JP4969231B2 - 試料電位情報検出方法及び荷電粒子線装置 - Google Patents

試料電位情報検出方法及び荷電粒子線装置 Download PDF

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Publication number
JP4969231B2
JP4969231B2 JP2006340650A JP2006340650A JP4969231B2 JP 4969231 B2 JP4969231 B2 JP 4969231B2 JP 2006340650 A JP2006340650 A JP 2006340650A JP 2006340650 A JP2006340650 A JP 2006340650A JP 4969231 B2 JP4969231 B2 JP 4969231B2
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Prior art keywords
charged particle
sample
particle beam
potential
image
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Japanese (ja)
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JP2008153085A5 (enExample
JP2008153085A (ja
Inventor
実 山崎
明 池上
秀之 数見
修 那須
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2006340650A priority Critical patent/JP4969231B2/ja
Priority to US11/958,625 priority patent/US8263934B2/en
Publication of JP2008153085A publication Critical patent/JP2008153085A/ja
Publication of JP2008153085A5 publication Critical patent/JP2008153085A5/ja
Application granted granted Critical
Publication of JP4969231B2 publication Critical patent/JP4969231B2/ja
Priority to US13/568,922 priority patent/US8487250B2/en
Priority to US13/924,213 priority patent/US8766182B2/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29—Reflection microscopes
    • H01J37/292—Reflection microscopes using scanning ray
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24—Arrangements for measuring quantities of charge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2594—Measuring electric fields or potentials

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2006340650A 2006-12-19 2006-12-19 試料電位情報検出方法及び荷電粒子線装置 Active JP4969231B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006340650A JP4969231B2 (ja) 2006-12-19 2006-12-19 試料電位情報検出方法及び荷電粒子線装置
US11/958,625 US8263934B2 (en) 2006-12-19 2007-12-18 Method for detecting information of an electric potential on a sample and charged particle beam apparatus
US13/568,922 US8487250B2 (en) 2006-12-19 2012-08-07 Method for detecting information of an electronic potential on a sample and charged particle beam apparatus
US13/924,213 US8766182B2 (en) 2006-12-19 2013-06-21 Method for detecting information of an electric potential on a sample and charged particle beam apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006340650A JP4969231B2 (ja) 2006-12-19 2006-12-19 試料電位情報検出方法及び荷電粒子線装置

Related Child Applications (1)

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JP2011264205A Division JP5470360B2 (ja) 2011-12-02 2011-12-02 試料電位情報検出方法及び荷電粒子線装置

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JP2008153085A JP2008153085A (ja) 2008-07-03
JP2008153085A5 JP2008153085A5 (enExample) 2010-02-25
JP4969231B2 true JP4969231B2 (ja) 2012-07-04

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US (3) US8263934B2 (enExample)
JP (1) JP4969231B2 (enExample)

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* Cited by examiner, † Cited by third party
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JP4644617B2 (ja) * 2006-03-23 2011-03-02 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP4969231B2 (ja) * 2006-12-19 2012-07-04 株式会社日立ハイテクノロジーズ 試料電位情報検出方法及び荷電粒子線装置
JP5241168B2 (ja) * 2007-08-09 2013-07-17 株式会社日立ハイテクノロジーズ 電子顕微鏡
JP5094282B2 (ja) * 2007-08-29 2012-12-12 株式会社日立ハイテクノロジーズ ローカル帯電分布精密計測方法及び装置
JP5400882B2 (ja) 2009-06-30 2014-01-29 株式会社日立ハイテクノロジーズ 半導体検査装置及びそれを用いた半導体検査方法
US20120119087A1 (en) * 2009-08-03 2012-05-17 Hitachi High-Technologies Corporation Charged-particle microscope
JP2011035206A (ja) * 2009-08-03 2011-02-17 Renesas Electronics Corp 半導体装置の解析装置及び半導体装置の解析方法
US8451016B2 (en) * 2009-12-30 2013-05-28 Stmicroelectronics Pte Ltd. Device and method for testing magnetic switches at wafer-level stage of manufacture
JP2012068051A (ja) * 2010-09-21 2012-04-05 Toshiba Corp パターン欠陥検査装置およびパターン欠陥検査方法
JP5814741B2 (ja) * 2011-10-20 2015-11-17 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP5948084B2 (ja) * 2012-02-28 2016-07-06 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP6116921B2 (ja) 2013-01-23 2017-04-19 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP6701228B2 (ja) 2015-03-24 2020-05-27 ケーエルエー コーポレイション 像ビームの安定化及び識別性が改善された荷電粒子顕微システム及び方法
JP2018174016A (ja) * 2015-07-29 2018-11-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置
KR101756171B1 (ko) * 2015-12-15 2017-07-12 (주)새론테크놀로지 주사 전자 현미경
US10515444B2 (en) * 2017-01-30 2019-12-24 Dongfang Jingyuan Electron Limited Care area generation for inspecting integrated circuits
US10665421B2 (en) * 2018-10-10 2020-05-26 Applied Materials, Inc. In-situ beam profile metrology
CN109543961A (zh) * 2018-11-02 2019-03-29 中国电力科学研究院有限公司 一种基于标识信息的绝缘子样品管理方法
KR20230068893A (ko) * 2021-11-11 2023-05-18 삼성전자주식회사 주사 전자 현미경(Scannig Electron Microscope, 이하 SEM), SEM을 동작시키는 방법 및 이를 이용한 반도체 소자를 제조하는 방법
JP7664427B2 (ja) 2022-01-19 2025-04-17 株式会社日立ハイテク 荷電粒子線装置及びそれを用いた検査方法

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JP5241168B2 (ja) * 2007-08-09 2013-07-17 株式会社日立ハイテクノロジーズ 電子顕微鏡

Also Published As

Publication number Publication date
US8263934B2 (en) 2012-09-11
US8766182B2 (en) 2014-07-01
US20090272899A1 (en) 2009-11-05
JP2008153085A (ja) 2008-07-03
US20130284921A1 (en) 2013-10-31
US20120298863A1 (en) 2012-11-29
US8487250B2 (en) 2013-07-16

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