JP5121612B2 - 半導体材料から構成された基板を研磨する方法 - Google Patents

半導体材料から構成された基板を研磨する方法 Download PDF

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Publication number
JP5121612B2
JP5121612B2 JP2008184841A JP2008184841A JP5121612B2 JP 5121612 B2 JP5121612 B2 JP 5121612B2 JP 2008184841 A JP2008184841 A JP 2008184841A JP 2008184841 A JP2008184841 A JP 2008184841A JP 5121612 B2 JP5121612 B2 JP 5121612B2
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JP
Japan
Prior art keywords
polishing
substrate
abrasive
polishing step
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008184841A
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English (en)
Japanese (ja)
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JP2009033159A5 (enExample
JP2009033159A (ja
Inventor
シュヴァントナー ユルゲン
ブッシュハルト トーマス
コッペルト ローラント
ピーチュ ゲオルク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
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Siltronic AG
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Publication date
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Publication of JP2009033159A publication Critical patent/JP2009033159A/ja
Publication of JP2009033159A5 publication Critical patent/JP2009033159A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2008184841A 2007-07-27 2008-07-16 半導体材料から構成された基板を研磨する方法 Expired - Fee Related JP5121612B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007035266A DE102007035266B4 (de) 2007-07-27 2007-07-27 Verfahren zum Polieren eines Substrates aus Silicium oder einer Legierung aus Silicium und Germanium
DE102007035266.4 2007-07-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011248831A Division JP5453378B2 (ja) 2007-07-27 2011-11-14 半導体材料から構成された基板を研磨する方法

Publications (3)

Publication Number Publication Date
JP2009033159A JP2009033159A (ja) 2009-02-12
JP2009033159A5 JP2009033159A5 (enExample) 2012-01-05
JP5121612B2 true JP5121612B2 (ja) 2013-01-16

Family

ID=40157304

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008184841A Expired - Fee Related JP5121612B2 (ja) 2007-07-27 2008-07-16 半導体材料から構成された基板を研磨する方法
JP2011248831A Expired - Fee Related JP5453378B2 (ja) 2007-07-27 2011-11-14 半導体材料から構成された基板を研磨する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011248831A Expired - Fee Related JP5453378B2 (ja) 2007-07-27 2011-11-14 半導体材料から構成された基板を研磨する方法

Country Status (7)

Country Link
US (1) US8647985B2 (enExample)
JP (2) JP5121612B2 (enExample)
KR (1) KR100979737B1 (enExample)
CN (1) CN101355032B (enExample)
DE (1) DE102007035266B4 (enExample)
SG (1) SG149772A1 (enExample)
TW (1) TWI470684B (enExample)

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DE102008053610B4 (de) 2008-10-29 2011-03-31 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
US8338301B1 (en) * 2008-11-06 2012-12-25 Stc.Unm Slurry-free chemical mechanical planarization (CMP) of engineered germanium-on-silicon wafers
DE102008059044B4 (de) 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
DE102009025243B4 (de) 2009-06-17 2011-11-17 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
DE102009030298B4 (de) * 2009-06-24 2012-07-12 Siltronic Ag Verfahren zur lokalen Politur einer Halbleiterscheibe
DE102009030295B4 (de) 2009-06-24 2014-05-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102009030294B4 (de) * 2009-06-24 2013-04-25 Siltronic Ag Verfahren zur Politur der Kante einer Halbleiterscheibe
DE102009030296B4 (de) 2009-06-24 2013-05-08 Siltronic Ag Verfahren zur Herstellung einer epitaxierten Siliciumscheibe
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102009030292B4 (de) * 2009-06-24 2011-12-01 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
JP5795461B2 (ja) 2009-08-19 2015-10-14 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
DE102009038941B4 (de) 2009-08-26 2013-03-21 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102009047926A1 (de) * 2009-10-01 2011-04-14 Siltronic Ag Verfahren zum Polieren von Halbleiterscheiben
DE102009051008B4 (de) 2009-10-28 2013-05-23 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102009051007B4 (de) * 2009-10-28 2011-12-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102009052744B4 (de) 2009-11-11 2013-08-29 Siltronic Ag Verfahren zur Politur einer Halbleiterscheibe
DE102009057593A1 (de) * 2009-12-09 2011-06-16 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102010005904B4 (de) 2010-01-27 2012-11-22 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102010010885B4 (de) 2010-03-10 2017-06-08 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102010013519B4 (de) 2010-03-31 2012-12-27 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
DE102010013520B4 (de) 2010-03-31 2013-02-07 Siltronic Ag Verfahren zur beidseitigen Politur einer Halbleiterscheibe
DE102010014874A1 (de) 2010-04-14 2011-10-20 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
CN102869478A (zh) * 2010-04-28 2013-01-09 日本百考基株式会社 蓝宝石研磨用浆液和蓝宝石的研磨方法
DE102010026352A1 (de) * 2010-05-05 2011-11-10 Siltronic Ag Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung einer Halbleiterscheibe
DE102010024040A1 (de) 2010-06-16 2011-12-22 Siltronic Ag Verfahren zur Politur einer Halbleiterscheibe
DE102011082777A1 (de) 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
WO2013077369A1 (ja) 2011-11-25 2013-05-30 株式会社 フジミインコーポレーテッド 研磨用組成物
DE102011089362B4 (de) 2011-12-21 2014-01-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
DE102012201516A1 (de) 2012-02-02 2013-08-08 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
US20150060400A1 (en) * 2012-04-18 2015-03-05 Fujimi Incorporated Polishing composition
DE102012214998B4 (de) 2012-08-23 2014-07-24 Siltronic Ag Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe
DE102012218745A1 (de) 2012-10-15 2014-04-17 Siltronic Ag Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe
DE102013204839A1 (de) 2013-03-19 2014-09-25 Siltronic Ag Verfahren zum Polieren einer Scheibe aus Halbleitermaterial
DE102013205448A1 (de) 2013-03-27 2014-10-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
DE102013213838A1 (de) 2013-07-15 2014-09-25 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
JP6259723B2 (ja) * 2014-06-18 2018-01-10 株式会社フジミインコーポレーテッド シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット
US9982351B1 (en) 2017-01-31 2018-05-29 GM Global Technology Operations LLC Chemical mechanical polishing for improved contrast resolution
CN107014653A (zh) * 2017-04-18 2017-08-04 西华大学 检测用高硅铝合金样品及其制备方法
CN109689946B (zh) * 2017-04-28 2021-03-12 Ｊｘ金属株式会社 半导体晶圆及半导体晶圆的研磨方法
US11415971B2 (en) 2020-02-10 2022-08-16 Globalwafers Co., Ltd. Systems and methods for enhanced wafer manufacturing
US12386340B2 (en) 2022-02-25 2025-08-12 Globalwafers Co., Ltd. Systems and methods for generating post-polishing topography for enhanced wafer manufacturing
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Also Published As

Publication number Publication date
DE102007035266A1 (de) 2009-01-29
JP2009033159A (ja) 2009-02-12
KR100979737B1 (ko) 2010-09-07
KR20090012053A (ko) 2009-02-02
JP5453378B2 (ja) 2014-03-26
SG149772A1 (en) 2009-02-27
TW200905737A (en) 2009-02-01
CN101355032A (zh) 2009-01-28
CN101355032B (zh) 2010-12-01
TWI470684B (zh) 2015-01-21
US20090029552A1 (en) 2009-01-29
JP2012060149A (ja) 2012-03-22
US8647985B2 (en) 2014-02-11
DE102007035266B4 (de) 2010-03-25

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