JP2008527738A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008527738A5 JP2008527738A5 JP2007551250A JP2007551250A JP2008527738A5 JP 2008527738 A5 JP2008527738 A5 JP 2008527738A5 JP 2007551250 A JP2007551250 A JP 2007551250A JP 2007551250 A JP2007551250 A JP 2007551250A JP 2008527738 A5 JP2008527738 A5 JP 2008527738A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- gas
- microfabrication
- exposing
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 72
- 238000000034 method Methods 0.000 claims 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 61
- 229910052710 silicon Inorganic materials 0.000 claims 61
- 239000010703 silicon Substances 0.000 claims 61
- 238000000151 deposition Methods 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 19
- 239000000463 material Substances 0.000 claims 16
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 11
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims 11
- 230000008021 deposition Effects 0.000 claims 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 10
- 239000001257 hydrogen Substances 0.000 claims 10
- 229910052739 hydrogen Inorganic materials 0.000 claims 10
- 238000009434 installation Methods 0.000 claims 8
- 238000002347 injection Methods 0.000 claims 4
- 239000007924 injection Substances 0.000 claims 4
- 229910052732 germanium Inorganic materials 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/035,730 US7205187B2 (en) | 2005-01-18 | 2005-01-18 | Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor |
| US11/035,730 | 2005-01-18 | ||
| PCT/US2005/043027 WO2006078354A2 (en) | 2005-01-18 | 2005-11-30 | Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008527738A JP2008527738A (ja) | 2008-07-24 |
| JP2008527738A5 true JP2008527738A5 (https=) | 2009-01-08 |
| JP5068178B2 JP5068178B2 (ja) | 2012-11-07 |
Family
ID=36684452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007551250A Expired - Lifetime JP5068178B2 (ja) | 2005-01-18 | 2005-11-30 | ヘキサクロロジシラン又はその他の塩素含有シリコン前駆体を用いた微小造形物充填方法及び装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7205187B2 (https=) |
| EP (1) | EP1842231A4 (https=) |
| JP (1) | JP5068178B2 (https=) |
| KR (1) | KR101133349B1 (https=) |
| CN (1) | CN101111931B (https=) |
| TW (1) | TWI306629B (https=) |
| WO (1) | WO2006078354A2 (https=) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8263474B2 (en) * | 2007-01-11 | 2012-09-11 | Tokyo Electron Limited | Reduced defect silicon or silicon germanium deposition in micro-features |
| JP2010529670A (ja) * | 2007-06-07 | 2010-08-26 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 半導体適用のための非可燃性溶媒 |
| DE102009002129A1 (de) | 2009-04-02 | 2010-10-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper |
| US8956983B2 (en) | 2010-04-15 | 2015-02-17 | Novellus Systems, Inc. | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
| US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
| US9287113B2 (en) | 2012-11-08 | 2016-03-15 | Novellus Systems, Inc. | Methods for depositing films on sensitive substrates |
| US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
| US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| US9076646B2 (en) | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
| US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US9373500B2 (en) | 2014-02-21 | 2016-06-21 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
| US9892917B2 (en) | 2010-04-15 | 2018-02-13 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
| US8524612B2 (en) | 2010-09-23 | 2013-09-03 | Novellus Systems, Inc. | Plasma-activated deposition of conformal films |
| US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
| FI124354B (fi) * | 2011-04-04 | 2014-07-15 | Okmetic Oyj | Menetelmä yhden tai useamman polykiteisen piikerroksen pinnoittamiseksi substraatille |
| US8647993B2 (en) | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
| US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
| US8728955B2 (en) | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
| JP6022273B2 (ja) * | 2012-09-14 | 2016-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| TWI595112B (zh) | 2012-10-23 | 2017-08-11 | 蘭姆研究公司 | 次飽和之原子層沉積及保形膜沉積 |
| SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
| US9214334B2 (en) | 2014-02-18 | 2015-12-15 | Lam Research Corporation | High growth rate process for conformal aluminum nitride |
| JP6055795B2 (ja) * | 2014-06-26 | 2016-12-27 | 株式会社豊田中央研究所 | 半導体装置の製造方法 |
| US9478411B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS |
| US9478438B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor |
| US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
| US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
| US10526701B2 (en) | 2015-07-09 | 2020-01-07 | Lam Research Corporation | Multi-cycle ALD process for film uniformity and thickness profile modulation |
| TWI715645B (zh) * | 2015-10-22 | 2021-01-11 | 美商應用材料股份有限公司 | 正形及縫隙填充非晶矽薄膜的沉積 |
| US9620356B1 (en) * | 2015-10-29 | 2017-04-11 | Applied Materials, Inc. | Process of selective epitaxial growth for void free gap fill |
