JP5036840B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP5036840B2
JP5036840B2 JP2010070230A JP2010070230A JP5036840B2 JP 5036840 B2 JP5036840 B2 JP 5036840B2 JP 2010070230 A JP2010070230 A JP 2010070230A JP 2010070230 A JP2010070230 A JP 2010070230A JP 5036840 B2 JP5036840 B2 JP 5036840B2
Authority
JP
Japan
Prior art keywords
pad electrode
light
electrode
light emitting
convex portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010070230A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011204875A5 (enExample
JP2011204875A (ja
Inventor
孝信 鎌倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2010070230A priority Critical patent/JP5036840B2/ja
Priority to TW099130203A priority patent/TWI479692B/zh
Priority to US12/881,437 priority patent/US20110233599A1/en
Publication of JP2011204875A publication Critical patent/JP2011204875A/ja
Publication of JP2011204875A5 publication Critical patent/JP2011204875A5/ja
Application granted granted Critical
Publication of JP5036840B2 publication Critical patent/JP5036840B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Led Devices (AREA)
JP2010070230A 2010-03-25 2010-03-25 発光素子 Expired - Fee Related JP5036840B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010070230A JP5036840B2 (ja) 2010-03-25 2010-03-25 発光素子
TW099130203A TWI479692B (zh) 2010-03-25 2010-09-07 發光裝置
US12/881,437 US20110233599A1 (en) 2010-03-25 2010-09-14 Light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010070230A JP5036840B2 (ja) 2010-03-25 2010-03-25 発光素子

Publications (3)

Publication Number Publication Date
JP2011204875A JP2011204875A (ja) 2011-10-13
JP2011204875A5 JP2011204875A5 (enExample) 2012-01-26
JP5036840B2 true JP5036840B2 (ja) 2012-09-26

Family

ID=44655349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010070230A Expired - Fee Related JP5036840B2 (ja) 2010-03-25 2010-03-25 発光素子

Country Status (3)

Country Link
US (1) US20110233599A1 (enExample)
JP (1) JP5036840B2 (enExample)
TW (1) TWI479692B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113594326B (zh) * 2021-07-29 2022-12-20 厦门三安光电有限公司 一种发光二极管、发光模块及显示装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785253B2 (ja) * 1993-03-19 1998-08-13 日亜化学工業株式会社 窒化ガリウム系化合物半導体のｐ型化方法
US5760423A (en) * 1996-11-08 1998-06-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device
JPH1168504A (ja) * 1997-08-11 1999-03-09 Murata Mfg Co Ltd 表面波装置
EP1928034A3 (en) * 1997-12-15 2008-06-18 Philips Lumileds Lighting Company LLC Light emitting device
JP3469484B2 (ja) * 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
TW437094B (en) * 1999-06-11 2001-05-28 Chi Mei Electronic Corp Process for thin film transistor with composite metal structure
TW451447B (en) * 1999-12-31 2001-08-21 Samsung Electronics Co Ltd Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
US6959856B2 (en) * 2003-01-10 2005-11-01 Samsung Electronics Co., Ltd. Solder bump structure and method for forming a solder bump
EP1667241B1 (en) * 2003-08-19 2016-12-07 Nichia Corporation Semiconductor light emitting diode and method of manufacturing the same
KR100601945B1 (ko) * 2004-03-10 2006-07-14 삼성전자주식회사 탑에미트형 질화물계 발광소자 및 그 제조방법
JP4632690B2 (ja) * 2004-05-11 2011-02-16 スタンレー電気株式会社 半導体発光装置とその製造方法
JP4301136B2 (ja) * 2004-10-18 2009-07-22 サンケン電気株式会社 半導体発光素子およびその製造方法
JP2006128227A (ja) * 2004-10-26 2006-05-18 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
JP2006324324A (ja) * 2005-05-17 2006-11-30 Sumitomo Electric Ind Ltd 発光装置、発光装置の製造方法および窒化物半導体基板
WO2007004701A1 (en) * 2005-07-04 2007-01-11 Showa Denko K.K. Gallium nitride-based compound semiconductor lihgt-emitting device
JP2007281037A (ja) * 2006-04-03 2007-10-25 Dowa Holdings Co Ltd 半導体発光素子及びその製造方法
JP2008072039A (ja) * 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd 発光素子
JP5198793B2 (ja) * 2007-05-10 2013-05-15 ソニー株式会社 半導体素子およびその製造方法
JP2008294188A (ja) * 2007-05-24 2008-12-04 Toyoda Gosei Co Ltd 半導体発光素子及びその製造方法
JP5048392B2 (ja) * 2007-05-25 2012-10-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP4840345B2 (ja) * 2007-12-03 2011-12-21 住友電気工業株式会社 エピタキシャルウエハ、エピタキシャルウエハを作製する方法
JP2009260237A (ja) * 2008-01-24 2009-11-05 Showa Denko Kk 化合物半導体発光素子及びその製造方法、化合物半導体発光素子用導電型透光性電極、ランプ、電子機器並びに機械装置
JP5651288B2 (ja) * 2008-03-25 2015-01-07 株式会社東芝 半導体発光素子及びその製造方法
JP5434288B2 (ja) * 2009-06-12 2014-03-05 豊田合成株式会社 半導体発光素子、半導体発光素子の製造方法、半導体発光素子を備えたランプ、照明装置および電子機器
JP5159731B2 (ja) * 2009-09-03 2013-03-13 株式会社東芝 蛍光体およびこれを用いた画像表示装置
JP2011119333A (ja) * 2009-12-01 2011-06-16 Sharp Corp 窒化物半導体発光素子

Also Published As

Publication number Publication date
TW201133941A (en) 2011-10-01
TWI479692B (zh) 2015-04-01
JP2011204875A (ja) 2011-10-13
US20110233599A1 (en) 2011-09-29

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