JP5127837B2 - 誘電体磁器および積層セラミックコンデンサ - Google Patents
誘電体磁器および積層セラミックコンデンサ Download PDFInfo
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- JP5127837B2 JP5127837B2 JP2009538968A JP2009538968A JP5127837B2 JP 5127837 B2 JP5127837 B2 JP 5127837B2 JP 2009538968 A JP2009538968 A JP 2009538968A JP 2009538968 A JP2009538968 A JP 2009538968A JP 5127837 B2 JP5127837 B2 JP 5127837B2
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- barium titanate
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- 239000003985 ceramic capacitor Substances 0.000 title claims description 26
- 229910052573 porcelain Inorganic materials 0.000 title claims description 8
- 239000013078 crystal Substances 0.000 claims description 169
- 239000000919 ceramic Substances 0.000 claims description 109
- 239000002245 particle Substances 0.000 claims description 83
- 229910002113 barium titanate Inorganic materials 0.000 claims description 61
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 61
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 49
- 239000011575 calcium Substances 0.000 claims description 25
- 229910052788 barium Inorganic materials 0.000 claims description 20
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052720 vanadium Inorganic materials 0.000 claims description 19
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052749 magnesium Inorganic materials 0.000 claims description 17
- 239000011777 magnesium Substances 0.000 claims description 17
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 16
- 239000011572 manganese Substances 0.000 claims description 16
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 15
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 14
- 229910052748 manganese Inorganic materials 0.000 claims description 14
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 14
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 13
- 238000002441 X-ray diffraction Methods 0.000 claims description 13
- 229910052791 calcium Inorganic materials 0.000 claims description 13
- 229910052727 yttrium Inorganic materials 0.000 claims description 13
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 13
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 11
- 229910052691 Erbium Inorganic materials 0.000 claims description 11
- 229910052689 Holmium Inorganic materials 0.000 claims description 11
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 11
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 11
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052771 Terbium Inorganic materials 0.000 claims description 7
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 7
- 239000000843 powder Substances 0.000 description 101
- 238000009413 insulation Methods 0.000 description 45
- 238000012360 testing method Methods 0.000 description 20
- 238000010304 firing Methods 0.000 description 19
- 239000003990 capacitor Substances 0.000 description 15
- 239000000203 mixture Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 11
- 238000004458 analytical method Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
- 239000000654 additive Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000011258 core-shell material Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000921 elemental analysis Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000010405 reoxidation reaction Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 150000001553 barium compounds Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009824 pressure lamination Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
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- H—ELECTRICITY
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- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
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- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6582—Hydrogen containing atmosphere
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/762—Cubic symmetry, e.g. beta-SiC
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/765—Tetragonal symmetry
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
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- Microelectronics & Electronic Packaging (AREA)
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| JP2009538968A JP5127837B2 (ja) | 2007-10-29 | 2008-08-26 | 誘電体磁器および積層セラミックコンデンサ |
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| KR101435398B1 (ko) * | 2011-03-04 | 2014-08-28 | 다이요 유덴 가부시키가이샤 | 적층 세라믹 콘덴서 |
| JP5535402B2 (ja) * | 2011-12-17 | 2014-07-02 | 京セラ株式会社 | コンデンサ |
| JP5999030B2 (ja) * | 2013-06-05 | 2016-09-28 | 信越化学工業株式会社 | セラミックス成型体の脱脂方法 |
| CN114014649B (zh) * | 2021-12-13 | 2023-07-25 | 深圳先进电子材料国际创新研究院 | 共掺杂钛酸钡陶瓷介电材料、制备方法及其应用 |
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| JP2007197233A (ja) * | 2006-01-24 | 2007-08-09 | Murata Mfg Co Ltd | 誘電体セラミック及び該誘電体セラミックの製造方法、並びに積層セラミックコンデンサ |
| JP2007258661A (ja) * | 2005-09-28 | 2007-10-04 | Kyocera Corp | 積層セラミックコンデンサおよびその製法 |
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| US7433173B2 (en) * | 2004-11-25 | 2008-10-07 | Kyocera Corporation | Multilayer ceramic capacitor and method for manufacturing the same |
| WO2007026614A1 (ja) * | 2005-08-29 | 2007-03-08 | Kyocera Corporation | 誘電体磁器およびその製法、並びに積層セラミックコンデンサ |
| CN101030478B (zh) * | 2007-03-27 | 2010-11-17 | 天津大学 | 一种高介金属-电介质复合陶瓷电容器介质及其制备方法 |
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| JP2007258661A (ja) * | 2005-09-28 | 2007-10-04 | Kyocera Corp | 積層セラミックコンデンサおよびその製法 |
| JP2007197233A (ja) * | 2006-01-24 | 2007-08-09 | Murata Mfg Co Ltd | 誘電体セラミック及び該誘電体セラミックの製造方法、並びに積層セラミックコンデンサ |
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| JPWO2009057373A1 (ja) | 2011-03-10 |
| WO2009057373A1 (ja) | 2009-05-07 |
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