JP5142943B2 - 放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム - Google Patents

放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム Download PDF

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Publication number
JP5142943B2
JP5142943B2 JP2008273193A JP2008273193A JP5142943B2 JP 5142943 B2 JP5142943 B2 JP 5142943B2 JP 2008273193 A JP2008273193 A JP 2008273193A JP 2008273193 A JP2008273193 A JP 2008273193A JP 5142943 B2 JP5142943 B2 JP 5142943B2
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radiation detection
layer
detection apparatus
electromagnetic shield
scintillator
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Japanese (ja)
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JP2009133837A (ja
JP2009133837A5 (enExample
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孝昌 石井
千織 望月
実 渡辺
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Canon Inc
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Canon Inc
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Priority to JP2008273193A priority Critical patent/JP5142943B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to EP08848253A priority patent/EP2223339A2/en
Priority to CN2008801140098A priority patent/CN101842901B/zh
Priority to US12/676,352 priority patent/US8440977B2/en
Priority to PCT/JP2008/070370 priority patent/WO2009060968A2/en
Priority to KR1020107011741A priority patent/KR101135797B1/ko
Publication of JP2009133837A publication Critical patent/JP2009133837A/ja
Publication of JP2009133837A5 publication Critical patent/JP2009133837A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members

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  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
JP2008273193A 2007-11-05 2008-10-23 放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム Active JP5142943B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008273193A JP5142943B2 (ja) 2007-11-05 2008-10-23 放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム
CN2008801140098A CN101842901B (zh) 2007-11-05 2008-11-04 放射线检测装置的制造方法、放射线检测装置和放射线成像装置
US12/676,352 US8440977B2 (en) 2007-11-05 2008-11-04 Manufacturing method of radiation detecting apparatus, and radiation detecting apparatus and radiation imaging system
PCT/JP2008/070370 WO2009060968A2 (en) 2007-11-05 2008-11-04 Manufacturing method of radiation detecting apparatus, and radiation detecting apparatus and radiation imaging system
EP08848253A EP2223339A2 (en) 2007-11-05 2008-11-04 Manufacturing method of radiation detecting apparatus, and radiation detecting apparatus and radiation imaging system
KR1020107011741A KR101135797B1 (ko) 2007-11-05 2008-11-04 방사선 검출 장치의 제조 방법, 방사선 검출 장치 및 방사선 촬상 시스템

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007287402 2007-11-05
JP2007287402 2007-11-05
JP2008273193A JP5142943B2 (ja) 2007-11-05 2008-10-23 放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム

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JP2009133837A JP2009133837A (ja) 2009-06-18
JP2009133837A5 JP2009133837A5 (enExample) 2011-12-08
JP5142943B2 true JP5142943B2 (ja) 2013-02-13

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US (1) US8440977B2 (enExample)
EP (1) EP2223339A2 (enExample)
JP (1) JP5142943B2 (enExample)
KR (1) KR101135797B1 (enExample)
CN (1) CN101842901B (enExample)
WO (1) WO2009060968A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12158551B2 (en) 2020-12-11 2024-12-03 Canon Kabushiki Kaisha Radiation imaging apparatus and manufacturing method of same

