JP4990121B2 - ガラスフリット、シーリング材形成用の組成物及び発光装置 - Google Patents
ガラスフリット、シーリング材形成用の組成物及び発光装置 Download PDFInfo
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- JP4990121B2 JP4990121B2 JP2007337636A JP2007337636A JP4990121B2 JP 4990121 B2 JP4990121 B2 JP 4990121B2 JP 2007337636 A JP2007337636 A JP 2007337636A JP 2007337636 A JP2007337636 A JP 2007337636A JP 4990121 B2 JP4990121 B2 JP 4990121B2
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
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- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
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- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
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- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
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- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
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Description
実施形態にかかるガラスフリットは、1種以上のイオンを含む酸化物であって、V+4イオンを含む。V+4イオンは、多様な波長の電磁波を吸収でき、V+4イオンを含むガラスフリットは、電磁波の照射によって軟化しうる。例えば、V+4イオンは、810nmのレーザ光を吸収できる。
前述のようなV+4イオンを含むガラスフリットの製造方法の具体例は、次の通りである。
図2は、有機発光素子13の一具体例の断面図を概略的に図示する。さらに具体的に、図2は、能動(AM:Active Matrix type)駆動型有機発光素子13の一具体例の断面図を概略的に図示する。
実施形態にかかる発光装置の製造方法の具体例を、図3ないし図9を用いて以下に説明する。
a)V+4イオンを含むガラスフリットを含むシーリング材形成用の組成物を利用する方法;
b)シーリング材形成用の組成物に、V+5イオンをV+4イオンに還元させる還元剤を添加し、熱処理時にV+5イオンをV+4イオンを還元させる方法;
c)還元雰囲気下で熱処理し、シーリング材形成用の組成物のうちV+5イオンをV+4イオンに還元させる方法。
A.ガラスフリットの製造
V2O5 29.2g、ZnO 5.2g、BaO 14.7g及びTeO 250.8gを混合して白金ルツボに入れ、電気炉で約1時間800℃で熱処理した。熱処理の結果として得た溶融物を冷却させた後、ボールミル(Ball-mill)を利用し、平均粒径(D50)が2μmであり、平均粒径(DMAX)が10μmであるガラスフリットを得た。ガラスフリットは、V+5イオン、Zn+2イオン、Ba+2イオン及びTe+4イオンを含む。
Aから得たシーリング材形成用の組成物を、スクリーンプリンティング法を利用してガラス基板上部に、幅600μm、厚さ30μmに塗布した後、これを420℃の温度のN2雰囲気で4時間熱処理した。
実施例1のAに記載されたような方法で、シーリング材形成用の組成物を製造した。その後、実施例1のBのうち、N2雰囲気の代わりに大気(エアー)雰囲気下で熱処理した点を除いて、実施例1のBに記載されたような方法で、シーリング材形成用の組成物を熱処理した。
実施例1によってN2雰囲気下で熱処理されたシーリング材形成用の組成物、及び比較例1によって大気雰囲気下で熱処理されたシーリング材形成用の組成物に対し、透光率を評価した。透光率は、400nmから1,100nmまでの波長の光を、それぞれ熱処理されたシーリング材形成用の組成物の塗布されたガラス基板を介して照射した後、その透過率を、紫外可視近赤外分光光度計(UV−VIS Spectrometer装置)を利用して測定することによって評価した。その結果を図10に示す。図10によれば、実施例1から得た熱処理されたシーリング材形成用の組成物(N2雰囲気下で熱処理)に対する透光率は、810nm波長で17.5%であったが、比較例1から得た熱処理されたシーリング材形成用の組成物(大気雰囲気下で熱処理)に対する透光率は、810nm波長で60.5%であることを確認できる。すなわち、実施例1から得たN2雰囲気下で熱処理されたシーリング材形成用の組成物は、可視光線ないし近赤外線領域の光を効果的に吸収することが分かる。これはN2雰囲気下の熱処理結果、V+5イオンがV+4イオンに還元されたためであると分析される。
有機発光素子(本願出願人であるSDI社製作)を具備した第1ガラス基板を用意した。次に、実施例1のAに示すようなシーリング材形成用の組成物を用意した後、実施例1のBに記載されたと同一の方法を利用し、これを封止基板である第2ガラス基板に塗布した。シーリング材形成用の組成物が塗布された第2ガラス基板を420℃、N2雰囲気下で4時間熱処理した。
実施例2のうち、シーリング材形成用の組成物をN2雰囲気の代わりに、大気雰囲気下で熱処理した点を除いて、実施例2に記載された方法と同じ過程を行った。その結果、810nmのレーザ照射によるシーリング材形成が不可能であり、第1ガラス基板及び第2ガラス基板が密封されなかった。特定理論に限定されないが、大気雰囲気下の熱処理によっては、十分な量のV+4イオンが生成されず、レーザ光吸収が効果的に起こらなかったためであると分析される。
実施例2のうち、第2基板にシーリング材形成用の組成物の代わりに、有機シーラント(Sealant)であるエポキシ樹脂を塗布した後、これを硬化させシーリング材を形成したという点を除いて、実施例2に記載された方法と同じ方法で有機発光装置を製作した。
