JP5068178B2 - ヘキサクロロジシラン又はその他の塩素含有シリコン前駆体を用いた微小造形物充填方法及び装置 - Google Patents

ヘキサクロロジシラン又はその他の塩素含有シリコン前駆体を用いた微小造形物充填方法及び装置 Download PDF

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JP5068178B2
JP5068178B2 JP2007551250A JP2007551250A JP5068178B2 JP 5068178 B2 JP5068178 B2 JP 5068178B2 JP 2007551250 A JP2007551250 A JP 2007551250A JP 2007551250 A JP2007551250 A JP 2007551250A JP 5068178 B2 JP5068178 B2 JP 5068178B2
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silicon
process gas
gas
containing process
microfabrication
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JP2008527738A5 (https=
JP2008527738A (ja
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リース，アレン
ディップ，アンソニー
オー，ソンホ
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Element Separation (AREA)
JP2007551250A 2005-01-18 2005-11-30 ヘキサクロロジシラン又はその他の塩素含有シリコン前駆体を用いた微小造形物充填方法及び装置 Expired - Lifetime JP5068178B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/035,730 US7205187B2 (en) 2005-01-18 2005-01-18 Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
US11/035,730 2005-01-18
PCT/US2005/043027 WO2006078354A2 (en) 2005-01-18 2005-11-30 Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor

Publications (3)

Publication Number Publication Date
JP2008527738A JP2008527738A (ja) 2008-07-24
JP2008527738A5 JP2008527738A5 (https=) 2009-01-08
JP5068178B2 true JP5068178B2 (ja) 2012-11-07

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JP2007551250A Expired - Lifetime JP5068178B2 (ja) 2005-01-18 2005-11-30 ヘキサクロロジシラン又はその他の塩素含有シリコン前駆体を用いた微小造形物充填方法及び装置

Country Status (7)

Country Link
US (1) US7205187B2 (https=)
EP (1) EP1842231A4 (https=)
JP (1) JP5068178B2 (https=)
KR (1) KR101133349B1 (https=)
CN (1) CN101111931B (https=)
TW (1) TWI306629B (https=)
WO (1) WO2006078354A2 (https=)

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US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
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JP6022273B2 (ja) * 2012-09-14 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
TWI595112B (zh) 2012-10-23 2017-08-11 蘭姆研究公司 次飽和之原子層沉積及保形膜沉積
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Also Published As

Publication number Publication date
WO2006078354A3 (en) 2006-12-07
KR101133349B1 (ko) 2012-04-06
US20060160288A1 (en) 2006-07-20
TWI306629B (en) 2009-02-21
US7205187B2 (en) 2007-04-17
TW200639940A (en) 2006-11-16
CN101111931B (zh) 2010-05-12
JP2008527738A (ja) 2008-07-24
CN101111931A (zh) 2008-01-23
WO2006078354A2 (en) 2006-07-27
EP1842231A4 (en) 2008-11-26
EP1842231A2 (en) 2007-10-10
KR20070092958A (ko) 2007-09-14

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