JP2009057614A - 蒸着装置及び蒸着方法 - Google Patents
蒸着装置及び蒸着方法 Download PDFInfo
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- JP2009057614A JP2009057614A JP2007227408A JP2007227408A JP2009057614A JP 2009057614 A JP2009057614 A JP 2009057614A JP 2007227408 A JP2007227408 A JP 2007227408A JP 2007227408 A JP2007227408 A JP 2007227408A JP 2009057614 A JP2009057614 A JP 2009057614A
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- vapor deposition
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 124
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 113
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 34
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims 1
- 230000007246 mechanism Effects 0.000 abstract description 21
- 150000002894 organic compounds Chemical class 0.000 abstract description 6
- 238000003860 storage Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 54
- 230000008020 evaporation Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】基板2に有機化合物膜等を成膜する蒸着方法において、蒸着材料6を充填した材料収容部7を加熱することによって、蒸着材料を蒸発又は昇華させ、材料収容部7に連結された複数本の配管8,9を通して、真空チャンバー1の成膜空間に放出する。蒸着材料の真空チャンバー1内への放出量を調整する流量調整機構10は、コンダクタンスの異なる配管8,9のうちのコンダクタンスの小さい配管9に設けられ、成膜速度を微細に調整することができる。
【選択図】図1
Description
図2の(b)に示す蒸着源を用いて基板上に有機EL素子を製造した。蒸着源は、材料収容部117に配管118を1本のみ備えた。この配管118は、蒸着材料の流量を制御する流量調整機構120としてニードルバルブを設置した。目標成膜速度は20[Å/s]とした。蒸着源以外の構成は、実施例1と同様のものを用いた。
2 基板
3 素子分離膜
4 マスク
5 蒸着源
6 蒸着材料
7 材料収容部
8、9、18、28、38、39a、39b 配管
10、20、30、40 流量調整機構
11 連結空間
12 放出部
Claims (7)
- 蒸発又は昇華した蒸着材料を被成膜基板に付着させて成膜する蒸着装置において、
成膜を行う成膜空間を有する真空チャンバーと、
蒸着材料を充填する材料収容部と、
前記材料収容部を加熱して蒸着材料を蒸発又は昇華させる手段と、
前記材料収容部から前記真空チャンバーの前記成膜空間に蒸着材料を供給するための複数本の配管と、
前記複数本の配管のうちの少なくとも1本の配管における蒸着材料の流れを流量制御又は開放・遮断する手段と、を備えることを特徴とする蒸着装置。 - 前記複数本の配管を連結する連結部と、
前記連結部から蒸着材料を前記真空チャンバーの前記成膜空間に放出する放出部と、を備えることを特徴とする請求項1に記載の蒸着装置。 - 各配管を加熱する手段を備えることを特徴とする請求項1又は2に記載の蒸着装置。
- 前記複数本の配管が、コンダクタンスの異なる配管を含むことを特徴とする請求項1ないし3のいずれかに記載の蒸着装置。
- コンダクタンスの小さい配管に、前記蒸着材料の流れを流量制御又は開放・遮断する手段を備えることを特徴とする請求項4に記載の蒸着装置。
- 前記材料収容部を前記真空チャンバーの外に配置することを特徴とする請求項1ないし5のいずれかに記載の蒸着装置。
- 蒸発又は昇華した蒸着材料を被成膜基板に付着させて成膜する蒸着方法において、
蒸着材料を充填した材料収容部を加熱することによって、蒸着材料を蒸発又は昇華させ、前記材料収容部に連結された複数本の配管を通して、真空チャンバーの成膜空間へ供給する蒸着工程と、
前記複数本の配管のうちの少なくとも1本の配管における蒸着材料の流れを流量制御又は開放・遮断することで、前記真空チャンバーの前記成膜空間へ供給される蒸着材料の流量を調整する工程と、を有することを特徴とする蒸着方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007227408A JP5127372B2 (ja) | 2007-09-03 | 2007-09-03 | 蒸着装置 |
US12/193,612 US20090061084A1 (en) | 2007-09-03 | 2008-08-18 | Vapor deposition system and vapor deposition method |
KR1020080086172A KR101037121B1 (ko) | 2007-09-03 | 2008-09-02 | 증착장치 및 증착방법 |
CN2008102148949A CN101381859B (zh) | 2007-09-03 | 2008-09-03 | 气相沉积系统和气相沉积方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007227408A JP5127372B2 (ja) | 2007-09-03 | 2007-09-03 | 蒸着装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009057614A true JP2009057614A (ja) | 2009-03-19 |
