JP5060684B2 - 半導体ウェーハを検査するシステム及び方法 - Google Patents

半導体ウェーハを検査するシステム及び方法 Download PDF

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Publication number
JP5060684B2
JP5060684B2 JP2000546223A JP2000546223A JP5060684B2 JP 5060684 B2 JP5060684 B2 JP 5060684B2 JP 2000546223 A JP2000546223 A JP 2000546223A JP 2000546223 A JP2000546223 A JP 2000546223A JP 5060684 B2 JP5060684 B2 JP 5060684B2
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inspection
wafer
semiconductor wafer
defect
fourier
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JP2002513204A (ja
JP2002513204A5 (enExample
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ローゼンガウス・エリーザー
ランゲ・スティーブン・アール．
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95623—Inspecting patterns on the surface of objects using a spatial filtering method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Image Input (AREA)
JP2000546223A 1998-04-30 1999-04-30 半導体ウェーハを検査するシステム及び方法 Expired - Lifetime JP5060684B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/070,437 US6020957A (en) 1998-04-30 1998-04-30 System and method for inspecting semiconductor wafers
US09/070,437 1998-04-30
PCT/US1999/009555 WO1999056113A1 (en) 1998-04-30 1999-04-30 A system and method for inspecting semiconductor wafers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010131351A Division JP5663207B2 (ja) 1998-04-30 2010-06-08 モジュラ光学検査システム

Publications (3)

Publication Number Publication Date
JP2002513204A JP2002513204A (ja) 2002-05-08
JP2002513204A5 JP2002513204A5 (enExample) 2006-06-22
JP5060684B2 true JP5060684B2 (ja) 2012-10-31

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JP2000546223A Expired - Lifetime JP5060684B2 (ja) 1998-04-30 1999-04-30 半導体ウェーハを検査するシステム及び方法
JP2010131351A Expired - Lifetime JP5663207B2 (ja) 1998-04-30 2010-06-08 モジュラ光学検査システム

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JP2010131351A Expired - Lifetime JP5663207B2 (ja) 1998-04-30 2010-06-08 モジュラ光学検査システム

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US (2) US6020957A (enExample)
EP (1) EP1075652B1 (enExample)
JP (2) JP5060684B2 (enExample)
AU (1) AU3875899A (enExample)
WO (1) WO1999056113A1 (enExample)

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KR101961900B1 (ko) 2012-06-26 2019-03-26 케이엘에이-텐코 코포레이션 웨이퍼 조사 툴들을 위한 다이오드 레이저 기반 광대역 광원들
KR20190032643A (ko) * 2012-06-26 2019-03-27 케이엘에이-텐코 코포레이션 웨이퍼 조사 툴들을 위한 다이오드 레이저 기반 광대역 광원들
KR102091987B1 (ko) 2012-06-26 2020-03-20 케이엘에이 코포레이션 웨이퍼 조사 툴들을 위한 다이오드 레이저 기반 광대역 광원들

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EP1075652B1 (en) 2011-07-13
WO1999056113A1 (en) 1999-11-04
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US6791680B1 (en) 2004-09-14

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