JP4949378B2 - X線撮像装置内で直接変換されるx線の作用を最小化する方法 - Google Patents
X線撮像装置内で直接変換されるx線の作用を最小化する方法 Download PDFInfo
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- JP4949378B2 JP4949378B2 JP2008503006A JP2008503006A JP4949378B2 JP 4949378 B2 JP4949378 B2 JP 4949378B2 JP 2008503006 A JP2008503006 A JP 2008503006A JP 2008503006 A JP2008503006 A JP 2008503006A JP 4949378 B2 JP4949378 B2 JP 4949378B2
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- 238000003384 imaging method Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 12
- 230000000694 effects Effects 0.000 title description 6
- 230000003071 parasitic effect Effects 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 21
- 238000005259 measurement Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000003574 free electron Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 241001408627 Agriopis marginaria Species 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004980 dosimetry Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
- H01L31/1185—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors of the shallow PN junction detector type
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Description
Claims (19)
- X線を可視光に変換するシンチレータを含むX線撮像装置の一部をなすCMOS画像センサであって、
エピタキシャル層の第1の井戸内に形成され、前記シンチレータによってX線から変換された可視光を受容するように構成されたホトダイオードと、
前記ホトダイオードから画像情報を受容するように構成され、前記エピタキシャル層の第2の井戸内に形成されている読み出し回路と、
前記読み出し回路が形成された前記第2の井戸の下方に拡がり、X線から直接変換される寄生電子を流出させるようにダイオードを形成するように構成されている第1の深井戸とを有するCMOS画像センサ。 - 前記第2の井戸がp型井戸からなり、前記第1の深井戸がn型の深井戸からなる請求項1に記載のCMOS画像センサ。
- 前記第1の深井戸が前記エピタキシャル層とともにダイオードを形成する請求項1に記載のCMOS画像センサ。
- 前記第1の井戸がn型井戸からなり、前記第2の井戸がp型井戸からなる請求項1に記載のCMOS画像センサ。
- 前記読み出し回路が形成された前記第2の井戸の下方に拡がる第2の深井戸及び第3の深井戸をさらに含み、該第2の深井戸及び第3の深井戸が前記第1の深井戸を取り囲み、それによって前記第1の深井戸の空乏領域の幅が制限される請求項1に記載のCMOS画像センサ。
- 前記第1の深井戸がn型の深井戸であり、
前記第2の深井戸及び第3の深井戸がp型の深井戸である請求項5に記載のCMOS画像センサ。 - 可視光が前記読み出し回路の部分に衝突することを防止するように構成されている金属シールドをさらに含む請求項1に記載のCMOS画像センサ。
- 前記第1の深井戸が前記寄生電子を電源に流出させる請求項1に記載のCMOS画像センサ。
- 前記第1の深井戸が、前記寄生電子を測定回路に流出させてX線源を調整する請求項1に記載のCMOS画像センサ。
- X線撮像装置で使用される画像センサであって、
シンチレータからの光を受容するように構成されているホトダイオードと、
前記ホトダイオードに結合され、第1の井戸内に形成されている読み出し回路と、
前記第1の井戸及び前記読み出し回路の下方に拡がり、X線から直接変換される寄生電子を流出させるように構成されている第1の深井戸とからなる画像センサ。 - 前記第1の井戸の下方に拡がり、前記第1の深井戸の第1の側部に形成されている第2の深井戸をさらに含み、該第2の深井戸を越えて横方向に電子が移動することが防止される請求項10に記載の画像センサ。
- 前記第1の井戸の下方に拡がり、前記第1の側部とは異なる前記第1の深井戸の第2の側部に形成されている第3の深井戸をさらに含む請求項11に記載の画像センサ。
- 前記第1の井戸の下方に拡がり、前記第1の深井戸の側部に形成されている深い溝をさらに含み、該深い溝を越えて横方向に電子が移動することが防止される請求項10に記載の画像センサ。
- 前記ホトダイオードが第2の井戸内に形成され、該第2の井戸がn型井戸であり、前記第1の井戸がp型井戸であり、前記第1の深井戸がn型の深井戸である請求項10に記載の画像センサ。
- 撮像装置の操作方法であって、
X線を可視光に変換し、
CMOS画像センサの読み出し回路の下方の領域でX線を受容し、
前記読み出し回路の下方に形成されている第1の導電型井戸からなる深井戸を含むダイオードを介して、X線により生成された寄生電子を流出させ、
前記CMOS画像センサのホトダイオード内で可視光を受容し、
前記ホトダイオードからの電子を前記読み出し回路に流すことを含み、
前記第1の導電型井戸が、前記読み出し回路が形成された、前記第1の導電型井戸とは反対の導電型の第2の導電型井戸の下方に拡がるものである方法。 - 前記第1の導電型井戸が、n型井戸からなり、前記第2の導電型井戸が、p型井戸からなる請求項15に記載の方法。
