CN101401219A - 在x射线成像仪中将直接转换的x射线的影响最小化 - Google Patents
在x射线成像仪中将直接转换的x射线的影响最小化 Download PDFInfo
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- CN101401219A CN101401219A CNA2006800136749A CN200680013674A CN101401219A CN 101401219 A CN101401219 A CN 101401219A CN A2006800136749 A CNA2006800136749 A CN A2006800136749A CN 200680013674 A CN200680013674 A CN 200680013674A CN 101401219 A CN101401219 A CN 101401219A
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- 230000003071 parasitic effect Effects 0.000 claims abstract description 40
- 230000005516 deep trap Effects 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 238000003384 imaging method Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000003574 free electron Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
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- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
- H01L31/1185—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors of the shallow PN junction detector type
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/089,737 | 2005-03-25 | ||
US11/089,737 US7151287B1 (en) | 2005-03-25 | 2005-03-25 | Minimizing the effect of directly converted x-rays in x-ray imagers |
PCT/US2006/007762 WO2006104641A2 (en) | 2005-03-25 | 2006-03-01 | Minimized directly converted x-ray effects on imagers |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101401219A true CN101401219A (zh) | 2009-04-01 |
CN101401219B CN101401219B (zh) | 2010-09-22 |
Family
ID=37053863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800136749A Active CN101401219B (zh) | 2005-03-25 | 2006-03-01 | 在x射线成像仪中将直接转换的x射线的影响最小化 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7151287B1 (zh) |
EP (1) | EP1864336B1 (zh) |
JP (1) | JP4949378B2 (zh) |
CN (1) | CN101401219B (zh) |
WO (1) | WO2006104641A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104898074A (zh) * | 2014-03-06 | 2015-09-09 | 美格纳半导体有限公司 | 埋入式磁传感器 |
CN106449671A (zh) * | 2015-08-07 | 2017-02-22 | 豪威科技股份有限公司 | 中间集成电路裸片及堆叠成像系统 |
CN109300877A (zh) * | 2018-08-27 | 2019-02-01 | 北京大学 | 一种半导体衬底中的通孔结构及其制造方法 |
CN111769128A (zh) * | 2020-07-10 | 2020-10-13 | 山东大学 | X射线直接探测图像传感器、其像素单元及制备方法 |
CN111769129A (zh) * | 2020-07-17 | 2020-10-13 | 山东大学 | 一种抗辐照粒子探测器 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100772891B1 (ko) * | 2005-10-04 | 2007-11-05 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
US8378396B2 (en) * | 2005-10-28 | 2013-02-19 | Seiko Instruments Inc. | Photoelectric conversion device and image sensor using the same |
GB0701076D0 (en) * | 2007-01-19 | 2007-02-28 | E2V Tech Uk Ltd | Imaging apparatus |
JP5157259B2 (ja) | 2007-05-29 | 2013-03-06 | ソニー株式会社 | 固体撮像素子及び撮像装置 |
JP4719201B2 (ja) * | 2007-09-25 | 2011-07-06 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US20090108311A1 (en) * | 2007-10-25 | 2009-04-30 | Xinqiao Liu | CMOS Detector with Reduced Sensitivity to X-Rays |
US7974805B2 (en) * | 2008-10-14 | 2011-07-05 | ON Semiconductor Trading, Ltd | Image sensor and method |
EP2556536B1 (en) * | 2010-04-09 | 2018-03-14 | Scint-X AB | Pixel structures for optimized x-ray noise performance |
DE102011004936A1 (de) * | 2011-03-02 | 2012-09-06 | Siemens Aktiengesellschaft | Röntgendetektor und medizinisches Röntgengerät |
US20140117501A1 (en) * | 2012-10-25 | 2014-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Differential moscap device |
US8987825B2 (en) * | 2013-06-10 | 2015-03-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having a double deep well |
JP6351097B2 (ja) * | 2014-06-20 | 2018-07-04 | 国立大学法人静岡大学 | 電磁波検出素子及び固体撮像装置 |
US9526468B2 (en) | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
EP3614433B1 (en) | 2018-08-21 | 2022-04-06 | ams International AG | Image sensor, image sensor arrangement and computed tomography apparatus including the same |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5587611A (en) * | 1995-05-08 | 1996-12-24 | Analogic Corporation | Coplanar X-ray photodiode assemblies |
US6815791B1 (en) * | 1997-02-10 | 2004-11-09 | Fillfactory | Buried, fully depletable, high fill factor photodiodes |
CA2247565A1 (en) * | 1997-10-20 | 1999-04-20 | General Electric Company | Semiconductor diode array having radiation degradation retardation means |
JPH11307752A (ja) * | 1998-04-21 | 1999-11-05 | Toshiba Corp | 固体撮像装置 |
JP3457551B2 (ja) | 1998-11-09 | 2003-10-20 | 株式会社東芝 | 固体撮像装置 |
US6445014B1 (en) * | 1999-06-16 | 2002-09-03 | Micron Technology Inc. | Retrograde well structure for a CMOS imager |
US6534335B1 (en) * | 1999-07-22 | 2003-03-18 | Micron Technology, Inc. | Optimized low leakage diodes, including photodiodes |
US6690074B1 (en) | 1999-12-10 | 2004-02-10 | Fillfactory | Radiation resistant semiconductor device structure |
JP2002203954A (ja) | 2000-10-31 | 2002-07-19 | Sharp Corp | 回路内蔵受光素子 |
US6713796B1 (en) * | 2001-01-19 | 2004-03-30 | Dalsa, Inc. | Isolated photodiode |
US6608337B2 (en) * | 2001-04-12 | 2003-08-19 | Ise Tex, Inc | Image sensor with an enhanced near infra-red spectral response and method of making |
US6545303B1 (en) | 2001-11-06 | 2003-04-08 | Fillfactory | Method to increase conversion gain of an active pixel, and corresponding active pixel |
JP4115128B2 (ja) * | 2001-12-26 | 2008-07-09 | キヤノン株式会社 | 光電変換装置及び画像形成システム |
US6683360B1 (en) | 2002-01-24 | 2004-01-27 | Fillfactory | Multiple or graded epitaxial wafers for particle or radiation detection |
JP3840203B2 (ja) | 2002-06-27 | 2006-11-01 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置を用いたカメラシステム |
JP3891125B2 (ja) * | 2003-02-21 | 2007-03-14 | セイコーエプソン株式会社 | 固体撮像装置 |
EP1620895B1 (en) * | 2003-05-08 | 2016-03-02 | The Science and Technology Facilities Council | Accelerated particle and high energy radiation sensor |
-
2005
- 2005-03-25 US US11/089,737 patent/US7151287B1/en active Active
-
2006
- 2006-03-01 JP JP2008503006A patent/JP4949378B2/ja active Active
- 2006-03-01 CN CN2006800136749A patent/CN101401219B/zh active Active
- 2006-03-01 WO PCT/US2006/007762 patent/WO2006104641A2/en active Application Filing
- 2006-03-01 EP EP06736992.6A patent/EP1864336B1/en active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104898074A (zh) * | 2014-03-06 | 2015-09-09 | 美格纳半导体有限公司 | 埋入式磁传感器 |
CN106449671A (zh) * | 2015-08-07 | 2017-02-22 | 豪威科技股份有限公司 | 中间集成电路裸片及堆叠成像系统 |
CN106449671B (zh) * | 2015-08-07 | 2019-01-01 | 豪威科技股份有限公司 | 中间集成电路裸片及堆叠成像系统 |
CN109300877A (zh) * | 2018-08-27 | 2019-02-01 | 北京大学 | 一种半导体衬底中的通孔结构及其制造方法 |
CN111769128A (zh) * | 2020-07-10 | 2020-10-13 | 山东大学 | X射线直接探测图像传感器、其像素单元及制备方法 |
CN111769128B (zh) * | 2020-07-10 | 2021-05-07 | 山东大学 | X射线直接探测图像传感器、其像素单元及制备方法 |
CN111769129A (zh) * | 2020-07-17 | 2020-10-13 | 山东大学 | 一种抗辐照粒子探测器 |
CN111769129B (zh) * | 2020-07-17 | 2021-04-13 | 山东大学 | 一种抗辐照粒子探测器 |
Also Published As
Publication number | Publication date |
---|---|
WO2006104641A3 (en) | 2009-06-04 |
EP1864336B1 (en) | 2016-04-20 |
EP1864336A4 (en) | 2012-04-18 |
WO2006104641A2 (en) | 2006-10-05 |
CN101401219B (zh) | 2010-09-22 |
US7151287B1 (en) | 2006-12-19 |
EP1864336A2 (en) | 2007-12-12 |
JP2008538159A (ja) | 2008-10-09 |
JP4949378B2 (ja) | 2012-06-06 |
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