TWI306629B - Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor - Google Patents

Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor Download PDF

Info

Publication number
TWI306629B
TWI306629B TW095101855A TW95101855A TWI306629B TW I306629 B TWI306629 B TW I306629B TW 095101855 A TW095101855 A TW 095101855A TW 95101855 A TW95101855 A TW 95101855A TW I306629 B TWI306629 B TW I306629B
Authority
TW
Taiwan
Prior art keywords
gas
micro
substrate
processing
hcd
Prior art date
Application number
TW095101855A
Other languages
English (en)
Chinese (zh)
Other versions
TW200639940A (en
Inventor
Allen J Leith
Anthony Dip
Seungho Oh
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200639940A publication Critical patent/TW200639940A/zh
Application granted granted Critical
Publication of TWI306629B publication Critical patent/TWI306629B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Element Separation (AREA)
TW095101855A 2005-01-18 2006-01-18 Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor TWI306629B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/035,730 US7205187B2 (en) 2005-01-18 2005-01-18 Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor

Publications (2)

Publication Number Publication Date
TW200639940A TW200639940A (en) 2006-11-16
TWI306629B true TWI306629B (en) 2009-02-21

Family

ID=36684452

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095101855A TWI306629B (en) 2005-01-18 2006-01-18 Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor

Country Status (7)

Country Link
US (1) US7205187B2 (https=)
EP (1) EP1842231A4 (https=)
JP (1) JP5068178B2 (https=)
KR (1) KR101133349B1 (https=)
CN (1) CN101111931B (https=)
TW (1) TWI306629B (https=)
WO (1) WO2006078354A2 (https=)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8263474B2 (en) * 2007-01-11 2012-09-11 Tokyo Electron Limited Reduced defect silicon or silicon germanium deposition in micro-features
JP2010529670A (ja) * 2007-06-07 2010-08-26 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体適用のための非可燃性溶媒
DE102009002129A1 (de) 2009-04-02 2010-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
FI124354B (fi) * 2011-04-04 2014-07-15 Okmetic Oyj Menetelmä yhden tai useamman polykiteisen piikerroksen pinnoittamiseksi substraatille
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
JP6022273B2 (ja) * 2012-09-14 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
TWI595112B (zh) 2012-10-23 2017-08-11 蘭姆研究公司 次飽和之原子層沉積及保形膜沉積
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
US9214334B2 (en) 2014-02-18 2015-12-15 Lam Research Corporation High growth rate process for conformal aluminum nitride
JP6055795B2 (ja) * 2014-06-26 2016-12-27 株式会社豊田中央研究所 半導体装置の製造方法
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
TWI715645B (zh) * 2015-10-22 2021-01-11 美商應用材料股份有限公司 正形及縫隙填充非晶矽薄膜的沉積
US9620356B1 (en) * 2015-10-29 2017-04-11 Applied Materials, Inc. Process of selective epitaxial growth for void free gap fill
JP6640596B2 (ja) * 2016-02-22 2020-02-05 東京エレクトロン株式会社 成膜方法
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
JP7061432B2 (ja) * 2017-02-16 2022-04-28 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Ｓｉ含有膜の成膜方法
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
KR20240160679A (ko) 2019-05-01 2024-11-11 램 리써치 코포레이션 변조된 원자 층 증착
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition
JP2024066258A (ja) * 2022-11-01 2024-05-15 東京エレクトロン株式会社 成膜方法及び成膜装置
US20250112039A1 (en) * 2023-10-03 2025-04-03 Applied Materials, Inc. Seam-free single operation amorphous silicon gap fill