- 前記寄生電子を流出させることが、前記寄生電子を電源に流すことからなる請求項15に記載の方法。
- 前記寄生電子を流出させることが、線量測定用の測定回路に前記寄生電子を流すことからなる請求項15に記載の方法。
- 前記深井戸からの電子の側方のクロストークを防ぐことをさらに含む請求項15に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/089,737 | 2005-03-25 | ||
US11/089,737 US7151287B1 (en) | 2005-03-25 | 2005-03-25 | Minimizing the effect of directly converted x-rays in x-ray imagers |
PCT/US2006/007762 WO2006104641A2 (en) | 2005-03-25 | 2006-03-01 | Minimized directly converted x-ray effects on imagers |
Publications (2)
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JP2008538159A JP2008538159A (ja) | 2008-10-09 |
JP4949378B2 true JP4949378B2 (ja) | 2012-06-06 |
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JP2008503006A Active JP4949378B2 (ja) | 2005-03-25 | 2006-03-01 | X線撮像装置内で直接変換されるx線の作用を最小化する方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7151287B1 (ja) |
EP (1) | EP1864336B1 (ja) |
JP (1) | JP4949378B2 (ja) |
CN (1) | CN101401219B (ja) |
WO (1) | WO2006104641A2 (ja) |
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JP5157259B2 (ja) | 2007-05-29 | 2013-03-06 | ソニー株式会社 | 固体撮像素子及び撮像装置 |
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US7974805B2 (en) * | 2008-10-14 | 2011-07-05 | ON Semiconductor Trading, Ltd | Image sensor and method |
EP2556536B1 (en) * | 2010-04-09 | 2018-03-14 | Scint-X AB | Pixel structures for optimized x-ray noise performance |
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US20140117501A1 (en) * | 2012-10-25 | 2014-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Differential moscap device |
US8987825B2 (en) * | 2013-06-10 | 2015-03-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having a double deep well |
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JP6351097B2 (ja) * | 2014-06-20 | 2018-07-04 | 国立大学法人静岡大学 | 電磁波検出素子及び固体撮像装置 |
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CN109300877B (zh) * | 2018-08-27 | 2020-10-09 | 北京大学 | 一种半导体衬底中的通孔结构及其制造方法 |
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- 2005-03-25 US US11/089,737 patent/US7151287B1/en active Active
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- 2006-03-01 JP JP2008503006A patent/JP4949378B2/ja active Active
- 2006-03-01 CN CN2006800136749A patent/CN101401219B/zh active Active
- 2006-03-01 WO PCT/US2006/007762 patent/WO2006104641A2/en active Application Filing
- 2006-03-01 EP EP06736992.6A patent/EP1864336B1/en active Active
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WO2006104641A3 (en) | 2009-06-04 |
CN101401219A (zh) | 2009-04-01 |
EP1864336B1 (en) | 2016-04-20 |
EP1864336A4 (en) | 2012-04-18 |
WO2006104641A2 (en) | 2006-10-05 |
CN101401219B (zh) | 2010-09-22 |
US7151287B1 (en) | 2006-12-19 |
EP1864336A2 (en) | 2007-12-12 |
JP2008538159A (ja) | 2008-10-09 |
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