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010085266A (ja) * 2008-09-30 2010-04-15 Fujifilm Corp 放射線検出装置及び放射線撮影システム
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
US9075150B2 (en) 2009-07-30 2015-07-07 Carestream Health, Inc. Radiographic detector formed on scintillator
KR20120051727A (ko) 2009-07-31 2012-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 디바이스 및 그 형성 방법
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5672234B2 (ja) * 2009-10-05 2015-02-18 コニカミノルタ株式会社 放射線画像検出カセッテ
SG10201500220TA (en) 2010-01-15 2015-03-30 Semiconductor Energy Lab Semiconductor device and method for driving the same
WO2011086829A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
JP5645500B2 (ja) 2010-06-23 2014-12-24 キヤノン株式会社 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法
JP2012256819A (ja) * 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP5485860B2 (ja) * 2010-11-18 2014-05-07 富士フイルム株式会社 放射線画像撮影装置
JP5693174B2 (ja) * 2010-11-22 2015-04-01 キヤノン株式会社 放射線検出装置及び放射線検出システム
JP5460572B2 (ja) * 2010-12-27 2014-04-02 富士フイルム株式会社 放射線画像検出装置及びその製造方法
JP2012145537A (ja) * 2011-01-14 2012-08-02 Canon Inc 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法
JP5557769B2 (ja) * 2011-02-14 2014-07-23 富士フイルム株式会社 放射線画像検出装置及びその製造方法
JP2012173128A (ja) * 2011-02-21 2012-09-10 Fujifilm Corp 放射線画像検出装置及び放射線撮影装置
JP5557773B2 (ja) 2011-02-24 2014-07-23 富士フイルム株式会社 放射線画像検出装置及び放射線撮影用カセッテ並びに放射線撮影装置
JP5677136B2 (ja) * 2011-02-24 2015-02-25 富士フイルム株式会社 放射線画像検出装置及び放射線撮影用カセッテ
JP2012177624A (ja) * 2011-02-25 2012-09-13 Fujifilm Corp 放射線画像検出装置及び放射線画像検出装置の製造方法
JP2012189385A (ja) 2011-03-09 2012-10-04 Fujifilm Corp 放射線画像検出装置の保守方法
JP2012195509A (ja) 2011-03-17 2012-10-11 Canon Inc 半導体装置及びその製造方法
JP5874201B2 (ja) * 2011-05-30 2016-03-02 ソニー株式会社 放射線撮像装置および放射線撮像表示システム
JP5905672B2 (ja) * 2011-06-28 2016-04-20 株式会社東芝 放射線検出器及びその製造方法
CN102262313B (zh) * 2011-08-02 2014-03-05 深超光电（深圳）有限公司 一种液晶显示装置及其制造方法
JP5657614B2 (ja) 2011-08-26 2015-01-21 富士フイルム株式会社 放射線検出器および放射線画像撮影装置
WO2013115841A1 (en) * 2012-01-30 2013-08-08 Jun Seung Ik Radiation detecting panel
JP2013174465A (ja) * 2012-02-23 2013-09-05 Canon Inc 放射線検出装置
JP2016136160A (ja) * 2012-09-27 2016-07-28 富士フイルム株式会社 放射線画像検出装置
FR2996954B1 (fr) * 2012-10-15 2014-12-05 Commissariat Energie Atomique Detecteur courbe de particules gazeux
TWI559064B (zh) 2012-10-19 2016-11-21 Japan Display Inc Display device
KR101420250B1 (ko) * 2012-11-26 2014-07-17 한국전기연구원 플렉서블 엑스레이 디텍터의 제조 방법 및 플렉서블 엑스레이 디텍터를 갖는 방사선 검출 장치
US9935152B2 (en) 2012-12-27 2018-04-03 General Electric Company X-ray detector having improved noise performance
US9917133B2 (en) 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
WO2015138329A1 (en) * 2014-03-13 2015-09-17 General Electric Company Curved digital x-ray detector for weld inspection
JP6714332B2 (ja) * 2014-12-22 2020-06-24 キヤノン株式会社 放射線検出装置、及び放射線撮像システム
EP3038349B1 (en) * 2014-12-22 2018-03-14 Canon Kabushiki Kaisha Radiation detection apparatus and radiation imaging system
KR101735479B1 (ko) * 2015-06-25 2017-05-16 한국과학기술원 플렉서블 반도체 방사선 검출기의 제조방법, 이를 이용한 플렉서블 반도체 방사선 검출기 및 이를 포함하는 방사선 영상장치
CN107300712B (zh) * 2016-04-14 2021-08-17 中国辐射防护研究院 一种可同时测量β、γ能谱的层叠型闪烁体探测器的测量方法
KR101770282B1 (ko) * 2016-04-26 2017-08-23 서울대학교병원 실시간 입체시를 위한 x선 투시 장치
JP2017203672A (ja) * 2016-05-11 2017-11-16 東芝電子管デバイス株式会社 放射線検出器
CN106291654B (zh) * 2016-08-31 2018-04-06 京东方科技集团股份有限公司 辐射检测器及其制造方法
WO2018123905A1 (ja) * 2016-12-27 2018-07-05 シャープ株式会社 撮像パネル及びその製造方法
CN107507844A (zh) * 2017-06-06 2017-12-22 上海奕瑞光电子科技有限公司 柔性x射线成像传感器及其制备方法
CN107742628A (zh) * 2017-09-12 2018-02-27 奕瑞影像科技（太仓）有限公司 柔性闪烁屏、放射线图像传感器及其制备方法
US10353083B2 (en) * 2017-09-12 2019-07-16 Palo Alto Research Center Incorporated Monolithic digital x-ray detector stack with energy resolution
CN108010928A (zh) * 2017-11-02 2018-05-08 上海奕瑞光电子科技股份有限公司 一种柔性x射线传感器闪烁体层的直接生长方法
JP6880309B2 (ja) 2018-03-19 2021-06-02 富士フイルム株式会社 放射線検出器、放射線画像撮影装置、及び製造方法
JP6861888B2 (ja) * 2018-03-26 2021-04-21 富士フイルム株式会社 放射線画像撮影装置
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JP6861321B2 (ja) 2018-03-26 2021-04-21 富士フイルム株式会社 放射線画像撮影装置
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TWI833894B (zh) 2019-02-08 2024-03-01 日商富士軟片股份有限公司 放射線檢測器的製造方法及放射線圖像攝影裝置
JP7337663B2 (ja) * 2019-10-30 2023-09-04 キヤノン株式会社 放射線検出装置の製造方法
EP3835829A1 (en) * 2019-12-09 2021-06-16 Koninklijke Philips N.V. X-ray detector
CN114902079B (zh) * 2019-12-27 2025-09-05 富士胶片株式会社 放射线图像摄影装置的制造方法
CN113725309B (zh) * 2020-05-22 2024-07-30 睿生光电股份有限公司 X射线装置及其制造方法
TWI734489B (zh) 2020-05-22 2021-07-21 睿生光電股份有限公司 X射線裝置及其製造方法
CN114023845B (zh) * 2020-07-17 2024-08-20 睿生光电股份有限公司 X射线装置及其制造方法
US11843022B2 (en) * 2020-12-03 2023-12-12 Sharp Kabushiki Kaisha X-ray imaging panel and method of manufacturing X-ray imaging panel
US11916094B2 (en) * 2021-08-02 2024-02-27 Sharp Display Technology Corporation Photoelectric conversion panel and method for manufacturing photoelectric conversion panel

