JP5645500B2 - 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法 - Google Patents
放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法 Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Description
したがって、剥離の容易性、すなわち交換のしやすさと画質とを両立することができる。
2 基台
3 第1の加熱剥離型粘着層
4 撮像素子
5 第2の加熱剥離型粘着層
6 シンチレータ
7 基板
8 シンチレータ層
9 保護層
10 配線基板
11 樹脂
Claims (15)
- 基台と、撮像素子と、シンチレータと、を有し、
前記基台と前記撮像素子との間に配置され、前記基台と前記撮像素子とを固定する第1の熱膨張性微小球を含む第1の加熱剥離型粘着層と、
前記撮像素子と前記シンチレータとの間に配置され、前記撮像素子と前記シンチレータとを固定する第2の熱膨張性微小球を含む第2の加熱剥離型粘着層と、を有し、
前記第1の加熱剥離型粘着層は、第1の熱膨張性微小球を含み、前記第2の加熱剥離型粘着層は、第2の熱膨張性微小球を含み、前記第1の熱膨張性微小球と前記第2の熱膨張性微小球の発泡開始温度は異なることを特徴とする放射線撮像装置。 - 前記第1の熱膨張性微小球と前記第2の熱膨張性微小球の発泡開始温度は20℃以上異なることを特徴とする請求項1に記載の放射線撮像装置。
- 前記第1の熱膨張性微小球の発泡開始温度より前記第2の熱膨張性微小球の発泡開始温度の方が低いことを特徴とする請求項1又は2に記載の放射線撮像装置。
- 前記撮像素子は画素ピッチPで配置された複数の画素を有し、前記第2の熱膨張性微小球の平均粒径は、前記画素ピッチPより小さいことを特徴とする請求項1乃至3のいずれか1項に記載の放射線撮像装置。
- 前記撮像素子は画素ピッチPで配置された複数の画素を有し、前記第2の熱膨張性微小球の平均粒径は、前記画素ピッチPより小さく、且つ50μm以下であり、前記第2の加熱剥離型粘着層の厚みは1μm以上50μm以下であることを特徴とする請求項1乃至3のいずれか1項に記載の放射線撮像装置。
- 前記基台と前記シンチレータとの間に配置された前記撮像素子の周囲を囲んで配置された樹脂と、を有することを特徴とする請求項1乃至5のいずれか1項に記載の放射線撮像装置。
- 前記樹脂を貫通して前記撮像素子に接続された配線基板を更に有する請求項6に記載の放射線撮像装置。
- 前記撮像素子が複数の撮像素子を有し、
前記第1の加熱剥離型粘着層は、前記撮像素子毎に分離して配置されていることを特徴とする請求項1乃至7のいずれか1項に記載の放射線撮像装置。 - 前記第2の加熱剥離型粘着層は、前記シンチレータからの光を透過する光透過性を有ることを特徴とする請求項1乃至8のいずれか1項に記載の放射線撮像装置。
- 基台に固定された複数の撮像素子と、放射線を前記複数の撮像素子が感知可能な波長の光に変換するシンチレータと、を有する放射線撮像装置であって、
前記複数の撮像素子は、熱膨張性微小球を含む加熱剥離型粘着層によって前記基台に固定されており、
前記加熱剥離型粘着層は、前記複数の撮像素子毎に分離して配置されていることを特徴とする放射線撮像装置。 - 請求項1乃至10のいずれか1項に記載の放射線撮像装置と、
前記放射線撮像装置からの信号を処理する信号処理手段と、を有する放射線撮像システム。 - 基台と撮像素子の間に第1の熱膨張性微小球を含む第1の加熱剥離型粘着層を介して固定する工程と、
前記撮像素子とシンチレータの間に、前記第1の熱膨張性微小球と発泡開始温度が異なる第2の熱膨張性微小球を含む第2の加熱剥離型粘着層を介して前記基台と前記撮像素子とを固定する工程と、を有する放射線撮像装置の製造方法。 - 前記基台に固定された前記撮像素子を検査する工程と、
前記検査する工程において、欠陥を有する撮像素子と判断された場合、前記第1の熱膨張性微小球より発泡開始温度が低い前記第2の熱膨張性微小球を加熱により膨張させ、前記シンチレータを剥離する工程と、を更に有することを特徴とする請求項12に記載の放射線撮像装置の製造方法。 - 前記シンチレータを剥離する工程の後、前記欠陥を有する撮像素子を固定しながら前記第1の熱膨張性微小球を加熱により膨張させ、前記欠陥を有する撮像素子を剥離する工程を有することを特徴とする請求項13に記載の放射線撮像装置の製造方法。
- 基台と複数の撮像素子の間に前記複数の撮像素子毎に分離して配置された熱膨張性微小球を含む加熱剥離型粘着層を介して前記複数の撮像素子と前記基台とを固定する工程と、
前記複数の撮像素子とシンチレータとを固定する工程と、を有する放射線撮像装置の製造方法。
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