JP4941415B2 - クリーンベンチ - Google Patents

クリーンベンチ Download PDF

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Publication number
JP4941415B2
JP4941415B2 JP2008168497A JP2008168497A JP4941415B2 JP 4941415 B2 JP4941415 B2 JP 4941415B2 JP 2008168497 A JP2008168497 A JP 2008168497A JP 2008168497 A JP2008168497 A JP 2008168497A JP 4941415 B2 JP4941415 B2 JP 4941415B2
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Japan
Prior art keywords
polycrystalline silicon
silicon
rod
work table
clean
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Application number
JP2008168497A
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English (en)
Japanese (ja)
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JP2009078961A (ja
Inventor
一弘 堺
幸和 宮田
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to JP2008168497A priority Critical patent/JP4941415B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to US12/230,592 priority patent/US7976599B2/en
Priority to EP08163533.6A priority patent/EP2036856B1/en
Priority to CN201310248647.1A priority patent/CN103341368B/zh
Priority to KR1020080086458A priority patent/KR101424288B1/ko
Priority to CN2008102133695A priority patent/CN101385986B/zh
Priority to TW097133745A priority patent/TWI422717B/zh
Publication of JP2009078961A publication Critical patent/JP2009078961A/ja
Priority to US13/067,439 priority patent/US8372372B2/en
Application granted granted Critical
Publication of JP4941415B2 publication Critical patent/JP4941415B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Devices For Use In Laboratory Experiments (AREA)
  • Ventilation (AREA)
JP2008168497A 2007-09-04 2008-06-27 クリーンベンチ Active JP4941415B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2008168497A JP4941415B2 (ja) 2007-09-04 2008-06-27 クリーンベンチ
EP08163533.6A EP2036856B1 (en) 2007-09-04 2008-09-02 Clean bench and method of producing raw material for single crystal silicon
CN201310248647.1A CN103341368B (zh) 2007-09-04 2008-09-02 超净工作台及单晶硅用原料的制造方法
KR1020080086458A KR101424288B1 (ko) 2007-09-04 2008-09-02 클린 벤치 및 단결정 실리콘용 원료의 제조 방법
US12/230,592 US7976599B2 (en) 2007-09-04 2008-09-02 Clean bench and method of producing raw material for single crystal silicon
CN2008102133695A CN101385986B (zh) 2007-09-04 2008-09-02 超净工作台及单晶硅用原料的制造方法
TW097133745A TWI422717B (zh) 2007-09-04 2008-09-03 用於製造單晶矽的原料之清潔台與方法
US13/067,439 US8372372B2 (en) 2007-09-04 2011-06-01 Clean bench and method of producing raw material for single crystal silicon

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007229211 2007-09-04
JP2007229211 2007-09-04
JP2008168497A JP4941415B2 (ja) 2007-09-04 2008-06-27 クリーンベンチ

Publications (2)

Publication Number Publication Date
JP2009078961A JP2009078961A (ja) 2009-04-16
JP4941415B2 true JP4941415B2 (ja) 2012-05-30

Family

ID=40475773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008168497A Active JP4941415B2 (ja) 2007-09-04 2008-06-27 クリーンベンチ

Country Status (4)

Country Link
JP (1) JP4941415B2 (zh)
KR (1) KR101424288B1 (zh)
CN (2) CN101385986B (zh)
TW (1) TWI422717B (zh)