実施例2及び比較例3から得た有機発光装置の寿命を評価し、図12及び図13にそれぞれの結果を示した。具体的に、85%の相対湿度及び85℃の温度条件下で、300時間放置した後で駆動評価を行うことにより、有機発光装置の寿命を評価した。図12は、実施例2の有機発光装置を表したものであり、図13に表した比較例3の有機発光装置とは異なり、実質的に暗点が発生していないことを確認できる。これは、実施例2の有機発光装置のシーリング材により、水分による劣化がほとんど起こっていないためであると分析される。これから、実施形態にかかる発光装置は、高寿命性を有することを確認できる。
11,21…第1基板
13…有機発光素子
23a〜23f…有機発光素子
15,25…第2基板
18…シーリング材
28a〜28f…シーリング材
27…シーリング材形成用の組成物
27ax,27bx,27cx…熱処理されたシーリング材形成用の組成物
29…電磁波
41…バッファ層
42…半導体層
43…ゲート絶縁膜
44…ゲート電極
45…層間絶縁膜
46…ソース電極
47…ドレイン電極
48…パッシベーション膜
49…画素定義膜
50…有機発光素子
51…第1電極
52…有機層
53…第2電極
Claims (16)
- 第1基板と、
第2基板と、
前記第1基板と前記第2基板との間に備わった発光素子と、
前記第1基板と前記第2基板とを接着させ、前記発光素子を密封させるシーリング材と
を具備した発光装置であって、
前記シーリング材が、
V+5イオンが還元雰囲気下で熱処理されることによって還元されたV+4イオンと
V+5イオン、Ba+2イオン、Zn+2イオン及びTe+4イオンと
を含み、
前記熱処理は、シーリング材形成用組成物を前記第1基板または第2基板に塗布した後に行われることを特徴とする発光装置。 - 前記シーリング材が200nmないし10,000nm範囲の電磁波を吸収することによって形成されたことを特徴とする請求項1に記載の発光装置。
- 前記シーリング材がレーザまたは光ランプを利用して形成されたことを特徴とする請求項1または2に記載の発光装置。
- 前記シーリング材がフィラをさらに含むことを特徴とする請求項1ないし3のうちいずれか1項に記載の発光装置。
- 前記フィラがリン酸ジルコニウム・タングステン系フィラ、リン酸ジルコニウム系フィラ、ジルコニウム系フィラ、ユークリプタイト系フィラ、コージエライト系フィラ、アルミナ、シリカ、ケイ酸亜鉛及びチタン酸アルミニウムからなる群から選択された一つ以上であることを特徴とする請求項4に記載の発光装置。
- 前記フィラの平均粒径(D50)が0.1μmないし30μmであることを特徴とする請求項4または5に記載の発光装置。
- 前記フィラの平均粒径(DMAX)が1μmないし150μmであることを特徴とする請求項4または5に記載の発光装置。
- 前記シーリング材が、Fe+3イオン、Cu+2イオン、Nd+2イオン、K+1イオン、Sb+3イオン、P+5イオン、Ti+2イオン、Al+3イオン、B+3イオン、W+6イオン、Sn+2イオン、Bi+3イオン、Ca+2イオン、Si+4イオン、Zr+4イオン及びMg+2イオンからなる群から選択された一つ以上のイオンをさらに含むことを特徴とする請求項1ないし7のうちいずれか1項に記載の発光装置。
- 前記還元がV+5イオンをV+4イオンに還元させる還元剤によってさらになされることを特徴とする請求項1ないし8のうちいずれか1項に記載の発光装置。
- 前記還元剤が、Sn+2イオン、Al+3イオン、Mg+2イオン、Cu+2イオン及びZn+2イオンからなる群から選択された一つ以上のイオンを発生させることを特徴とする請求項9に記載の発光装置。
- 前記発光素子が有機発光素子であることを特徴とする請求項1ないし10のうちいずれか1項に記載の発光装置。
- 発光素子が備わった第1基板を用意する段階と、
シーリング材形成用組成物を用意する段階と、
前記シーリング材形成用組成物を第2基板のシーリング材形成領域に提供する段階と、
前記シーリング材形成用組成物が塗布された第2基板を還元雰囲気下で熱処理する段階と、
前記熱処理されたシーリング材形成用組成物及び前記発光素子が前記第1基板と前記第2基板との間に備わるように、前記第1基板と前記第2基板とを合着させる段階と、
前記熱処理されたシーリング材形成用組成物に電磁波ソースを照射することによって、軟化、溶融、または、軟化及び溶融させ、前記第1基板と前記第2基板とを互いに接着させ、前記発光素子を密封させるシーリング材を形成する段階と
を含み、
前記熱処理されたシーリング材形成用組成物は、V +5 イオンが還元雰囲気下で熱処理されることによって還元されたV +4 イオンと、V +5 イオン、Ba +2 イオン、Zn +2 イオン及びTe +4 イオンとを含むガラスフリットを含むことを特徴とする発光装置の製造方法。 - 前記シーリング材形成用組成物がV+5イオンをV+4イオンに還元させる還元剤を含み、前記熱処理の段階で前記還元剤により、V+5イオンがV+4イオンに還元されることを特徴とする請求項12に記載の発光装置の製造方法。
- 前記熱処理の温度が250℃ないし750℃であり、前記熱処理の時間が5分ないし240分であることを特徴とする請求項12ないし13のうちいずれか1項に記載の発光装置の製造方法。
- 前記電磁波ソースが200nmないし10,000nm範囲の電磁波を放出できるレーザまたは光ランプであることを特徴とする請求項12ないし14のうちいずれか1項に記載の発光装置の製造方法。
- 前記還元雰囲気がN2雰囲気または水素雰囲気であることを特徴とする請求項12ないし15のうちいずれか1項に記載の発光装置の製造方法。
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US8716850B2 (en) | 2007-05-18 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7992411B2 (en) * | 2008-05-30 | 2011-08-09 | Corning Incorporated | Method for sintering a frit to a glass plate |
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JP2010176851A (ja) * | 2009-01-27 | 2010-08-12 | Sumitomo Chemical Co Ltd | 表示パネルの製造方法、および表示装置用基板 |
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US8546281B2 (en) | 2013-10-01 |
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