JP5038341B2 - 有機電界発光表示装置の配線修理構造及びその修理方法 - Google Patents
有機電界発光表示装置の配線修理構造及びその修理方法 Download PDFInfo
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- 230000008439 repair process Effects 0.000 title claims description 85
- 238000000034 method Methods 0.000 title claims description 27
- 230000007547 defect Effects 0.000 claims description 41
- 230000002457 bidirectional effect Effects 0.000 claims description 11
- 230000002950 deficient Effects 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/08—Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
- H01L2027/11868—Macro-architecture
- H01L2027/11874—Layout specification, i.e. inner core region
- H01L2027/11875—Wiring region, routing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Dropが発生する。このような電圧降下IR Dropは、第1電源線PLmを経由する長さが長くなるほど、深刻になる。これにより、各画素には、その位置に応じて互いに異なる大きさの第1画素電源ELVDDが供給されることになる。特に、有機電界発光表示装置が大型化するほど、第1画素電源ELVDDの電圧降下による輝度偏差によって画質が不均一になり得る。
Dropを緩和させることができる。
まず、図3Aを参照すれば、第1配線20とのショート欠陥部分が残りの部分と断絶されるように第2配線40を切断する。このとき、微細調整が可能なレーザなどを用いれば、第2配線40を容易に切断できる。
40 第2配線
RP1 第1リペアパターン
Claims (11)
- 第1及び第2配線の間で発生したショート欠陥を修理する有機電界発光表示装置の配線修理構造において、
前記第1配線とのショート欠陥部分が切断されて、切断された部分が残りの部分と断絶された第2配線と、
前記第2配線と隣接するように配置され、前記ショート欠陥部分と隣接した一領域が切断されて、切断された部分が残りの部分と断絶された第3配線と、
前記第2配線が前記第3配線の切断された部分を通じて電気的な連結状態を維持するように前記第2配線の残りの部分と前記第3配線の切断された部分を電気的に連結する第1リペアパターンと、
前記第3配線と隣接するように配置された第4配線と、
前記第4配線と前記第3配線の残りの部分とを電気的に連結する第2リペアパターンと、
を備える有機電界発光表示装置の配線修理構造。 - 前記第3配線は、両方向から信号の供給を受ける両方向配線であることを特徴とする請求項1に記載の有機電界発光表示装置の配線修理構造。
- 前記第1配線と前記第2及び第3配線は絶縁膜を介在し、互いに交差するように配置され、
前記第1配線は前記絶縁膜の下部に配置され、前記第2及び第3配線は前記絶縁膜の上部に並んで配置されることを特徴とする請求項1に記載の有機電界発光表示装置の配線修理構造。 - 前記第4配線は、前記第3配線と隣接するように配置され、前記第3配線の切断された部分と隣接した一領域が切断されて、切断された部分が残りの部分と断絶され、
前記第2リペアパターンは、前記第3配線が前記第4配線の切断された部分を通じて電気的な連結状態を維持するように前記第4配線の切断された部分と前記第3配線の残りの部分を電気的に連結することを特徴とする請求項1に記載の有機電界発光表示装置の配線修理構造。 - 前記第4配線は、両方向から信号の供給を受ける両方向配線であることを特徴とする請求項1に記載の有機電界発光表示装置の配線修理構造。
- 前記第4配線が電気的な連結状態を維持するように前記第4配線の残りの部分を互いに電気的に連結する第3リペアパターンを更に備えることを特徴とする請求項1に記載の有機電界発光表示装置の配線修理構造。
- 第1及び第2配線の間で発生したショート欠陥を前記第2配線と隣接した第3配線を用いて修理する有機電界発光表示装置の配線修理方法において、
前記第1配線とのショート欠陥部分が残りの部分と断絶されるように前記第2配線を切断し、前記ショート欠陥部分と隣接した前記第3配線の一領域を切断して切断された部分を前記第3配線の残りの部分と断絶させる段階と、
前記ショート欠陥部分を除いた前記第2配線の残りの部分を前記第3配線の切断された部分と電気的に連結する第1リペアパターンを形成して前記第2配線の電気的な連結状態を修理する段階と、
前記第3配線と隣接した第4配線を用いて前記第3配線の電気的な連結状態を修理する段階と、
を含む有機電界発光表示装置の配線修理方法。 - 前記有機電界発光表示装置において、前記第3配線の両側から前記切断された部分の方向に信号が印加されることを特徴とする請求項7に記載の有機電界発光表示装置の配線修理方法。
- 前記第3配線の連結状態を修理する段階は、
前記第3配線の切断された部分と隣接した前記第4配線の一領域を切断して、切断された部分を前記第4配線の残りの部分と断絶させる段階と、
前記第3配線の残りの部分と前記第4配線の切断された部分を電気的に連結する第2リペアパターンを形成する段階と、
を含むことを特徴とする請求項7に記載の有機電界発光表示装置の配線修理方法。 - 前記有機電界発光表示装置において、前記第4配線の両側から前記切断された部分の方向に信号が印加されることを特徴とする請求項9に記載の有機電界発光表示装置の配線修理方法。
- 前記第4配線の残りの部分を互いに電気的に連結する第3リペアパターンを形成して前記第4配線の電気的な連結状態を修理する段階を更に含むことを特徴とする請求項9に記載の有機電界発光表示装置の配線修理方法。
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KR10-2008-0079877 | 2008-08-14 | ||
KR1020080079877A KR100986845B1 (ko) | 2008-08-14 | 2008-08-14 | 유기전계발광 표시장치의 배선수리구조 및 그 수리방법 |
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CN (1) | CN101651129B (ja) |
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TWI331247B (en) * | 2007-12-13 | 2010-10-01 | Au Optronics Corp | Pixel sturctur and repairing method thereof |
JP5245879B2 (ja) * | 2008-03-26 | 2013-07-24 | ソニー株式会社 | 画像表示装置及び短絡事故の修復方法 |
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TWI409945B (zh) | 2013-09-21 |
US8227977B2 (en) | 2012-07-24 |
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JP2010044353A (ja) | 2010-02-25 |
TW201013923A (en) | 2010-04-01 |
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US20100039016A1 (en) | 2010-02-18 |
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