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3957803B2 (ja) * 1996-02-22 2007-08-15 キヤノン株式会社 光電変換装置
EP1655633A3 (en) 1996-08-27 2006-06-21 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device
US6127199A (en) * 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
FR2758630B1 (fr) * 1997-01-21 1999-04-09 Thomson Tubes Electroniques Procede de scellement etanche d'un detecteur de rayonnement a l'etat solide et detecteur obtenu par ce procede
JP3869952B2 (ja) * 1998-09-21 2007-01-17 キヤノン株式会社 光電変換装置とそれを用いたｘ線撮像装置
JP4234304B2 (ja) * 2000-05-19 2009-03-04 浜松ホトニクス株式会社 放射線検出器
JP2002148343A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線検出器及びそれを用いた放射線撮像システム
US6847039B2 (en) * 2001-03-28 2005-01-25 Canon Kabushiki Kaisha Photodetecting device, radiation detecting device, and radiation imaging system
US6765187B2 (en) * 2001-06-27 2004-07-20 Canon Kabushiki Kaisha Imaging apparatus
US7351300B2 (en) * 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US7034309B2 (en) * 2001-11-13 2006-04-25 Canon Kabushiki Kaisha Radiation detecting apparatus and method of driving the same
US7214945B2 (en) * 2002-06-11 2007-05-08 Canon Kabushiki Kaisha Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system
US7078702B2 (en) * 2002-07-25 2006-07-18 General Electric Company Imager
EP1420453B1 (en) * 2002-11-13 2011-03-09 Canon Kabushiki Kaisha Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system
JP4522044B2 (ja) * 2002-11-15 2010-08-11 キヤノン株式会社 放射線撮影装置
JP4451843B2 (ja) * 2003-03-07 2010-04-14 浜松ホトニクス株式会社 シンチレータパネルの製造方法及び放射線イメージセンサの製造方法
US7193218B2 (en) * 2003-10-29 2007-03-20 Canon Kabushiki Kaisha Radiation detection device, method of producing the same, and radiation image pick-up system
JP2005172511A (ja) * 2003-12-09 2005-06-30 Canon Inc 放射線検出装置、その製造方法、および放射線撮像システム
JP2005201807A (ja) * 2004-01-16 2005-07-28 Fuji Photo Film Co Ltd 放射線画像記録読取装置および画像表示装置並びにそれらの製造方法
US7514686B2 (en) * 2004-08-10 2009-04-07 Canon Kabushiki Kaisha Radiation detecting apparatus, scintillator panel, their manufacturing method and radiation detecting system
WO2006039494A2 (en) * 2004-09-30 2006-04-13 Stanford University Semiconductor crystal high resolution imager
JP5207583B2 (ja) * 2005-07-25 2013-06-12 キヤノン株式会社 放射線検出装置および放射線検出システム
US7696481B2 (en) * 2005-11-22 2010-04-13 General Electric Company Multi-layered detector system for high resolution computed tomography
JP4875349B2 (ja) 2005-11-24 2012-02-15 キヤノン株式会社 放射線検出装置、放射線撮像システム、および検出装置
DE102005056048B4 (de) * 2005-11-24 2012-08-09 Siemens Ag Flachbilddetektor
JP4920994B2 (ja) * 2006-03-02 2012-04-18 キヤノン株式会社 シンチレータパネル、放射線検出装置及び放射線検出システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12158551B2 (en) 2020-12-11 2024-12-03 Canon Kabushiki Kaisha Radiation imaging apparatus and manufacturing method of same

Also Published As

Publication number Publication date
EP2223339A2 (en) 2010-09-01
JP2009133837A (ja) 2009-06-18
KR20100072363A (ko) 2010-06-30
KR101135797B1 (ko) 2012-04-16
CN101842901B (zh) 2012-03-28
WO2009060968A2 (en) 2009-05-14
US20100193691A1 (en) 2010-08-05
WO2009060968A3 (en) 2009-12-23
CN101842901A (zh) 2010-09-22
US8440977B2 (en) 2013-05-14

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