JP5144766B2 - Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法 - Google Patents
Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法 Download PDFInfo
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- JP5144766B2 JP5144766B2 JP2010535150A JP2010535150A JP5144766B2 JP 5144766 B2 JP5144766 B2 JP 5144766B2 JP 2010535150 A JP2010535150 A JP 2010535150A JP 2010535150 A JP2010535150 A JP 2010535150A JP 5144766 B2 JP5144766 B2 JP 5144766B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 238000005477 sputtering target Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 claims description 48
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 41
- 239000000843 powder Substances 0.000 claims description 34
- 239000002994 raw material Substances 0.000 claims description 34
- 239000000203 mixture Substances 0.000 claims description 29
- 238000005452 bending Methods 0.000 claims description 24
- 238000001816 cooling Methods 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 14
- 238000007731 hot pressing Methods 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 238000002441 X-ray diffraction Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000009692 water atomization Methods 0.000 claims description 6
- 238000010298 pulverizing process Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000009689 gas atomisation Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 description 29
- 239000002245 particle Substances 0.000 description 18
- 238000005336 cracking Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 11
- 238000005204 segregation Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000011978 dissolution method Methods 0.000 description 3
- 238000005242 forging Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910017566 Cu-Mn Inorganic materials 0.000 description 1
- 229910017871 Cu—Mn Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
- C22C30/02—Alloys containing less than 50% by weight of each constituent containing copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010535150A JP5144766B2 (ja) | 2009-07-27 | 2010-06-29 | Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009174253 | 2009-07-27 | ||
JP2009174253 | 2009-07-27 | ||
PCT/JP2010/061049 WO2011013471A1 (ja) | 2009-07-27 | 2010-06-29 | Cu-Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法 |
JP2010535150A JP5144766B2 (ja) | 2009-07-27 | 2010-06-29 | Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011013471A1 JPWO2011013471A1 (ja) | 2013-01-07 |
JP5144766B2 true JP5144766B2 (ja) | 2013-02-13 |
Family
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Family Applications (1)
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JP2010535150A Active JP5144766B2 (ja) | 2009-07-27 | 2010-06-29 | Cu−Ga焼結体スパッタリングターゲット及び同ターゲットの製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5144766B2 (ko) |
KR (1) | KR101249566B1 (ko) |
CN (1) | CN102046836B (ko) |
TW (1) | TWI458848B (ko) |
WO (1) | WO2011013471A1 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5488377B2 (ja) * | 2010-09-29 | 2014-05-14 | 住友金属鉱山株式会社 | Cu−Ga合金スパッタリングターゲットの製造方法及びCu−Ga合金スパッタリングターゲット |
JP5617493B2 (ja) * | 2010-09-29 | 2014-11-05 | 住友金属鉱山株式会社 | Cu−Ga合金スパッタリングターゲット及びCu−Ga合金スパッタリングターゲットの製造方法 |
JP5617723B2 (ja) * | 2011-03-25 | 2014-11-05 | 住友金属鉱山株式会社 | Cu−Ga合金スパッタリングターゲット |
JP5725610B2 (ja) * | 2011-04-29 | 2015-05-27 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
US20140001039A1 (en) * | 2011-08-29 | 2014-01-02 | Jx Nippon Mining & Metals Corporation | Cu-Ga Alloy Sputtering Target and Method for Producing Same |
JP2013142175A (ja) * | 2012-01-11 | 2013-07-22 | Sumitomo Metal Mining Co Ltd | Cu−Ga合金スパッタリングターゲット及びその製造方法 |
JP5672252B2 (ja) * | 2012-01-31 | 2015-02-18 | 新日鐵住金株式会社 | Cu−Gaスパッタリングターゲット及びその製造方法 |
JP5750393B2 (ja) * | 2012-03-28 | 2015-07-22 | Jx日鉱日石金属株式会社 | Cu−Ga合金スパッタリングターゲット及びその製造方法 |
