JP4959872B2 - バイポーラトランジスタ - Google Patents

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Publication number
JP4959872B2
JP4959872B2 JP2000614486A JP2000614486A JP4959872B2 JP 4959872 B2 JP4959872 B2 JP 4959872B2 JP 2000614486 A JP2000614486 A JP 2000614486A JP 2000614486 A JP2000614486 A JP 2000614486A JP 4959872 B2 JP4959872 B2 JP 4959872B2
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JP
Japan
Prior art keywords
layer
base
bipolar transistor
emitter
transistor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000614486A
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English (en)
Japanese (ja)
Other versions
JP2002543585A5 (enExample
JP2002543585A (ja
Inventor
レナート クルセ，
ミーテク バコウスキー，
ウルフ グスタフソン，
ボー ブレイトホルツ，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
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Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of JP2002543585A publication Critical patent/JP2002543585A/ja
Publication of JP2002543585A5 publication Critical patent/JP2002543585A5/ja
Application granted granted Critical
Publication of JP4959872B2 publication Critical patent/JP4959872B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
JP2000614486A 1999-04-21 2000-04-12 バイポーラトランジスタ Expired - Lifetime JP4959872B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9901410-2 1999-04-21
SE9901410A SE9901410D0 (sv) 1999-04-21 1999-04-21 Abipolar transistor
PCT/SE2000/000698 WO2000065636A2 (en) 1999-04-21 2000-04-12 A bipolar transistor

Publications (3)

Publication Number Publication Date
JP2002543585A JP2002543585A (ja) 2002-12-17
JP2002543585A5 JP2002543585A5 (enExample) 2007-05-24
JP4959872B2 true JP4959872B2 (ja) 2012-06-27

Family

ID=20415286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000614486A Expired - Lifetime JP4959872B2 (ja) 1999-04-21 2000-04-12 バイポーラトランジスタ

Country Status (7)

Country Link
US (1) US6313488B1 (enExample)
EP (1) EP1186049B1 (enExample)
JP (1) JP4959872B2 (enExample)
AT (1) ATE501526T1 (enExample)
DE (1) DE60045708D1 (enExample)
SE (1) SE9901410D0 (enExample)
WO (1) WO2000065636A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332565A (ja) * 2000-05-25 2001-11-30 Nec Corp 負性微分抵抗素子およびその製造方法
US7132701B1 (en) 2001-07-27 2006-11-07 Fairchild Semiconductor Corporation Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods
US6870204B2 (en) 2001-11-21 2005-03-22 Astralux, Inc. Heterojunction bipolar transistor containing at least one silicon carbide layer
JP2004200391A (ja) * 2002-12-18 2004-07-15 Hitachi Ltd 半導体装置
EP1583154B1 (en) * 2003-01-06 2011-12-28 Nippon Telegraph And Telephone Corporation P-type nitride semiconductor structure and bipolar transistor
JP2004247545A (ja) * 2003-02-14 2004-09-02 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP4777699B2 (ja) 2005-06-13 2011-09-21 本田技研工業株式会社 バイポーラ型半導体装置およびその製造方法
US7868335B1 (en) * 2008-08-18 2011-01-11 Hrl Laboratories, Llc Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
US9029909B2 (en) 2013-06-24 2015-05-12 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US9236458B2 (en) * 2013-07-11 2016-01-12 Infineon Technologies Ag Bipolar transistor and a method for manufacturing a bipolar transistor
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
JP6659685B2 (ja) 2014-11-06 2020-03-04 アイディール パワー インコーポレイテッド ダブルベースバイポーラジャンクショントランジスタの最適化された動作を有する回路、方法、及びシステム、並びに、可変電圧自己同期整流器回路、方法、及びシステム、並びに、ダブルベースコンタクト双方向バイポーラジャンクショントランジスタ回路による動作ポイント最適化、方法、及びシステム。
CN105977287B (zh) * 2016-07-25 2018-11-09 电子科技大学 一种碳化硅双极结型晶体管
CN111081543A (zh) * 2019-12-26 2020-04-28 深圳第三代半导体研究院 一种基于二维材料/氮化镓的双极型三极管及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985742A (en) * 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
JPH05275441A (ja) * 1992-03-24 1993-10-22 Sumitomo Electric Ind Ltd 半導体装置及びその製造方法
US5624853A (en) * 1992-03-24 1997-04-29 Sumitomo Electric Industries, Ltd. Method for forming heterojunction bipolar transistors
US5641975A (en) * 1995-11-09 1997-06-24 Northrop Grumman Corporation Aluminum gallium nitride based heterojunction bipolar transistor
WO1997036317A2 (en) * 1996-03-27 1997-10-02 Abb Research Limited A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC BY THE USE OF AN IMPLANTING STEP AND A DEVICE PRODUCED THEREBY
JPH09293880A (ja) * 1995-12-29 1997-11-11 Texas Instr Inc <Ti> 低容量電力用ｖｆｅｔの方法及びデバイス
WO1998049731A1 (en) * 1997-04-30 1998-11-05 Cree Research, Inc. Silicon carbide field conrolled bipolar switch

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
US5319220A (en) * 1988-01-20 1994-06-07 Sharp Kabushiki Kaisha Silicon carbide semiconductor device
US5847414A (en) * 1995-10-30 1998-12-08 Abb Research Limited Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride
SE9600199D0 (sv) * 1996-01-19 1996-01-19 Abb Research Ltd A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985742A (en) * 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
JPH05275441A (ja) * 1992-03-24 1993-10-22 Sumitomo Electric Ind Ltd 半導体装置及びその製造方法
US5624853A (en) * 1992-03-24 1997-04-29 Sumitomo Electric Industries, Ltd. Method for forming heterojunction bipolar transistors
US5641975A (en) * 1995-11-09 1997-06-24 Northrop Grumman Corporation Aluminum gallium nitride based heterojunction bipolar transistor
JPH09293880A (ja) * 1995-12-29 1997-11-11 Texas Instr Inc <Ti> 低容量電力用ｖｆｅｔの方法及びデバイス
WO1997036317A2 (en) * 1996-03-27 1997-10-02 Abb Research Limited A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC BY THE USE OF AN IMPLANTING STEP AND A DEVICE PRODUCED THEREBY
WO1998049731A1 (en) * 1997-04-30 1998-11-05 Cree Research, Inc. Silicon carbide field conrolled bipolar switch
JP2001522533A (ja) * 1997-04-30 2001-11-13 クリー インコーポレイテッド シリコン・カーバイド・フィールド制御型バイポーラ・スイッチ

Also Published As

Publication number Publication date
EP1186049B1 (en) 2011-03-09
WO2000065636A2 (en) 2000-11-02
SE9901410D0 (sv) 1999-04-21
DE60045708D1 (de) 2011-04-21
ATE501526T1 (de) 2011-03-15
WO2000065636A8 (en) 2001-07-12
US6313488B1 (en) 2001-11-06
WO2000065636A3 (en) 2001-01-25
JP2002543585A (ja) 2002-12-17
EP1186049A2 (en) 2002-03-13

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