JP5064288B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5064288B2
JP5064288B2 JP2008105314A JP2008105314A JP5064288B2 JP 5064288 B2 JP5064288 B2 JP 5064288B2 JP 2008105314 A JP2008105314 A JP 2008105314A JP 2008105314 A JP2008105314 A JP 2008105314A JP 5064288 B2 JP5064288 B2 JP 5064288B2
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Japan
Prior art keywords
underfill resin
film
semiconductor chip
semiconductor device
chip
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JP2008105314A
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English (en)
Japanese (ja)
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JP2009259924A (ja
JP2009259924A5 (enExample
Inventor
淳 大井
孝 栗原
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2008105314A priority Critical patent/JP5064288B2/ja
Priority to US12/418,637 priority patent/US8138018B2/en
Publication of JP2009259924A publication Critical patent/JP2009259924A/ja
Publication of JP2009259924A5 publication Critical patent/JP2009259924A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0134—Quaternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2008105314A 2008-04-15 2008-04-15 半導体装置の製造方法 Active JP5064288B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008105314A JP5064288B2 (ja) 2008-04-15 2008-04-15 半導体装置の製造方法
US12/418,637 US8138018B2 (en) 2008-04-15 2009-04-06 Manufacturing method of semiconductor device having underfill resin formed without void between semiconductor chip and wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008105314A JP5064288B2 (ja) 2008-04-15 2008-04-15 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012150328A Division JP2012186511A (ja) 2012-07-04 2012-07-04 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2009259924A JP2009259924A (ja) 2009-11-05
JP2009259924A5 JP2009259924A5 (enExample) 2011-05-12
JP5064288B2 true JP5064288B2 (ja) 2012-10-31

Family

ID=41164329

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Country Status (2)

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US (1) US8138018B2 (enExample)
JP (1) JP5064288B2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8403080B2 (en) 2004-04-28 2013-03-26 Baker Hughes Incorporated Earth-boring tools and components thereof including material having hard phase in a metallic binder, and metallic binder compositions for use in forming such tools and components
US8490674B2 (en) 2010-05-20 2013-07-23 Baker Hughes Incorporated Methods of forming at least a portion of earth-boring tools
US8905117B2 (en) 2010-05-20 2014-12-09 Baker Hughes Incoporated Methods of forming at least a portion of earth-boring tools, and articles formed by such methods
US8978734B2 (en) 2010-05-20 2015-03-17 Baker Hughes Incorporated Methods of forming at least a portion of earth-boring tools, and articles formed by such methods
US9428822B2 (en) 2004-04-28 2016-08-30 Baker Hughes Incorporated Earth-boring tools and components thereof including material having hard phase in a metallic binder, and metallic binder compositions for use in forming such tools and components

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697492B2 (en) * 2010-11-02 2014-04-15 Tessera, Inc. No flow underfill
TWI430376B (zh) * 2011-02-25 2014-03-11 聯測科技股份有限公司 The Method of Fabrication of Semiconductor Packaging Structure
US8963340B2 (en) * 2011-09-13 2015-02-24 International Business Machines Corporation No flow underfill or wafer level underfill and solder columns
US9978656B2 (en) * 2011-11-22 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming fine-pitch copper bump structures
US9646923B2 (en) * 2012-04-17 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices
CN104221480B (zh) * 2012-04-19 2017-09-08 松下知识产权经营株式会社 电子零件安装方法及电子零件安装线
KR101543424B1 (ko) 2012-08-24 2015-08-10 가부시키가이샤 메이키 세이사쿠쇼 적층 방법 및 적층 시스템
US8889486B2 (en) * 2012-09-05 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for package on package structures
KR20230057648A (ko) * 2021-10-22 2023-05-02 삼성전자주식회사 반도체 장치, 반도체 패키지, 및 반도체 패키지의 제조 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06127518A (ja) * 1992-10-16 1994-05-10 Tomoegawa Paper Co Ltd 半導体装置の樹脂封止方法
US6260264B1 (en) * 1997-12-08 2001-07-17 3M Innovative Properties Company Methods for making z-axis electrical connections
JP2000286302A (ja) * 1999-03-31 2000-10-13 Towa Corp 半導体チップ組立方法及び組立装置
JP2001053112A (ja) * 1999-08-17 2001-02-23 Mitsubishi Electric Corp 回路基体の接続方法および複合回路基体
JP3905467B2 (ja) * 2000-03-23 2007-04-18 長瀬産業株式会社 半導体デバイス封止装置及び封止方法
JP4441090B2 (ja) * 2000-10-11 2010-03-31 三井化学株式会社 プリント配線基板に半導体チップを装着する方法
JP4206631B2 (ja) 2000-10-12 2009-01-14 住友ベークライト株式会社 熱硬化性液状封止樹脂組成物、半導体素子の組立方法及び半導体装置
JP3818124B2 (ja) * 2001-10-25 2006-09-06 凸版印刷株式会社 半導体集積回路装置およびその製造方法
JP3717899B2 (ja) * 2002-04-01 2005-11-16 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
JP2008274080A (ja) * 2007-04-27 2008-11-13 Shin Etsu Chem Co Ltd 液状エポキシ樹脂組成物及び半導体装置
JP2008300500A (ja) * 2007-05-30 2008-12-11 Panasonic Corp 半導体装置およびその製造方法
JP2009009994A (ja) * 2007-06-26 2009-01-15 Shinko Electric Ind Co Ltd 半導体装置およびその製造方法
JP5024117B2 (ja) * 2007-10-09 2012-09-12 日立化成工業株式会社 回路部材の実装方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8403080B2 (en) 2004-04-28 2013-03-26 Baker Hughes Incorporated Earth-boring tools and components thereof including material having hard phase in a metallic binder, and metallic binder compositions for use in forming such tools and components
US9428822B2 (en) 2004-04-28 2016-08-30 Baker Hughes Incorporated Earth-boring tools and components thereof including material having hard phase in a metallic binder, and metallic binder compositions for use in forming such tools and components
US8490674B2 (en) 2010-05-20 2013-07-23 Baker Hughes Incorporated Methods of forming at least a portion of earth-boring tools
US8905117B2 (en) 2010-05-20 2014-12-09 Baker Hughes Incoporated Methods of forming at least a portion of earth-boring tools, and articles formed by such methods
US8978734B2 (en) 2010-05-20 2015-03-17 Baker Hughes Incorporated Methods of forming at least a portion of earth-boring tools, and articles formed by such methods
US9790745B2 (en) 2010-05-20 2017-10-17 Baker Hughes Incorporated Earth-boring tools comprising eutectic or near-eutectic compositions

Also Published As

Publication number Publication date
US20090258460A1 (en) 2009-10-15
US8138018B2 (en) 2012-03-20
JP2009259924A (ja) 2009-11-05

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