TWI479692B - 發光裝置 - Google Patents

發光裝置 Download PDF

Info

Publication number
TWI479692B
TWI479692B TW099130203A TW99130203A TWI479692B TW I479692 B TWI479692 B TW I479692B TW 099130203 A TW099130203 A TW 099130203A TW 99130203 A TW99130203 A TW 99130203A TW I479692 B TWI479692 B TW I479692B
Authority
TW
Taiwan
Prior art keywords
electrode
transparent electrode
shaped
illuminating device
disposed
Prior art date
Application number
TW099130203A
Other languages
English (en)
Chinese (zh)
Other versions
TW201133941A (en
Inventor
鎌倉孝信
Original Assignee
東芝股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝股份有限公司 filed Critical 東芝股份有限公司
Publication of TW201133941A publication Critical patent/TW201133941A/zh
Application granted granted Critical
Publication of TWI479692B publication Critical patent/TWI479692B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Led Devices (AREA)
TW099130203A 2010-03-25 2010-09-07 發光裝置 TWI479692B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010070230A JP5036840B2 (ja) 2010-03-25 2010-03-25 発光素子

Publications (2)

Publication Number Publication Date
TW201133941A TW201133941A (en) 2011-10-01
TWI479692B true TWI479692B (zh) 2015-04-01

Family

ID=44655349

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099130203A TWI479692B (zh) 2010-03-25 2010-09-07 發光裝置

Country Status (3)

Country Link
US (1) US20110233599A1 (enExample)
JP (1) JP5036840B2 (enExample)
TW (1) TWI479692B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113594326B (zh) * 2021-07-29 2022-12-20 厦门三安光电有限公司 一种发光二极管、发光模块及显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW437094B (en) * 1999-06-11 2001-05-28 Chi Mei Electronic Corp Process for thin film transistor with composite metal structure
TW451447B (en) * 1999-12-31 2001-08-21 Samsung Electronics Co Ltd Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
US20050179130A1 (en) * 2003-08-19 2005-08-18 Hisanori Tanaka Semiconductor device
US20050253161A1 (en) * 2004-05-11 2005-11-17 Stanley Electric Co., Ltd. Semiconductor light emitting device on insulating substrate and its manufacture method
US20090078951A1 (en) * 2005-07-04 2009-03-26 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785253B2 (ja) * 1993-03-19 1998-08-13 日亜化学工業株式会社 窒化ガリウム系化合物半導体のｐ型化方法
US5760423A (en) * 1996-11-08 1998-06-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device
JPH1168504A (ja) * 1997-08-11 1999-03-09 Murata Mfg Co Ltd 表面波装置
EP0926744B8 (en) * 1997-12-15 2008-05-21 Philips Lumileds Lighting Company, LLC. Light emitting device
JP3469484B2 (ja) * 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
US6959856B2 (en) * 2003-01-10 2005-11-01 Samsung Electronics Co., Ltd. Solder bump structure and method for forming a solder bump
KR100601945B1 (ko) * 2004-03-10 2006-07-14 삼성전자주식회사 탑에미트형 질화물계 발광소자 및 그 제조방법
JP4301136B2 (ja) * 2004-10-18 2009-07-22 サンケン電気株式会社 半導体発光素子およびその製造方法
JP2006128227A (ja) * 2004-10-26 2006-05-18 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
JP2006324324A (ja) * 2005-05-17 2006-11-30 Sumitomo Electric Ind Ltd 発光装置、発光装置の製造方法および窒化物半導体基板
JP2007281037A (ja) * 2006-04-03 2007-10-25 Dowa Holdings Co Ltd 半導体発光素子及びその製造方法
JP2008072039A (ja) * 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd 発光素子
JP5198793B2 (ja) * 2007-05-10 2013-05-15 ソニー株式会社 半導体素子およびその製造方法
JP2008294188A (ja) * 2007-05-24 2008-12-04 Toyoda Gosei Co Ltd 半導体発光素子及びその製造方法
JP5048392B2 (ja) * 2007-05-25 2012-10-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP4840345B2 (ja) * 2007-12-03 2011-12-21 住友電気工業株式会社 エピタキシャルウエハ、エピタキシャルウエハを作製する方法
JP2009260237A (ja) * 2008-01-24 2009-11-05 Showa Denko Kk 化合物半導体発光素子及びその製造方法、化合物半導体発光素子用導電型透光性電極、ランプ、電子機器並びに機械装置
JP5651288B2 (ja) * 2008-03-25 2015-01-07 株式会社東芝 半導体発光素子及びその製造方法
JP5434288B2 (ja) * 2009-06-12 2014-03-05 豊田合成株式会社 半導体発光素子、半導体発光素子の製造方法、半導体発光素子を備えたランプ、照明装置および電子機器
JP5159731B2 (ja) * 2009-09-03 2013-03-13 株式会社東芝 蛍光体およびこれを用いた画像表示装置
JP2011119333A (ja) * 2009-12-01 2011-06-16 Sharp Corp 窒化物半導体発光素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW437094B (en) * 1999-06-11 2001-05-28 Chi Mei Electronic Corp Process for thin film transistor with composite metal structure
TW451447B (en) * 1999-12-31 2001-08-21 Samsung Electronics Co Ltd Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
US20050179130A1 (en) * 2003-08-19 2005-08-18 Hisanori Tanaka Semiconductor device
US20050253161A1 (en) * 2004-05-11 2005-11-17 Stanley Electric Co., Ltd. Semiconductor light emitting device on insulating substrate and its manufacture method
US20090078951A1 (en) * 2005-07-04 2009-03-26 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device

Also Published As

Publication number Publication date
JP2011204875A (ja) 2011-10-13
TW201133941A (en) 2011-10-01
US20110233599A1 (en) 2011-09-29
JP5036840B2 (ja) 2012-09-26

Similar Documents

Publication Publication Date Title
TWI244221B (en) Micro-reflector containing flip-chip light emitting device
TWI813171B (zh) 發光元件
JP5037013B2 (ja) 窒化物半導体発光素子
JP5251038B2 (ja) 発光装置
US8614109B2 (en) Semiconductor light-emitting apparatus and method of fabricating the same
US8647900B2 (en) Micro-structure phosphor coating
CN100388515C (zh) 半导体发光器件及其制造方法
TWI452729B (zh) 發光裝置
WO2010041370A1 (ja) 窒化物半導体発光ダイオード
JP2011060966A (ja) 発光装置
KR101228130B1 (ko) 반도체 발광 소자 및 그 제조 방법, 발광장치
CN114864788A (zh) 半导体发光装置
JP2012038950A (ja) 半導体発光素子及びその製造方法
US10707395B2 (en) Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
TWI648870B (zh) 發光二極體晶片
JP7189441B2 (ja) 実装方法
TWI548114B (zh) 覆晶式半導體發光元件及其製造方法
CN113644180B (zh) 倒装led芯片及其制备方法
TWI479692B (zh) 發光裝置
JP2006128659A (ja) 窒化物系半導体発光素子及びその製造方法
WO2018036513A1 (zh) 氮化物半导体元件及其制造方法与所应用的封装结构
JP6067408B2 (ja) フリップチップ型半導体発光素子、半導体装置及びその製造方法
JP5123221B2 (ja) 発光装置
CN110571324A (zh) 发光二极管装置
CN111200049A (zh) 发光元件封装件

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees