SE9901410D0 - Abipolar transistor - Google Patents
Abipolar transistorInfo
- Publication number
- SE9901410D0 SE9901410D0 SE9901410A SE9901410A SE9901410D0 SE 9901410 D0 SE9901410 D0 SE 9901410D0 SE 9901410 A SE9901410 A SE 9901410A SE 9901410 A SE9901410 A SE 9901410A SE 9901410 D0 SE9901410 D0 SE 9901410D0
- Authority
- SE
- Sweden
- Prior art keywords
- transistor
- abipolar
- layer
- sic
- semi
- Prior art date
Links
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9901410A SE9901410D0 (sv) | 1999-04-21 | 1999-04-21 | Abipolar transistor |
US09/333,296 US6313488B1 (en) | 1999-04-21 | 1999-06-15 | Bipolar transistor having a low doped drift layer of crystalline SiC |
PCT/SE2000/000698 WO2000065636A2 (en) | 1999-04-21 | 2000-04-12 | A bipolar transistor |
JP2000614486A JP4959872B2 (ja) | 1999-04-21 | 2000-04-12 | バイポーラトランジスタ |
EP00928024A EP1186049B1 (en) | 1999-04-21 | 2000-04-12 | A bipolar transistor |
AT00928024T ATE501526T1 (de) | 1999-04-21 | 2000-04-12 | Bipolarer transistor |
DE60045708T DE60045708D1 (de) | 1999-04-21 | 2000-04-12 | Bipolarer transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9901410A SE9901410D0 (sv) | 1999-04-21 | 1999-04-21 | Abipolar transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9901410D0 true SE9901410D0 (sv) | 1999-04-21 |
Family
ID=20415286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9901410A SE9901410D0 (sv) | 1999-04-21 | 1999-04-21 | Abipolar transistor |
Country Status (7)
Country | Link |
---|---|
US (1) | US6313488B1 (xx) |
EP (1) | EP1186049B1 (xx) |
JP (1) | JP4959872B2 (xx) |
AT (1) | ATE501526T1 (xx) |
DE (1) | DE60045708D1 (xx) |
SE (1) | SE9901410D0 (xx) |
WO (1) | WO2000065636A2 (xx) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001332565A (ja) * | 2000-05-25 | 2001-11-30 | Nec Corp | 負性微分抵抗素子およびその製造方法 |
US7132701B1 (en) | 2001-07-27 | 2006-11-07 | Fairchild Semiconductor Corporation | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods |
US6870204B2 (en) | 2001-11-21 | 2005-03-22 | Astralux, Inc. | Heterojunction bipolar transistor containing at least one silicon carbide layer |
JP2004200391A (ja) * | 2002-12-18 | 2004-07-15 | Hitachi Ltd | 半導体装置 |
EP1583154B1 (en) * | 2003-01-06 | 2011-12-28 | Nippon Telegraph And Telephone Corporation | P-type nitride semiconductor structure and bipolar transistor |
JP2004247545A (ja) * | 2003-02-14 | 2004-09-02 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
JP4777699B2 (ja) | 2005-06-13 | 2011-09-21 | 本田技研工業株式会社 | バイポーラ型半導体装置およびその製造方法 |
US7868335B1 (en) * | 2008-08-18 | 2011-01-11 | Hrl Laboratories, Llc | Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs |
US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
CA2927763C (en) | 2013-06-24 | 2018-08-21 | Ideal Power Inc. | Systems, circuits, devices, and methods with bidirectional bipolar transistors |
US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
US9236458B2 (en) * | 2013-07-11 | 2016-01-12 | Infineon Technologies Ag | Bipolar transistor and a method for manufacturing a bipolar transistor |
US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
WO2016073957A1 (en) | 2014-11-06 | 2016-05-12 | Ideal Power Inc. | Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors |
CN105977287B (zh) * | 2016-07-25 | 2018-11-09 | 电子科技大学 | 一种碳化硅双极结型晶体管 |
CN111081543A (zh) * | 2019-12-26 | 2020-04-28 | 深圳第三代半导体研究院 | 一种基于二维材料/氮化镓的双极型三极管及其制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4945394A (en) * | 1987-10-26 | 1990-07-31 | North Carolina State University | Bipolar junction transistor on silicon carbide |
US5319220A (en) * | 1988-01-20 | 1994-06-07 | Sharp Kabushiki Kaisha | Silicon carbide semiconductor device |
US4985742A (en) * | 1989-07-07 | 1991-01-15 | University Of Colorado Foundation, Inc. | High temperature semiconductor devices having at least one gallium nitride layer |
JP3339508B2 (ja) * | 1992-03-24 | 2002-10-28 | 住友電気工業株式会社 | 半導体装置 |
CA2092215A1 (en) | 1992-03-24 | 1993-09-25 | Shinichi Shikata | Semiconductor device |
US5847414A (en) * | 1995-10-30 | 1998-12-08 | Abb Research Limited | Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride |
US5641975A (en) | 1995-11-09 | 1997-06-24 | Northrop Grumman Corporation | Aluminum gallium nitride based heterojunction bipolar transistor |
US5910665A (en) * | 1995-12-29 | 1999-06-08 | Texas Instruments Incorporated | Low capacitance power VFET method and device |
SE9600199D0 (sv) * | 1996-01-19 | 1996-01-19 | Abb Research Ltd | A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer |
SE9601176D0 (sv) * | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby |
US6011279A (en) * | 1997-04-30 | 2000-01-04 | Cree Research, Inc. | Silicon carbide field controlled bipolar switch |
-
1999
- 1999-04-21 SE SE9901410A patent/SE9901410D0/xx unknown
- 1999-06-15 US US09/333,296 patent/US6313488B1/en not_active Expired - Lifetime
-
2000
- 2000-04-12 AT AT00928024T patent/ATE501526T1/de not_active IP Right Cessation
- 2000-04-12 JP JP2000614486A patent/JP4959872B2/ja not_active Expired - Lifetime
- 2000-04-12 EP EP00928024A patent/EP1186049B1/en not_active Expired - Lifetime
- 2000-04-12 WO PCT/SE2000/000698 patent/WO2000065636A2/en active Application Filing
- 2000-04-12 DE DE60045708T patent/DE60045708D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1186049B1 (en) | 2011-03-09 |
WO2000065636A8 (en) | 2001-07-12 |
ATE501526T1 (de) | 2011-03-15 |
WO2000065636A2 (en) | 2000-11-02 |
WO2000065636A3 (en) | 2001-01-25 |
DE60045708D1 (de) | 2011-04-21 |
EP1186049A2 (en) | 2002-03-13 |
US6313488B1 (en) | 2001-11-06 |
JP4959872B2 (ja) | 2012-06-27 |
JP2002543585A (ja) | 2002-12-17 |
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