JP2011204875A5 - - Google Patents

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Publication number
JP2011204875A5
JP2011204875A5 JP2010070230A JP2010070230A JP2011204875A5 JP 2011204875 A5 JP2011204875 A5 JP 2011204875A5 JP 2010070230 A JP2010070230 A JP 2010070230A JP 2010070230 A JP2010070230 A JP 2010070230A JP 2011204875 A5 JP2011204875 A5 JP 2011204875A5
Authority
JP
Japan
Prior art keywords
luminance
light emitting
pad electrode
emitting device
light transmittance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010070230A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011204875A (ja
JP5036840B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010070230A priority Critical patent/JP5036840B2/ja
Priority claimed from JP2010070230A external-priority patent/JP5036840B2/ja
Priority to TW099130203A priority patent/TWI479692B/zh
Priority to US12/881,437 priority patent/US20110233599A1/en
Publication of JP2011204875A publication Critical patent/JP2011204875A/ja
Publication of JP2011204875A5 publication Critical patent/JP2011204875A5/ja
Application granted granted Critical
Publication of JP5036840B2 publication Critical patent/JP5036840B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010070230A 2010-03-25 2010-03-25 発光素子 Expired - Fee Related JP5036840B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010070230A JP5036840B2 (ja) 2010-03-25 2010-03-25 発光素子
TW099130203A TWI479692B (zh) 2010-03-25 2010-09-07 發光裝置
US12/881,437 US20110233599A1 (en) 2010-03-25 2010-09-14 Light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010070230A JP5036840B2 (ja) 2010-03-25 2010-03-25 発光素子

Publications (3)

Publication Number Publication Date
JP2011204875A JP2011204875A (ja) 2011-10-13
JP2011204875A5 true JP2011204875A5 (enExample) 2012-01-26
JP5036840B2 JP5036840B2 (ja) 2012-09-26

Family

ID=44655349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010070230A Expired - Fee Related JP5036840B2 (ja) 2010-03-25 2010-03-25 発光素子

Country Status (3)

Country Link
US (1) US20110233599A1 (enExample)
JP (1) JP5036840B2 (enExample)
TW (1) TWI479692B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113594326B (zh) * 2021-07-29 2022-12-20 厦门三安光电有限公司 一种发光二极管、发光模块及显示装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785253B2 (ja) * 1993-03-19 1998-08-13 日亜化学工業株式会社 窒化ガリウム系化合物半導体のｐ型化方法
US5760423A (en) * 1996-11-08 1998-06-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device
JPH1168504A (ja) * 1997-08-11 1999-03-09 Murata Mfg Co Ltd 表面波装置
EP0926744B8 (en) * 1997-12-15 2008-05-21 Philips Lumileds Lighting Company, LLC. Light emitting device
JP3469484B2 (ja) * 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
TW437094B (en) * 1999-06-11 2001-05-28 Chi Mei Electronic Corp Process for thin film transistor with composite metal structure
TW451447B (en) * 1999-12-31 2001-08-21 Samsung Electronics Co Ltd Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same
US6959856B2 (en) * 2003-01-10 2005-11-01 Samsung Electronics Co., Ltd. Solder bump structure and method for forming a solder bump
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
KR100601945B1 (ko) * 2004-03-10 2006-07-14 삼성전자주식회사 탑에미트형 질화물계 발광소자 및 그 제조방법
JP4632690B2 (ja) * 2004-05-11 2011-02-16 スタンレー電気株式会社 半導体発光装置とその製造方法
JP4301136B2 (ja) * 2004-10-18 2009-07-22 サンケン電気株式会社 半導体発光素子およびその製造方法
JP2006128227A (ja) * 2004-10-26 2006-05-18 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
JP2006324324A (ja) * 2005-05-17 2006-11-30 Sumitomo Electric Ind Ltd 発光装置、発光装置の製造方法および窒化物半導体基板
US7759690B2 (en) * 2005-07-04 2010-07-20 Showa Denko K.K. Gallium nitride-based compound semiconductor light-emitting device
JP2007281037A (ja) * 2006-04-03 2007-10-25 Dowa Holdings Co Ltd 半導体発光素子及びその製造方法
JP2008072039A (ja) * 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd 発光素子
JP5198793B2 (ja) * 2007-05-10 2013-05-15 ソニー株式会社 半導体素子およびその製造方法
JP2008294188A (ja) * 2007-05-24 2008-12-04 Toyoda Gosei Co Ltd 半導体発光素子及びその製造方法
JP5048392B2 (ja) * 2007-05-25 2012-10-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP4840345B2 (ja) * 2007-12-03 2011-12-21 住友電気工業株式会社 エピタキシャルウエハ、エピタキシャルウエハを作製する方法
JP2009260237A (ja) * 2008-01-24 2009-11-05 Showa Denko Kk 化合物半導体発光素子及びその製造方法、化合物半導体発光素子用導電型透光性電極、ランプ、電子機器並びに機械装置
JP5651288B2 (ja) * 2008-03-25 2015-01-07 株式会社東芝 半導体発光素子及びその製造方法
JP5434288B2 (ja) * 2009-06-12 2014-03-05 豊田合成株式会社 半導体発光素子、半導体発光素子の製造方法、半導体発光素子を備えたランプ、照明装置および電子機器
JP5159731B2 (ja) * 2009-09-03 2013-03-13 株式会社東芝 蛍光体およびこれを用いた画像表示装置
JP2011119333A (ja) * 2009-12-01 2011-06-16 Sharp Corp 窒化物半導体発光素子

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