JP5016210B2 - 圧電薄膜積層トランス及びその製造方法 - Google Patents

圧電薄膜積層トランス及びその製造方法 Download PDF

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Publication number
JP5016210B2
JP5016210B2 JP2005270812A JP2005270812A JP5016210B2 JP 5016210 B2 JP5016210 B2 JP 5016210B2 JP 2005270812 A JP2005270812 A JP 2005270812A JP 2005270812 A JP2005270812 A JP 2005270812A JP 5016210 B2 JP5016210 B2 JP 5016210B2
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thin film
piezoelectric
piezoelectric thin
film
substrate
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Japanese (ja)
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JP2007081334A (ja
JP2007081334A5 (enExample
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博 大木
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Sharp Corp
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Sharp Corp
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JP2005270812A 2005-09-16 2005-09-16 圧電薄膜積層トランス及びその製造方法 Expired - Fee Related JP5016210B2 (ja)

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JP2005270812A JP5016210B2 (ja) 2005-09-16 2005-09-16 圧電薄膜積層トランス及びその製造方法

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JP2005270812A JP5016210B2 (ja) 2005-09-16 2005-09-16 圧電薄膜積層トランス及びその製造方法

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JP2007081334A JP2007081334A (ja) 2007-03-29
JP2007081334A5 JP2007081334A5 (enExample) 2008-01-17
JP5016210B2 true JP5016210B2 (ja) 2012-09-05

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101632052B1 (ko) * 2014-09-16 2016-06-20 국방과학연구소 압전소자의 제조방법
JP2017152575A (ja) * 2016-02-25 2017-08-31 京セラ株式会社 積層型圧電素子およびこれを備えた音響発生器、電子機器
JP7071172B2 (ja) * 2017-06-22 2022-05-18 太陽誘電株式会社 積層圧電素子、圧電振動装置、及び電子機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2643810B2 (ja) * 1993-12-20 1997-08-20 日本電気株式会社 圧電磁器トランスとその駆動方法
JP2002368299A (ja) * 2001-06-12 2002-12-20 Nissin Electric Co Ltd 圧電トランスの実装構造
JP4662112B2 (ja) * 2001-09-05 2011-03-30 独立行政法人産業技術総合研究所 強誘電体薄膜及びその製造方法
JP3906809B2 (ja) * 2002-04-08 2007-04-18 日本電気株式会社 線路素子及び半導体回路
JP2005005682A (ja) * 2003-05-16 2005-01-06 Matsushita Electric Ind Co Ltd 圧電トランスとそれを用いた電源回路及び照明装置

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