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DE102010040836A1 (de) * 2010-09-15 2012-03-15 Wacker Chemie Ag Verfahren zur Herstellung von Silicium-Dünnstäben
CN102630496A (zh) * 2012-05-08 2012-08-15 高平市金田农业科技发展有限公司 一种负离子超净食用菌接种箱
CN102864952B (zh) * 2012-09-26 2014-12-31 深圳市华星光电技术有限公司 洁净室及其净化单元
CN103050381A (zh) * 2012-12-26 2013-04-17 镇江市港南电子有限公司 一种硅片的气流冲洗方法
CN103170376B (zh) * 2013-04-08 2014-12-10 南通大学 一种双层流净化工作台
CN105934408A (zh) * 2014-02-14 2016-09-07 德山株式会社 清净化多结晶硅块破碎物的制造装置及利用该制造装置制造清净化多结晶硅块破碎物的方法
KR101627532B1 (ko) * 2014-04-22 2016-06-07 (주)동양케미칼 미세 입자의 유입 차단 기능을 구비한 크린 후드
SG11201703107QA (en) 2014-10-14 2017-05-30 Tokuyama Corp Polycrystalline silicon fragment, method for manufacturing polycrystalline silicon fragment, and polycrystalline silicon block fracture device
CN104549576A (zh) * 2014-12-05 2015-04-29 安徽华盛科技控股股份有限公司 Cit消毒型生物安全柜
CN104786202B (zh) * 2015-04-29 2016-03-30 成都蒲江珂贤科技有限公司 防静电多用电工工作台
JP6472732B2 (ja) 2015-09-15 2019-02-20 信越化学工業株式会社 樹脂材料、ビニール製袋、多結晶シリコン棒、多結晶シリコン塊
EP3416461B1 (en) * 2016-02-08 2024-05-15 National Institute of Advanced Industrial Science and Technology Structure for removing static electricity in low-humidity space
JP2017213493A (ja) * 2016-05-31 2017-12-07 ヤマト科学株式会社 低風量ドラフトチャンバー
DE102017208329A1 (de) * 2017-05-17 2018-11-22 Ejot Gmbh & Co. Kg Berührungsfreie Reinigungsvorrichtung
CN107214167A (zh) * 2017-05-27 2017-09-29 延锋伟世通汽车电子有限公司 用于物料清洁的净化台的使用方法
CN108787625B (zh) * 2018-07-18 2023-09-29 郴州市海利微电子科技有限公司 离子风表面处理机
KR102322492B1 (ko) * 2019-12-31 2021-11-08 주식회사 유라코퍼레이션 이물질 제거 장치 및 이를 포함하는 클린 벤치
JP7023325B2 (ja) * 2020-06-17 2022-02-21 信越化学工業株式会社 樹脂材料、ビニール製袋、多結晶シリコン棒、多結晶シリコン塊
CN113426227B (zh) * 2021-07-05 2022-10-04 深圳市中明科技股份有限公司 一种光刻机防静电保护装置
CN116328452B (zh) * 2023-05-29 2023-08-08 通威微电子有限公司 一种净化除尘设备
CN116899311B (zh) * 2023-09-12 2023-12-01 山西广宇化工新材料科技有限公司 一种污水预过滤装置及过滤方法

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JPH05121390A (ja) * 1991-10-29 1993-05-18 Koujiyundo Silicon Kk 酸の除去方法
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JPH07149930A (ja) * 1993-11-30 1995-06-13 Pure Retsukusu:Kk ウェーハ処理方法及び該方法で処理されたウェーハを用いた環境雰囲気清浄度評価法
KR100358412B1 (ko) * 1998-12-22 2002-10-25 니혼 캠브리지 필터 가부시키가이샤 에어필터용 여과재와 그 제조방법
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CN2487441Y (zh) * 2001-05-10 2002-04-24 中国科学院遗传研究所 一种洁净工作台
JP4738636B2 (ja) * 2001-05-29 2011-08-03 株式会社テクノ菱和 防爆型無発塵イオナイザー
TW510027B (en) * 2001-11-13 2002-11-11 Advanced Semiconductor Eng Method for removing electrostatic from molded product in semiconductor encapsulation process
JP2004277223A (ja) * 2003-03-17 2004-10-07 Sumitomo Titanium Corp 高強度多結晶シリコン及びその製造方法
JP4294387B2 (ja) * 2003-06-16 2009-07-08 株式会社トクヤマ シリコンの製造方法
JP4737943B2 (ja) * 2004-03-30 2011-08-03 三洋電機株式会社 クリーンベンチ
US7223303B2 (en) * 2004-08-26 2007-05-29 Mitsubishi Materials Corporation Silicon cleaning method for semiconductor materials and polycrystalline silicon chunk
TWM271336U (en) * 2004-12-17 2005-07-21 Okadenki Ltd Electrostatic eliminator and test device with electrostatic eliminator

Also Published As

Publication number Publication date
CN103341368A (zh) 2013-10-09
CN101385986A (zh) 2009-03-18
KR101424288B1 (ko) 2014-07-31
KR20090024632A (ko) 2009-03-09
TWI422717B (zh) 2014-01-11
CN101385986B (zh) 2013-07-24
CN103341368B (zh) 2016-04-13
TW200918694A (en) 2009-05-01
JP2009078961A (ja) 2009-04-16

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