CN103421976B (zh) * | 2012-05-22 | 2017-11-21 | 山阳特殊制钢株式会社 | 氧含量低的Cu‑Ga系合金粉末、Cu‑Ga系合金靶材、以及靶材的制造方法 |
CN102677013A (zh) * | 2012-05-25 | 2012-09-19 | 大连交通大学 | 一种Cu(In1-xGax)Se2薄膜及其制备和应用 |
JP2012246574A (ja) * | 2012-09-18 | 2012-12-13 | Mitsubishi Materials Corp | スパッタリングターゲット及びその製造方法 |
JP5594618B1 (ja) * | 2013-02-25 | 2014-09-24 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
JP5743119B1 (ja) | 2014-01-28 | 2015-07-01 | 三菱マテリアル株式会社 | Cu−Ga合金スパッタリングターゲット及びその製造方法 |
JP6016849B2 (ja) * | 2014-06-25 | 2016-10-26 | Jx金属株式会社 | Cu−Ga合金スパッタリングターゲット |
JP5795420B2 (ja) * | 2014-10-29 | 2015-10-14 | 山陽特殊製鋼株式会社 | 酸素含有量が低いCu−Ga系合金スパッタリングターゲット材 |
JP6583019B2 (ja) | 2015-03-30 | 2019-10-02 | 三菱マテリアル株式会社 | Cu−Ga合金スパッタリングターゲット、及び、Cu−Ga合金スパッタリングターゲットの製造方法 |
CN107321998B (zh) * | 2017-07-24 | 2020-01-07 | 先导薄膜材料(广东)有限公司 | 铜镓合金粉的制备方法 |
JP2019183277A (ja) * | 2018-04-04 | 2019-10-24 | 三菱マテリアル株式会社 | Cu−Ga合金スパッタリングターゲット |
WO2020116668A1 (ko) * | 2018-12-03 | 2020-06-11 | 엘티메탈 주식회사 | 은 나노 입자의 제조방법, 및 이에 의해 제조된 은 나노 입자를 포함하는 전기 접점재료 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11106905A (ja) * | 1997-08-08 | 1999-04-20 | Hitachi Metals Ltd | Ni−Al系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体 |
JP2000073163A (ja) * | 1998-08-28 | 2000-03-07 | Vacuum Metallurgical Co Ltd | Cu−Ga合金スパッタリングターゲット及びその製造方法 |
JP2003328118A (ja) * | 2003-03-31 | 2003-11-19 | Hitachi Metals Ltd | Ru−Al金属間化合物ターゲットの製造方法、Ru−Al金属間化合物ターゲットおよび磁気記録媒体 |
JP2008138232A (ja) * | 2006-11-30 | 2008-06-19 | Mitsubishi Materials Corp | 高Ga含有Cu−Ga二元系合金スパッタリングターゲットおよびその製造方法 |
Family Cites Families (10)
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JPS6119749A (ja) * | 1984-07-06 | 1986-01-28 | Hitachi Ltd | 分光反射率可変合金及び記録材料 |
JPH11260724A (ja) * | 1998-03-16 | 1999-09-24 | Matsushita Electric Ind Co Ltd | 化合物半導体薄膜の製造方法および製造装置 |
JP4501250B2 (ja) * | 2000-06-19 | 2010-07-14 | 日鉱金属株式会社 | 耐脆化性に優れたゲート酸化膜形成用シリサイドターゲット |
WO2003064722A1 (fr) * | 2002-01-30 | 2003-08-07 | Nikko Materials Company, Limited | Cible de pulverisation d'alliage de cuivre et procede de fabrication de cette cible |
JP2004162109A (ja) * | 2002-11-12 | 2004-06-10 | Nikko Materials Co Ltd | スパッタリングターゲット及び同製造用粉末 |
KR100812943B1 (ko) * | 2003-08-05 | 2008-03-11 | 닛코킨조쿠 가부시키가이샤 | 스퍼터링 타겟트 및 그 제조방법 |
CN100418235C (zh) * | 2005-06-03 | 2008-09-10 | 清华大学 | 用于铜铟镓硒薄膜太阳能电池的铜镓合金靶的制备方法 |
JP2009528680A (ja) * | 2006-02-23 | 2009-08-06 | デューレン、イェルーン カー.イェー. ファン | カルコゲン層の高スループット印刷および金属間化合物材料の使用 |
DE102006026005A1 (de) * | 2006-06-01 | 2007-12-06 | W.C. Heraeus Gmbh | Kaltgepresste Sputtertargets |
JP5182494B2 (ja) * | 2008-05-30 | 2013-04-17 | 三菱マテリアル株式会社 | カルコパイライト型半導体膜成膜用スパッタリングターゲットの製造方法 |
-
2010
- 2010-06-29 WO PCT/JP2010/061049 patent/WO2011013471A1/ja active Application Filing
- 2010-06-29 CN CN201080001562.8A patent/CN102046836B/zh active Active
- 2010-06-29 JP JP2010535150A patent/JP5144766B2/ja active Active
- 2010-06-29 KR KR1020107023228A patent/KR101249566B1/ko active IP Right Grant
- 2010-07-23 TW TW099124312A patent/TWI458848B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11106905A (ja) * | 1997-08-08 | 1999-04-20 | Hitachi Metals Ltd | Ni−Al系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体 |
JP2000073163A (ja) * | 1998-08-28 | 2000-03-07 | Vacuum Metallurgical Co Ltd | Cu−Ga合金スパッタリングターゲット及びその製造方法 |
JP2003328118A (ja) * | 2003-03-31 | 2003-11-19 | Hitachi Metals Ltd | Ru−Al金属間化合物ターゲットの製造方法、Ru−Al金属間化合物ターゲットおよび磁気記録媒体 |
JP2008138232A (ja) * | 2006-11-30 | 2008-06-19 | Mitsubishi Materials Corp | 高Ga含有Cu−Ga二元系合金スパッタリングターゲットおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2011013471A1 (ja) | 2011-02-03 |
KR101249566B1 (ko) | 2013-04-01 |
CN102046836B (zh) | 2012-10-03 |
CN102046836A (zh) | 2011-05-04 |
TWI458848B (zh) | 2014-11-01 |
JPWO2011013471A1 (ja) | 2013-01-07 |
KR20110014977A (ko) | 2011-02-14 |
TW201118190A (en) | 2011-06-01 |
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