JP2009057614A5 JP2009057614A5 (ja) | 2010-10-21 |
JP5127372B2 JP5127372B2 (ja) | 2013-01-23 |
Family
ID=40407929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007227408A Expired - Fee Related JP5127372B2 (ja) | 2007-09-03 | 2007-09-03 | 蒸着装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090061084A1 (ja) |
JP (1) | JP5127372B2 (ja) |
KR (1) | KR101037121B1 (ja) |
CN (1) | CN101381859B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9748526B2 (en) * | 2011-03-15 | 2017-08-29 | Sharp Kabushiki Kaisha | Vapor deposition device, vapor deposition method, and method for producing organic el display device |
DE102014014970B4 (de) | 2014-10-14 | 2020-01-02 | NICE Solar Energy GmbH | Vorrichtung und Verfahren zur Schichtdickenmessung für Dampfabscheideverfahren |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0290662U (ja) * | 1988-12-27 | 1990-07-18 | ||
JP2005281808A (ja) * | 2004-03-30 | 2005-10-13 | Tohoku Pioneer Corp | 成膜源、成膜装置、成膜方法、有機elパネルの製造方法、有機elパネル |
JP2005330551A (ja) * | 2004-05-20 | 2005-12-02 | Tohoku Pioneer Corp | 成膜源、真空成膜装置、有機el素子の製造方法、有機el素子 |
JP2006057173A (ja) * | 2004-08-24 | 2006-03-02 | Tohoku Pioneer Corp | 成膜源、真空成膜装置、有機elパネルの製造方法 |
JP2006274370A (ja) * | 2005-03-30 | 2006-10-12 | Hitachi Zosen Corp | 蒸着装置 |
JP2008169456A (ja) * | 2007-01-15 | 2008-07-24 | Matsushita Electric Works Ltd | 真空蒸着装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6749906B2 (en) * | 2002-04-25 | 2004-06-15 | Eastman Kodak Company | Thermal physical vapor deposition apparatus with detachable vapor source(s) and method |
JP4560394B2 (ja) * | 2004-12-13 | 2010-10-13 | 長州産業株式会社 | 薄膜形成用分子供給装置 |
JP5064810B2 (ja) * | 2006-01-27 | 2012-10-31 | キヤノン株式会社 | 蒸着装置および蒸着方法 |
-
2007
- 2007-09-03 JP JP2007227408A patent/JP5127372B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-18 US US12/193,612 patent/US20090061084A1/en not_active Abandoned
- 2008-09-02 KR KR1020080086172A patent/KR101037121B1/ko active IP Right Grant
- 2008-09-03 CN CN2008102148949A patent/CN101381859B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0290662U (ja) * | 1988-12-27 | 1990-07-18 | ||
JP2005281808A (ja) * | 2004-03-30 | 2005-10-13 | Tohoku Pioneer Corp | 成膜源、成膜装置、成膜方法、有機elパネルの製造方法、有機elパネル |
JP2005330551A (ja) * | 2004-05-20 | 2005-12-02 | Tohoku Pioneer Corp | 成膜源、真空成膜装置、有機el素子の製造方法、有機el素子 |
JP2006057173A (ja) * | 2004-08-24 | 2006-03-02 | Tohoku Pioneer Corp | 成膜源、真空成膜装置、有機elパネルの製造方法 |
JP2006274370A (ja) * | 2005-03-30 | 2006-10-12 | Hitachi Zosen Corp | 蒸着装置 |
JP2008169456A (ja) * | 2007-01-15 | 2008-07-24 | Matsushita Electric Works Ltd | 真空蒸着装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5127372B2 (ja) | 2013-01-23 |
CN101381859A (zh) | 2009-03-11 |
CN101381859B (zh) | 2011-03-02 |
KR20090024081A (ko) | 2009-03-06 |
US20090061084A1 (en) | 2009-03-05 |
KR101037121B1 (ko) | 2011-05-26 |
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