JP2013174465A - 放射線検出装置 - Google Patents
放射線検出装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
Abstract
【解決手段】第1面及び第2面を有し、第1面に画素アレイと当該画素アレイに接続された接続端子とが配置されたセンサ基板と、センサ基板の第1面側に配置され、センサ基板の第2面側から入射した放射線を画素アレイが検出可能な波長の光に変換するシンチレータ層と、画素アレイの動作を制御するための回路を有し、シンチレータ層のセンサ基板とは反対側に配置された回路基板と、接続端子と回路基板とを接続するための接続部とを備え、シンチレータ層は画素アレイを覆う一方で、接続端子を露出されるように配置され、回路基板及び接続部はセンサ基板の第1面の外縁からはみ出さない位置に配置されることを特徴とする放射線検出装置が提供される。
【選択図】図1
Description
Claims (7)
- 第1面及び第2面を有し、前記第1面に画素アレイと当該画素アレイに接続された接続端子とが配置されたセンサ基板と、
前記センサ基板の前記第1面側に配置され、前記センサ基板の前記第2面側から入射した放射線を前記画素アレイが検出可能な波長の光に変換するシンチレータ層と、
前記画素アレイの動作を制御するための回路を有し、前記シンチレータ層の前記センサ基板とは反対側に配置された回路基板と、
前記接続端子と前記回路基板とを接続するための接続部とを備え、
前記シンチレータ層は前記画素アレイを覆う一方で、前記接続端子を露出されるように配置され、
前記回路基板及び前記接続部は前記センサ基板の前記第1面の外縁からはみ出さない位置に配置される
ことを特徴とする放射線検出装置。 - 前記回路基板の有する回路が発生する電磁波を遮蔽する電磁シールド層を更に備え、
前記電磁シールド層は前記回路基板と前記シンチレータ層との間に配置されることを特徴とする請求項1に記載の放射線検出装置。 - 前記電磁シールド層は前記画素アレイよりも大きいことを特徴とする請求項2に記載の放射線検出装置。
- 前記電磁シールド層は前記センサ基板の前記第1面よりも大きく、
前記電磁シールド層には前記接続部を通す開口が形成されていることを特徴とする請求項2に記載の放射線検出装置。 - 前記シンチレータ層は前記電磁シールド層に蒸着されていることを特徴とする請求項3又は4に記載の放射線検出装置。
- 前記回路基板の有する回路で発生した熱が前記シンチレータ層に伝達するように、前記回路基板は直接に又は接着層を介して前記電磁シールド層に接していることを特徴とする請求項5に記載の放射線検出装置。
- 前記センサ基板、前記シンチレータ層、前記回路基板及び前記接続部を収容するカバーを更に備え、
前記センサ基板の前記第2面が直接に又は接着層を介して前記カバーに接していることを特徴とする請求項1乃至6の何れか1項に記載の放射線検出装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012037803A JP2013174465A (ja) | 2012-02-23 | 2012-02-23 | 放射線検出装置 |
US13/762,464 US20130221198A1 (en) | 2012-02-23 | 2013-02-08 | Radiation detection apparatus |
CN201310055498.7A CN103293548B (zh) | 2012-02-23 | 2013-02-21 | 放射线检测设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012037803A JP2013174465A (ja) | 2012-02-23 | 2012-02-23 | 放射線検出装置 |
Publications (1)
Publication Number | Publication Date |
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JP2013174465A true JP2013174465A (ja) | 2013-09-05 |
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ID=49001809
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Application Number | Title | Priority Date | Filing Date |
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JP2012037803A Pending JP2013174465A (ja) | 2012-02-23 | 2012-02-23 | 放射線検出装置 |
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---|---|
US (1) | US20130221198A1 (ja) |
JP (1) | JP2013174465A (ja) |
CN (1) | CN103293548B (ja) |
Cited By (1)
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WO2015093134A1 (ja) * | 2013-12-18 | 2015-06-25 | キヤノン株式会社 | 放射線検出装置及び放射線検出システム |
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JP5997512B2 (ja) | 2012-06-20 | 2016-09-28 | キヤノン株式会社 | 放射線検出装置及び撮像システム |
JP6092568B2 (ja) | 2012-10-11 | 2017-03-08 | キヤノン株式会社 | 放射線検出装置及び放射線検出システム |
JP6200173B2 (ja) | 2013-03-21 | 2017-09-20 | キヤノン株式会社 | 放射線検出装置及び放射線検出システム |
JP6478538B2 (ja) | 2014-09-10 | 2019-03-06 | キヤノン株式会社 | 放射線撮像装置および放射線撮像システム |
JP6573377B2 (ja) | 2015-07-08 | 2019-09-11 | キヤノン株式会社 | 放射線撮像装置、その制御方法及びプログラム |
JP6573378B2 (ja) | 2015-07-10 | 2019-09-11 | キヤノン株式会社 | 放射線撮像装置、その制御方法及びプログラム |
US10506186B2 (en) * | 2015-11-12 | 2019-12-10 | Sony Corporation | Solid-state imaging device and solid-state imaging apparatus |
JP6663210B2 (ja) | 2015-12-01 | 2020-03-11 | キヤノン株式会社 | 放射線撮像装置及びその制御方法 |
JP6706963B2 (ja) | 2016-04-18 | 2020-06-10 | キヤノン株式会社 | 放射線撮像装置、放射線撮像システム、及び、放射線撮像装置の制御方法 |
JP6778118B2 (ja) | 2017-01-13 | 2020-10-28 | キヤノン株式会社 | 放射線撮像装置及び放射線撮像システム |
CN108966641B (zh) * | 2017-03-22 | 2022-02-22 | 富士胶片株式会社 | 放射线检测器以及放射线图像摄影装置 |
JP6877289B2 (ja) | 2017-07-31 | 2021-05-26 | キヤノン株式会社 | 放射線検出装置、放射線検出システム、及び放射線出装置の製造方法 |
JP7030478B2 (ja) | 2017-11-09 | 2022-03-07 | キヤノン株式会社 | 撮影台および放射線撮影システム |
JP6659182B2 (ja) | 2018-07-23 | 2020-03-04 | キヤノン株式会社 | 放射線撮像装置、その製造方法及び放射線撮像システム |
CN114788001A (zh) * | 2022-01-04 | 2022-07-22 | 苏州帧观智造科技有限公司 | 多层图像传感器 |
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2012
- 2012-02-23 JP JP2012037803A patent/JP2013174465A/ja active Pending
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2013
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- 2013-02-21 CN CN201310055498.7A patent/CN103293548B/zh active Active
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US20130221198A1 (en) | 2013-08-29 |
CN103293548B (zh) | 2015-11-18 |
CN103293548A (zh) | 2013-09-11 |
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