| JP6640596B2 (ja) * | 2016-02-22 | 2020-02-05 | 東京エレクトロン株式会社 | 成膜方法 |
| US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
| US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
| US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
| JP7061432B2 (ja) * | 2017-02-16 | 2022-04-28 | レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Ｓｉ含有膜の成膜方法 |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| KR20240160679A (ko) | 2019-05-01 | 2024-11-11 | 램 리써치 코포레이션 | 변조된 원자 층 증착 |
| US12431349B2 (en) | 2019-06-07 | 2025-09-30 | Lam Research Corporation | In-situ control of film properties during atomic layer deposition |
| JP2024066258A (ja) * | 2022-11-01 | 2024-05-15 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US20250112039A1 (en) * | 2023-10-03 | 2025-04-03 | Applied Materials, Inc. | Seam-free single operation amorphous silicon gap fill |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4908330A (en) * | 1988-02-01 | 1990-03-13 | Canon Kabushiki Kaisha | Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process |
| US5766342A (en) * | 1994-10-19 | 1998-06-16 | Matsushita Electric Industrial Co., Ltd. | Method for forming silicon film and silicon film forming apparatus |
| US6184158B1 (en) * | 1996-12-23 | 2001-02-06 | Lam Research Corporation | Inductively coupled plasma CVD |
| US5830330A (en) * | 1997-05-22 | 1998-11-03 | Tokyo Electron Limited | Method and apparatus for low pressure sputtering |
| US6797558B2 (en) * | 2001-04-24 | 2004-09-28 | Micron Technology, Inc. | Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer |
| WO1999045167A1 (en) * | 1998-03-06 | 1999-09-10 | Asm America, Inc. | Method of depositing silicon with high step coverage |
| WO2001041544A2 (en) | 1999-12-11 | 2001-06-14 | Asm America, Inc. | Deposition of gate stacks including silicon germanium layers |
| KR100407684B1 (ko) * | 2000-06-28 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| KR100878103B1 (ko) * | 2001-05-04 | 2009-01-14 | 도쿄엘렉트론가부시키가이샤 | 순차적 증착 및 에칭에 의한 이온화된 ｐｖｄ |
| US7744735B2 (en) * | 2001-05-04 | 2010-06-29 | Tokyo Electron Limited | Ionized PVD with sequential deposition and etching |
| US20040009336A1 (en) * | 2002-07-11 | 2004-01-15 | Applied Materials, Inc. | Titanium silicon nitride (TISIN) barrier layer for copper diffusion |
| KR100459725B1 (ko) * | 2002-09-19 | 2004-12-03 | 삼성전자주식회사 | 금속 게이트 패턴을 갖는 반도체소자의 제조방법 |
| US6605535B1 (en) | 2002-09-26 | 2003-08-12 | Promos Technologies, Inc | Method of filling trenches using vapor-liquid-solid mechanism |
| WO2004044970A1 (ja) * | 2002-11-11 | 2004-05-27 | Hitachi Kokusai Electric Inc. | 基板処理装置 |
| KR100505441B1 (ko) * | 2003-04-04 | 2005-08-05 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
| JP2005322859A (ja) * | 2004-05-11 | 2005-11-17 | Sony Corp | 半導体装置およびその製造方法 |
-
2005
- 2005-01-18 US US11/035,730 patent/US7205187B2/en not_active Expired - Lifetime
- 2005-11-30 JP JP2007551250A patent/JP5068178B2/ja not_active Expired - Lifetime
- 2005-11-30 KR KR1020077012481A patent/KR101133349B1/ko not_active Expired - Lifetime
- 2005-11-30 EP EP05852356A patent/EP1842231A4/en not_active Ceased
- 2005-11-30 CN CN2005800468576A patent/CN101111931B/zh not_active Expired - Lifetime
- 2005-11-30 WO PCT/US2005/043027 patent/WO2006078354A2/en not_active Ceased
-
2006
- 2006-01-18 TW TW095101855A patent/TWI306629B/zh not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008527738A5 (https=) | ||
| JP5741382B2 (ja) | 薄膜の形成方法及び成膜装置 | |
| CN101496150B (zh) | 控制外延层形成期间形态的方法 | |
| US9758865B2 (en) | Silicon film forming method, thin film forming method and cross-sectional shape control method | |
| TWI787832B (zh) | 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式 | |
| US9263256B2 (en) | Method of forming seed layer, method of forming silicon film, and film forming apparatus | |
| US9646879B2 (en) | Depression filling method and processing apparatus | |
| US20140349468A1 (en) | Trench filling method and processing apparatus | |
| KR20090006178A (ko) | 에피택셜 필름 형성을 위한 클러스터 툴 | |
| KR20090026354A (ko) | 에피택시 챔버에서의 기판의 선-세정 방법 | |
| CN1930662A (zh) | 使用紫外线辐射使含硅薄膜低温外延生长的方法 | |
| US9425073B2 (en) | Depression filling method and processing apparatus | |
| JP2009545884A5 (https=) | ||
| TWI857312B (zh) | 基板處理方法、半導體裝置的製造方法、程式、及基板處理裝置 | |
| KR20170098706A (ko) | 성막 방법 | |
| US10529560B2 (en) | Method of manufacturing semiconductor device, substrate processing apparatus and recording medium | |
| JP2003347229A5 (https=) | ||
| US9653555B2 (en) | Depression filling method and processing apparatus | |
| US9865467B2 (en) | Recess filling method and processing apparatus | |
| US7637268B2 (en) | Film formation method and apparatus for semiconductor process | |
| US9966256B2 (en) | Film forming method and film forming apparatus | |
| JP5854112B2 (ja) | 薄膜の形成方法及び成膜装置 | |
| KR102116165B1 (ko) | 오목부의 매립 방법 및 처리 장치 | |
| JP7838074B2 (ja) | 基板処理方法、半導体装置の製造方法、プログラムおよび基板処理装置 | |
| WO2025074669A1 (ja) | 基板処理方法、半導体装置の製造方法、プログラムおよび基板処理装置 |