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908330A (en) * 1988-02-01 1990-03-13 Canon Kabushiki Kaisha Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process
US5766342A (en) * 1994-10-19 1998-06-16 Matsushita Electric Industrial Co., Ltd. Method for forming silicon film and silicon film forming apparatus
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US5830330A (en) * 1997-05-22 1998-11-03 Tokyo Electron Limited Method and apparatus for low pressure sputtering
US6797558B2 (en) * 2001-04-24 2004-09-28 Micron Technology, Inc. Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer
WO1999045167A1 (en) * 1998-03-06 1999-09-10 Asm America, Inc. Method of depositing silicon with high step coverage
WO2001041544A2 (en) 1999-12-11 2001-06-14 Asm America, Inc. Deposition of gate stacks including silicon germanium layers
KR100407684B1 (ko) * 2000-06-28 2003-12-01 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR100878103B1 (ko) * 2001-05-04 2009-01-14 도쿄엘렉트론가부시키가이샤 순차적 증착 및 에칭에 의한 이온화된 ｐｖｄ
US7744735B2 (en) * 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
US20040009336A1 (en) * 2002-07-11 2004-01-15 Applied Materials, Inc. Titanium silicon nitride (TISIN) barrier layer for copper diffusion
KR100459725B1 (ko) * 2002-09-19 2004-12-03 삼성전자주식회사 금속 게이트 패턴을 갖는 반도체소자의 제조방법
US6605535B1 (en) 2002-09-26 2003-08-12 Promos Technologies, Inc Method of filling trenches using vapor-liquid-solid mechanism
WO2004044970A1 (ja) * 2002-11-11 2004-05-27 Hitachi Kokusai Electric Inc. 基板処理装置
KR100505441B1 (ko) * 2003-04-04 2005-08-05 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
JP2005322859A (ja) * 2004-05-11 2005-11-17 Sony Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2006078354A3 (en) 2006-12-07
KR101133349B1 (ko) 2012-04-06
JP5068178B2 (ja) 2012-11-07
US20060160288A1 (en) 2006-07-20
US7205187B2 (en) 2007-04-17
TW200639940A (en) 2006-11-16
CN101111931B (zh) 2010-05-12
JP2008527738A (ja) 2008-07-24
CN101111931A (zh) 2008-01-23
WO2006078354A2 (en) 2006-07-27
EP1842231A4 (en) 2008-11-26
EP1842231A2 (en) 2007-10-10
KR20070092958A (ko) 2007-09-14

Similar Documents

Publication Publication Date Title
TWI306629B (en) Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
KR102915153B1 (ko) 전극을 포함하는 반도체 소자 구조
Kamins Polycrystalline silicon for integrated circuits and displays
TW419790B (en) Method and apparatus for forming laminated thin films or layers
US20060110936A1 (en) Method of increasing deposition rate of silicon dioxide on a catalyst
US10833074B2 (en) Semiconductor device and method
KR20200064925A (ko) Dram 워드라인에서의 게이트 유도 드레인 누설의 감소
TWI837191B (zh) 使用金屬基前驅物之原子層沉積(ald)製程的n型金屬氧化物半導體(nmos)金屬閘極材料之方法與設備
US20250185343A1 (en) Methods of forming an electronic device comprising deuterium-containing materials
KR102861378B1 (ko) 기판 표면 위에 다결정질 몰리브덴 막을 형성하는 방법 및 이와 관련된 다결정 몰리브덴 막을 포함한 구조
WO2007018003A1 (ja) 金属系膜形成方法及びプログラムを記録した記録媒体
TWI355032B (en) A method of forming an oxide layer
US20130102131A1 (en) Method of manufacturing semiconductor device
WO2021150391A1 (en) Electronic devices comprising silicon carbide materials and related methods and systems
CN101535172A (zh) 使用特定前驱体生长金属纳米点
TW201812870A (zh) 半導體裝置及其製造方法
US20210005451A1 (en) Electronic devices comprising crystalline materials and related memory devices and systems
US10937654B2 (en) Methods of doping a silicon-containing material and methods of forming a semiconductor device
CN109904116A (zh) 一种接触孔结构的制作方法
TW201947057A (zh) 用於高反射率鋁層的方法和設備
CN119790722A (zh) 氮化镧作为dram钼衬垫
CN115084009A (zh) 半导体装置的形成方法
TW200901290A (en) Method and apparatus for depositing thin film
CN110797304B (zh) 一种阵列基板及其制作方法
TW202341252A (zh) 半導體元件的製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees