JP5100088B2 - 露光装置及びデバイス製造方法 - Google Patents

露光装置及びデバイス製造方法 Download PDF

Info

Publication number
JP5100088B2
JP5100088B2 JP2006302137A JP2006302137A JP5100088B2 JP 5100088 B2 JP5100088 B2 JP 5100088B2 JP 2006302137 A JP2006302137 A JP 2006302137A JP 2006302137 A JP2006302137 A JP 2006302137A JP 5100088 B2 JP5100088 B2 JP 5100088B2
Authority
JP
Japan
Prior art keywords
substrate
exposure
shutter
light
illumination light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2006302137A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008118062A5 (enExample
JP2008118062A (ja
Inventor
真一 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006302137A priority Critical patent/JP5100088B2/ja
Priority to US11/935,814 priority patent/US7936446B2/en
Priority to TW096141897A priority patent/TWI388937B/zh
Priority to KR1020070112939A priority patent/KR100972240B1/ko
Publication of JP2008118062A publication Critical patent/JP2008118062A/ja
Publication of JP2008118062A5 publication Critical patent/JP2008118062A5/ja
Application granted granted Critical
Publication of JP5100088B2 publication Critical patent/JP5100088B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00Photographic printing apparatus
    • G03B27/72Controlling or varying light intensity, spectral composition, or exposure time in photographic printing apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558Dose control, i.e. achievement of a desired dose
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2006302137A 2006-11-07 2006-11-07 露光装置及びデバイス製造方法 Active JP5100088B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006302137A JP5100088B2 (ja) 2006-11-07 2006-11-07 露光装置及びデバイス製造方法
US11/935,814 US7936446B2 (en) 2006-11-07 2007-11-06 Exposure apparatus and device manufacturing method
TW096141897A TWI388937B (zh) 2006-11-07 2007-11-06 曝光設備及裝置製造方法
KR1020070112939A KR100972240B1 (ko) 2006-11-07 2007-11-07 노광 장치 및 디바이스 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006302137A JP5100088B2 (ja) 2006-11-07 2006-11-07 露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2008118062A JP2008118062A (ja) 2008-05-22
JP2008118062A5 JP2008118062A5 (enExample) 2009-12-24
JP5100088B2 true JP5100088B2 (ja) 2012-12-19

Family

ID=39359445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006302137A Active JP5100088B2 (ja) 2006-11-07 2006-11-07 露光装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US7936446B2 (enExample)
JP (1) JP5100088B2 (enExample)
KR (1) KR100972240B1 (enExample)
TW (1) TWI388937B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5173650B2 (ja) * 2008-07-29 2013-04-03 キヤノン株式会社 露光装置およびデバイス製造方法
KR101154779B1 (ko) * 2011-03-11 2012-06-18 하이디스 테크놀로지 주식회사 포토 리소그래피 방법
TWI436030B (zh) 2012-07-04 2014-05-01 Test Research Inc 三維量測系統
CN103528541B (zh) * 2012-07-04 2016-05-04 德律科技股份有限公司 三维测量系统
JP6861463B2 (ja) * 2015-06-16 2021-04-21 キヤノン株式会社 露光装置及び物品の製造方法
KR102355296B1 (ko) * 2017-08-08 2022-01-25 삼성전자주식회사 반도체 메모리 장치 및 이의 제조를 위한 반도체 메모리 제조 장치
JP7352332B2 (ja) * 2018-05-14 2023-09-28 キヤノン株式会社 露光装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771132A (en) * 1980-10-21 1982-05-01 Canon Inc Exposure controlling system
JPS6134252A (ja) 1984-07-20 1986-02-18 津田駒工業株式会社 織機における不良緯糸の自動引出方法と装置
JPH0555106A (ja) * 1991-08-28 1993-03-05 Canon Inc 露光量制御装置
JP2843895B2 (ja) * 1991-10-01 1999-01-06 キヤノン株式会社 露光装置
JP3103461B2 (ja) * 1993-06-29 2000-10-30 キヤノン株式会社 X線露光方法と装置、並びにデバイス製造方法
JPH06120103A (ja) * 1992-10-07 1994-04-28 Canon Inc 露光装置
JPH09320938A (ja) * 1996-05-29 1997-12-12 Nikon Corp 投影露光装置
JPH10284371A (ja) 1997-04-03 1998-10-23 Nikon Corp 露光方法及び装置
KR100616293B1 (ko) * 1999-11-11 2006-08-28 동경 엘렉트론 주식회사 기판처리장치 및 기판처리방법
JP2005252161A (ja) * 2004-03-08 2005-09-15 Powerchip Semiconductor Corp フォトリソグラフィーシステム及び関連方法
JP5025250B2 (ja) * 2006-12-15 2012-09-12 キヤノン株式会社 露光装置及びデバイス製造方法
JP5173650B2 (ja) * 2008-07-29 2013-04-03 キヤノン株式会社 露光装置およびデバイス製造方法

Also Published As

Publication number Publication date
TWI388937B (zh) 2013-03-11
US20080106721A1 (en) 2008-05-08
JP2008118062A (ja) 2008-05-22
TW200832078A (en) 2008-08-01
KR100972240B1 (ko) 2010-07-23
US7936446B2 (en) 2011-05-03
KR20080041591A (ko) 2008-05-13

Similar Documents

Publication Publication Date Title
JP3186011B2 (ja) 投影露光装置及びデバイス製造方法
US6366341B1 (en) Exposure method and exposure apparatus
KR102260941B1 (ko) 계측 센서, 리소그래피 장치 및 디바이스 제조 방법
KR100972240B1 (ko) 노광 장치 및 디바이스 제조 방법
JP3254916B2 (ja) 投影光学系のコマ収差を検出する方法
KR100972879B1 (ko) 노광장치 및 디바이스 제조방법
JP2009141154A (ja) 走査露光装置及びデバイス製造方法
JP5173650B2 (ja) 露光装置およびデバイス製造方法
JP3376045B2 (ja) 走査型露光装置及び該走査型露光装置を用いるデバイス製造方法
US20060209280A1 (en) Immersion exposure apparatus, immersion exposure method, and device manufacturing method
JP3870058B2 (ja) スキャン露光装置及び方法並びにデバイスの製造方法
JP4277448B2 (ja) マーク検知方法及びマーク検知装置
JP2010074043A (ja) 半導体製造方法および半導体製造装置
JP4869425B2 (ja) 走査型露光装置及びデバイス製造方法
JP2009164355A (ja) 走査露光装置およびデバイス製造方法
JP4840958B2 (ja) 走査露光装置及びデバイス製造方法
JPH11243050A (ja) 露光装置
JP4838698B2 (ja) 露光装置およびデバイス製造方法
US7486379B2 (en) Exposure apparatus, method applied to the apparatus, and device manufacturing method
JP2005123234A (ja) パターン描画方法、及びパターン描画装置
JP5006711B2 (ja) 露光装置、露光方法及びデバイス製造方法
JP2010199452A (ja) 光学特性計測方法、露光方法、及びデバイス製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091109

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20091109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111027

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111031

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111228

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20111228

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120924

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120925

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151005

Year of fee payment: 3

R151 Written notification of patent or utility model registration

Ref document number: 5100088

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151005

Year of fee payment: 3