JP5127372B2 - 蒸着装置 - Google Patents

蒸着装置 Download PDF

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Publication number
JP5127372B2
JP5127372B2 JP2007227408A JP2007227408A JP5127372B2 JP 5127372 B2 JP5127372 B2 JP 5127372B2 JP 2007227408 A JP2007227408 A JP 2007227408A JP 2007227408 A JP2007227408 A JP 2007227408A JP 5127372 B2 JP5127372 B2 JP 5127372B2
Authority
JP
Japan
Prior art keywords
vapor deposition
pipe
flow rate
pipes
film formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007227408A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009057614A5 (enExample
JP2009057614A (ja
Inventor
恭英 小沼
信貴 浮ヶ谷
岳彦 曽田
清 倉持
友和 須志原
直広 中根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2007227408A priority Critical patent/JP5127372B2/ja
Priority to US12/193,612 priority patent/US20090061084A1/en
Priority to KR1020080086172A priority patent/KR101037121B1/ko
Priority to CN2008102148949A priority patent/CN101381859B/zh
Publication of JP2009057614A publication Critical patent/JP2009057614A/ja
Publication of JP2009057614A5 publication Critical patent/JP2009057614A5/ja
Application granted granted Critical
Publication of JP5127372B2 publication Critical patent/JP5127372B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2007227408A 2007-09-03 2007-09-03 蒸着装置 Expired - Fee Related JP5127372B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007227408A JP5127372B2 (ja) 2007-09-03 2007-09-03 蒸着装置
US12/193,612 US20090061084A1 (en) 2007-09-03 2008-08-18 Vapor deposition system and vapor deposition method
KR1020080086172A KR101037121B1 (ko) 2007-09-03 2008-09-02 증착장치 및 증착방법
CN2008102148949A CN101381859B (zh) 2007-09-03 2008-09-03 气相沉积系统和气相沉积方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007227408A JP5127372B2 (ja) 2007-09-03 2007-09-03 蒸着装置

Publications (3)

Publication Number Publication Date
JP2009057614A JP2009057614A (ja) 2009-03-19
JP2009057614A5 JP2009057614A5 (enExample) 2010-10-21
JP5127372B2 true JP5127372B2 (ja) 2013-01-23

Family

ID=40407929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007227408A Expired - Fee Related JP5127372B2 (ja) 2007-09-03 2007-09-03 蒸着装置

Country Status (4)

Country Link
US (1) US20090061084A1 (enExample)
JP (1) JP5127372B2 (enExample)
KR (1) KR101037121B1 (enExample)
CN (1) CN101381859B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5367195B2 (ja) * 2011-03-15 2013-12-11 シャープ株式会社 蒸着装置、蒸着方法、及び有機ｅｌ表示装置の製造方法
DE102014014970B4 (de) 2014-10-14 2020-01-02 NICE Solar Energy GmbH Vorrichtung und Verfahren zur Schichtdickenmessung für Dampfabscheideverfahren

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0290662U (enExample) * 1988-12-27 1990-07-18
US6749906B2 (en) * 2002-04-25 2004-06-15 Eastman Kodak Company Thermal physical vapor deposition apparatus with detachable vapor source(s) and method
JP4366226B2 (ja) * 2004-03-30 2009-11-18 東北パイオニア株式会社 有機ｅｌパネルの製造方法、有機ｅｌパネルの成膜装置
JP4476019B2 (ja) * 2004-05-20 2010-06-09 東北パイオニア株式会社 成膜源、真空成膜装置、有機ｅｌ素子の製造方法
JP2006057173A (ja) * 2004-08-24 2006-03-02 Tohoku Pioneer Corp 成膜源、真空成膜装置、有機ｅｌパネルの製造方法
JP4560394B2 (ja) * 2004-12-13 2010-10-13 長州産業株式会社 薄膜形成用分子供給装置
JP4545028B2 (ja) * 2005-03-30 2010-09-15 日立造船株式会社 蒸着装置
JP5064810B2 (ja) * 2006-01-27 2012-10-31 キヤノン株式会社 蒸着装置および蒸着方法
JP4966028B2 (ja) * 2007-01-15 2012-07-04 パナソニック株式会社 真空蒸着装置

Also Published As

Publication number Publication date
KR20090024081A (ko) 2009-03-06
CN101381859B (zh) 2011-03-02
JP2009057614A (ja) 2009-03-19
CN101381859A (zh) 2009-03-11
KR101037121B1 (ko) 2011-05-26
US20090061084A1 (en) 2009-03-05

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