493B2 (ja) * 2010-09-29 2014-11-05 住友金属鉱山株式会社 Cu−Ga合金スパッタリングターゲット及びCu−Ga合金スパッタリングターゲットの製造方法
JP5617723B2 (ja) * 2011-03-25 2014-11-05 住友金属鉱山株式会社 Cu−Ga合金スパッタリングターゲット
JP5725610B2 (ja) * 2011-04-29 2015-05-27 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
US20140001039A1 (en) * 2011-08-29 2014-01-02 Jx Nippon Mining & Metals Corporation Cu-Ga Alloy Sputtering Target and Method for Producing Same
JP2013142175A (ja) * 2012-01-11 2013-07-22 Sumitomo Metal Mining Co Ltd Cu−Ga合金スパッタリングターゲット及びその製造方法
JP5672252B2 (ja) * 2012-01-31 2015-02-18 新日鐵住金株式会社 Cu−Gaスパッタリングターゲット及びその製造方法
JP5750393B2 (ja) * 2012-03-28 2015-07-22 Jx日鉱日石金属株式会社 Cu−Ga合金スパッタリングターゲット及びその製造方法
CN103421976B (zh) * 2012-05-22 2017-11-21 山阳特殊制钢株式会社 氧含量低的Cu‑Ga系合金粉末、Cu‑Ga系合金靶材、以及靶材的制造方法
CN102677013A (zh) * 2012-05-25 2012-09-19 大连交通大学 一种Cu(In1-xGax)Se2薄膜及其制备和应用
JP2012246574A (ja) * 2012-09-18 2012-12-13 Mitsubishi Materials Corp スパッタリングターゲット及びその製造方法
JP5594618B1 (ja) * 2013-02-25 2014-09-24 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5743119B1 (ja) 2014-01-28 2015-07-01 三菱マテリアル株式会社 Cu−Ga合金スパッタリングターゲット及びその製造方法
JP6016849B2 (ja) * 2014-06-25 2016-10-26 Jx金属株式会社 Cu−Ga合金スパッタリングターゲット
JP5795420B2 (ja) * 2014-10-29 2015-10-14 山陽特殊製鋼株式会社 酸素含有量が低いCu−Ga系合金スパッタリングターゲット材
JP6583019B2 (ja) 2015-03-30 2019-10-02 三菱マテリアル株式会社 Cu−Ga合金スパッタリングターゲット、及び、Cu−Ga合金スパッタリングターゲットの製造方法
CN107321998B (zh) * 2017-07-24 2020-01-07 先导薄膜材料(广东)有限公司 铜镓合金粉的制备方法
JP2019183277A (ja) * 2018-04-04 2019-10-24 三菱マテリアル株式会社 Cu−Ga合金スパッタリングターゲット
WO2020116668A1 (ko) * 2018-12-03 2020-06-11 엘티메탈 주식회사 은 나노 입자의 제조방법, 및 이에 의해 제조된 은 나노 입자를 포함하는 전기 접점재료

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11106905A (ja) * 1997-08-08 1999-04-20 Hitachi Metals Ltd Ni−Al系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体
JP2000073163A (ja) * 1998-08-28 2000-03-07 Vacuum Metallurgical Co Ltd Cu−Ga合金スパッタリングターゲット及びその製造方法
JP2003328118A (ja) * 2003-03-31 2003-11-19 Hitachi Metals Ltd Ru−Al金属間化合物ターゲットの製造方法、Ru−Al金属間化合物ターゲットおよび磁気記録媒体
JP2008138232A (ja) * 2006-11-30 2008-06-19 Mitsubishi Materials Corp 高Ga含有Cu−Ga二元系合金スパッタリングターゲットおよびその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6119749A (ja) * 1984-07-06 1986-01-28 Hitachi Ltd 分光反射率可変合金及び記録材料
JPH11260724A (ja) * 1998-03-16 1999-09-24 Matsushita Electric Ind Co Ltd 化合物半導体薄膜の製造方法および製造装置
JP4501250B2 (ja) * 2000-06-19 2010-07-14 日鉱金属株式会社 耐脆化性に優れたゲート酸化膜形成用シリサイドターゲット
WO2003064722A1 (fr) * 2002-01-30 2003-08-07 Nikko Materials Company, Limited Cible de pulverisation d'alliage de cuivre et procede de fabrication de cette cible
JP2004162109A (ja) * 2002-11-12 2004-06-10 Nikko Materials Co Ltd スパッタリングターゲット及び同製造用粉末
KR100812943B1 (ko) * 2003-08-05 2008-03-11 닛코킨조쿠 가부시키가이샤 스퍼터링 타겟트 및 그 제조방법
CN100418235C (zh) * 2005-06-03 2008-09-10 清华大学 用于铜铟镓硒薄膜太阳能电池的铜镓合金靶的制备方法
JP2009528680A (ja) * 2006-02-23 2009-08-06 デューレン、イェルーン カー.イェー. ファン カルコゲン層の高スループット印刷および金属間化合物材料の使用
DE102006026005A1 (de) * 2006-06-01 2007-12-06 W.C. Heraeus Gmbh Kaltgepresste Sputtertargets
JP5182494B2 (ja) * 2008-05-30 2013-04-17 三菱マテリアル株式会社 カルコパイライト型半導体膜成膜用スパッタリングターゲットの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11106905A (ja) * 1997-08-08 1999-04-20 Hitachi Metals Ltd Ni−Al系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体
JP2000073163A (ja) * 1998-08-28 2000-03-07 Vacuum Metallurgical Co Ltd Cu−Ga合金スパッタリングターゲット及びその製造方法
JP2003328118A (ja) * 2003-03-31 2003-11-19 Hitachi Metals Ltd Ru−Al金属間化合物ターゲットの製造方法、Ru−Al金属間化合物ターゲットおよび磁気記録媒体
JP2008138232A (ja) * 2006-11-30 2008-06-19 Mitsubishi Materials Corp 高Ga含有Cu−Ga二元系合金スパッタリングターゲットおよびその製造方法

Also Published As

Publication number Publication date
WO2011013471A1 (ja) 2011-02-03
KR101249566B1 (ko) 2013-04-01
CN102046836B (zh) 2012-10-03
CN102046836A (zh) 2011-05-04
TWI458848B (zh) 2014-11-01
JPWO2011013471A1 (ja) 2013-01-07
KR20110014977A (ko) 2011-02-14
TW201118190A (en) 2011-06-01

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