JP5121612B2 - 半導体材料から構成された基板を研磨する方法 - Google Patents

半導体材料から構成された基板を研磨する方法 Download PDF

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Publication number
JP5121612B2
JP5121612B2 JP2008184841A JP2008184841A JP5121612B2 JP 5121612 B2 JP5121612 B2 JP 5121612B2 JP 2008184841 A JP2008184841 A JP 2008184841A JP 2008184841 A JP2008184841 A JP 2008184841A JP 5121612 B2 JP5121612 B2 JP 5121612B2
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JP
Japan
Prior art keywords
polishing
substrate
abrasive
polishing step
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008184841A
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English (en)
Japanese (ja)
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JP2009033159A (ja
JP2009033159A5 (https=
Inventor
シュヴァントナー ユルゲン
ブッシュハルト トーマス
コッペルト ローラント
ピーチュ ゲオルク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
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Siltronic AG
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Publication of JP2009033159A5 publication Critical patent/JP2009033159A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2008184841A 2007-07-27 2008-07-16 半導体材料から構成された基板を研磨する方法 Expired - Fee Related JP5121612B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007035266A DE102007035266B4 (de) 2007-07-27 2007-07-27 Verfahren zum Polieren eines Substrates aus Silicium oder einer Legierung aus Silicium und Germanium
DE102007035266.4 2007-07-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011248831A Division JP5453378B2 (ja) 2007-07-27 2011-11-14 半導体材料から構成された基板を研磨する方法

Publications (3)

Publication Number Publication Date
JP2009033159A JP2009033159A (ja) 2009-02-12
JP2009033159A5 JP2009033159A5 (https=) 2012-01-05
JP5121612B2 true JP5121612B2 (ja) 2013-01-16

Family

ID=40157304

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008184841A Expired - Fee Related JP5121612B2 (ja) 2007-07-27 2008-07-16 半導体材料から構成された基板を研磨する方法
JP2011248831A Expired - Fee Related JP5453378B2 (ja) 2007-07-27 2011-11-14 半導体材料から構成された基板を研磨する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011248831A Expired - Fee Related JP5453378B2 (ja) 2007-07-27 2011-11-14 半導体材料から構成された基板を研磨する方法

Country Status (7)

Country Link
US (1) US8647985B2 (https=)
JP (2) JP5121612B2 (https=)
KR (1) KR100979737B1 (https=)
CN (1) CN101355032B (https=)
DE (1) DE102007035266B4 (https=)
SG (1) SG149772A1 (https=)
TW (1) TWI470684B (https=)

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DE102008053610B4 (de) 2008-10-29 2011-03-31 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
US8338301B1 (en) * 2008-11-06 2012-12-25 Stc.Unm Slurry-free chemical mechanical planarization (CMP) of engineered germanium-on-silicon wafers
DE102008059044B4 (de) * 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
DE102009025243B4 (de) * 2009-06-17 2011-11-17 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102009030295B4 (de) * 2009-06-24 2014-05-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102009030294B4 (de) * 2009-06-24 2013-04-25 Siltronic Ag Verfahren zur Politur der Kante einer Halbleiterscheibe
DE102009030298B4 (de) 2009-06-24 2012-07-12 Siltronic Ag Verfahren zur lokalen Politur einer Halbleiterscheibe
DE102009030296B4 (de) * 2009-06-24 2013-05-08 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Siliciumscheibe
DE102009030292B4 (de) * 2009-06-24 2011-12-01 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
JP5795461B2 (ja) 2009-08-19 2015-10-14 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
DE102009038941B4 (de) 2009-08-26 2013-03-21 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102009047926A1 (de) * 2009-10-01 2011-04-14 Siltronic Ag Verfahren zum Polieren von Halbleiterscheiben
DE102009051007B4 (de) * 2009-10-28 2011-12-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102009051008B4 (de) 2009-10-28 2013-05-23 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102009052744B4 (de) * 2009-11-11 2013-08-29 Siltronic Ag Verfahren zur Politur einer Halbleiterscheibe
DE102009057593A1 (de) * 2009-12-09 2011-06-16 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102010005904B4 (de) 2010-01-27 2012-11-22 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102010010885B4 (de) 2010-03-10 2017-06-08 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102010013520B4 (de) 2010-03-31 2013-02-07 Siltronic Ag Verfahren zur beidseitigen Politur einer Halbleiterscheibe
DE102010013519B4 (de) 2010-03-31 2012-12-27 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102010014874A1 (de) 2010-04-14 2011-10-20 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
WO2011136387A1 (ja) * 2010-04-28 2011-11-03 株式会社バイコウスキージャパン サファイア研磨用スラリー、及びサファイアの研磨方法
DE102010026352A1 (de) * 2010-05-05 2011-11-10 Siltronic Ag Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung einer Halbleiterscheibe
DE102010024040A1 (de) 2010-06-16 2011-12-22 Siltronic Ag Verfahren zur Politur einer Halbleiterscheibe
DE102011082777A1 (de) 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
US9238755B2 (en) * 2011-11-25 2016-01-19 Fujima Incorporated Polishing composition
DE102011089362B4 (de) 2011-12-21 2014-01-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
DE102012201516A1 (de) 2012-02-02 2013-08-08 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
WO2013157442A1 (ja) * 2012-04-18 2013-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
DE102012214998B4 (de) 2012-08-23 2014-07-24 Siltronic Ag Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe
DE102012218745A1 (de) 2012-10-15 2014-04-17 Siltronic Ag Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe
DE102013204839A1 (de) 2013-03-19 2014-09-25 Siltronic Ag Verfahren zum Polieren einer Scheibe aus Halbleitermaterial
DE102013205448A1 (de) 2013-03-27 2014-10-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
DE102013213838A1 (de) 2013-07-15 2014-09-25 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
JP6259723B2 (ja) * 2014-06-18 2018-01-10 株式会社フジミインコーポレーテッド シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット
US9982351B1 (en) 2017-01-31 2018-05-29 GM Global Technology Operations LLC Chemical mechanical polishing for improved contrast resolution
CN107014653A (zh) * 2017-04-18 2017-08-04 西华大学 检测用高硅铝合金样品及其制备方法
EP3476983A4 (en) * 2017-04-28 2020-04-01 JX Nippon Mining & Metals Corporation SEMICONDUCTOR WAFERS AND METHOD FOR POLISHING SEMICONDUCTOR WAFERS
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US12386340B2 (en) 2022-02-25 2025-08-12 Globalwafers Co., Ltd. Systems and methods for generating post-polishing topography for enhanced wafer manufacturing
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Also Published As

Publication number Publication date
KR100979737B1 (ko) 2010-09-07
TW200905737A (en) 2009-02-01
JP2009033159A (ja) 2009-02-12
SG149772A1 (en) 2009-02-27
US20090029552A1 (en) 2009-01-29
US8647985B2 (en) 2014-02-11
DE102007035266A1 (de) 2009-01-29
CN101355032A (zh) 2009-01-28
JP5453378B2 (ja) 2014-03-26
KR20090012053A (ko) 2009-02-02
CN101355032B (zh) 2010-12-01
TWI470684B (zh) 2015-01-21
JP2012060149A (ja) 2012-03-22
DE102007035266B4 (de) 2010-03-25

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