JP4989821B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4989821B2
JP4989821B2 JP2001029215A JP2001029215A JP4989821B2 JP 4989821 B2 JP4989821 B2 JP 4989821B2 JP 2001029215 A JP2001029215 A JP 2001029215A JP 2001029215 A JP2001029215 A JP 2001029215A JP 4989821 B2 JP4989821 B2 JP 4989821B2
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JP
Japan
Prior art keywords
memory array
row
column
data bus
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001029215A
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English (en)
Japanese (ja)
Other versions
JP2002230976A5 (enExample
JP2002230976A (ja
Inventor
隆司 河野
哲夫 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2001029215A priority Critical patent/JP4989821B2/ja
Priority to US09/907,743 priority patent/US6496441B2/en
Publication of JP2002230976A publication Critical patent/JP2002230976A/ja
Publication of JP2002230976A5 publication Critical patent/JP2002230976A5/ja
Application granted granted Critical
Publication of JP4989821B2 publication Critical patent/JP4989821B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP2001029215A 2001-02-06 2001-02-06 半導体記憶装置 Expired - Fee Related JP4989821B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001029215A JP4989821B2 (ja) 2001-02-06 2001-02-06 半導体記憶装置
US09/907,743 US6496441B2 (en) 2001-02-06 2001-07-19 Semiconductor memory device with improved data propagation characteristics of a data bus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001029215A JP4989821B2 (ja) 2001-02-06 2001-02-06 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010204363A Division JP5036856B2 (ja) 2010-09-13 2010-09-13 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2002230976A JP2002230976A (ja) 2002-08-16
JP2002230976A5 JP2002230976A5 (enExample) 2008-01-10
JP4989821B2 true JP4989821B2 (ja) 2012-08-01

Family

ID=18893589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001029215A Expired - Fee Related JP4989821B2 (ja) 2001-02-06 2001-02-06 半導体記憶装置

Country Status (2)

Country Link
US (1) US6496441B2 (enExample)
JP (1) JP4989821B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002237188A (ja) * 2001-02-13 2002-08-23 Mitsubishi Electric Corp 半導体記憶装置
JP2003100073A (ja) * 2001-09-25 2003-04-04 Mitsubishi Electric Corp 半導体記憶装置
JP4497327B2 (ja) * 2006-12-19 2010-07-07 エルピーダメモリ株式会社 半導体記憶装置
TW200845003A (en) * 2007-05-01 2008-11-16 Nanya Technology Corp Semiconductor device and memory circuit layout method
US8159898B2 (en) * 2008-01-18 2012-04-17 Hynix Semiconductor Inc. Architecture of highly integrated semiconductor memory device
KR100996187B1 (ko) * 2008-01-18 2010-11-24 주식회사 하이닉스반도체 고집적 반도체 메모리 장치의 내부 구조
US9700286B2 (en) 2012-04-25 2017-07-11 Kph Diagnostics Inc. Fluid sample collection and testing device
KR102127966B1 (ko) * 2013-12-20 2020-06-30 에스케이하이닉스 주식회사 반도체 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03209694A (ja) * 1990-01-12 1991-09-12 Sharp Corp 半導体記憶装置
KR0164391B1 (ko) * 1995-06-29 1999-02-18 김광호 고속동작을 위한 회로 배치 구조를 가지는 반도체 메모리 장치
JPH09231760A (ja) * 1995-12-20 1997-09-05 Toshiba Corp 半導体記憶装置
KR970051258A (ko) * 1995-12-28 1997-07-29 문정환 반도체 메모리의 데이타 버스 구동 회로
JPH11145420A (ja) 1997-11-07 1999-05-28 Mitsubishi Electric Corp 半導体記憶装置
JPH11265573A (ja) * 1998-01-13 1999-09-28 Mitsubishi Electric Corp 半導体記憶装置
JPH11203862A (ja) * 1998-01-13 1999-07-30 Mitsubishi Electric Corp 半導体記憶装置
US6072743A (en) 1998-01-13 2000-06-06 Mitsubishi Denki Kabushiki Kaisha High speed operable semiconductor memory device with memory blocks arranged about the center
JPH11204749A (ja) * 1998-01-19 1999-07-30 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JP2002230976A (ja) 2002-08-16
US20020105849A1 (en) 2002-08-08
US6496441B2 (en) 2002-12-17

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