200918694 九、發明說明 【發明所屬之技術領域】 本發明有關用於根據大小或品質挑選多晶矽的清潔台 ，該多晶矽係作爲製造單晶矽時被熔融的原料，及單晶矽 原料的製法，其包括該多晶矽的清潔程序。 【先前技術】 一般而言，在製造作爲單晶矽原料的多晶矽時，將受 熱的矽晶種棒暴露於包括氯矽烷氣體及氫氣之原料氣體。 多晶矽係由該矽晶種棒沈積爲圓柱形，且壓碎爲適當大小 的碎塊或切成預定長度的棒子，藉以提供單晶矽的原料。 將該多晶矽，單晶矽的原料，包裝且送至單晶矽製造工廠 。包裝之前，根據大小或品質以人工挑選該多晶矽。此挑 選方法係，例如，在清潔台中進行，如日本審查中的專利 申請案，初次申請編號2005 -2795 76，所例示的。該清潔 台包括經過供應空氣的高效能過濾器供應空氣至形成在工 作台上之工作空間的吹風器及自該工作空間吸取空氣的吸 氣孔。該工作空間以清潔空氣經過該吹風器及吸氣孔持續 供應，以致能高度保持該工作台上的清潔度。因此，在挑 選多晶矽時，此程序防止雜質黏附於該多晶矽且經由清潔 空氣的吹拂除去多晶矽本身的粒子。結果，可改善所製造 的單晶矽品質。 附帶地，在清潔台中進行多晶矽大小及品質的挑選時 ，若粒子帶電，該粒子將以靜電黏附於該多晶矽。由此， -4- 200918694 該粒子將無法被清潔空氣吹拂除去。所需要的除去 無法達成。 因此，本發明的目的在於提供能預防粒子黏附 矽以維持所製造的單晶矽品質的清潔台，用於根據 品質挑選多晶矽的清潔台，及單晶矽原料的製法。 【發明內容】 本發明運用下述內容以達到上述目的。 換言之，本發明的清潔台包括：工作台，多晶 在其上；及箱形部分，其包括側板以環繞該工作台 工作空間正面以外的三側，及頂板，其覆蓋該工作 側，其中：供應孔係形成在該箱形部分的頂板中， 清潔空氣至該工作台的上表面；提供游離器，其將 供應孔供應至該工作空間的清潔空氣游離化且除去 台上的靜電；且吸氣孔係形成在該箱形部分的側板 該工作空間吸取空氣。 根據上述的清潔台，經由被正面以外的三側所 工作台上之供應孔供應清潔空氣，且經由該吸氣孔 工作台上側周圍的空氣，藉以使該工作台上側保持 因此，使該工作台上所放置的多晶矽可保持高純度 ，由作爲原料的多晶矽所製造之單晶矽的品質不變 再者，在根據本發明的清潔台中，清潔空氣被 游離化後被噴在該工作台上。該清潔空氣包括正及 。由此，當多晶矽的粒子帶電時，該清潔空氣的正 效應將 於多晶 大小及 矽係放 上方之 空間上 其供應 自該等 該工作 ，其自 環繞的 吸取該 清潔。 。結果 壞。 游離器 負離子 及負離 -5- 200918694 子與該粒子的靜電中和。因此，該粒子上的靜電被消除。 該粒子，自彼除去靜電，失去黏附力，且由此其不會黏附 至該多晶矽且被該清潔空氣的流動吸至該吸氣孔。然後， 自該加工台表面除去該粒子。結果，該粒子可輕易被消除 。因此，可維持以作爲原料之多晶矽所製造的單晶矽的高 品質。 再者，含有正及負離子的清潔空氣可被該游離器供應 至該工作台上側以除去該多晶矽上之粒子的靜電，藉以輕 易地消除該粒子。結果，作爲原料之多晶矽所製造的單晶 矽的品質可被改善。 也可能該清潔台進一步包含連通該等吸氣孔與該等供 應孔之間的連通途徑；供應該清潔空氣至該工作空間的吹 風器；及自該吹風器所供應的清潔空氣除去粒子的過濾器 ，其中該過濾器及吹風器係被提供在該連通途徑中。 在此情形中，經過該吸氣孔所吸取的空氣係透過該過 濾器純化且透過該供應孔被該吹風器傳送至該加工台，藉 以循環該空氣。因此，該工作台上側可保持相當清潔。 也可能該過濾器包含：被設置於該吹風器的上游側用 於除去具有大於預定大小之直徑的粒子之第一過濾器；及 被設置於該吹風器的下游側用於除去通過該第一過濾器的 粒子之第二過濾器。 在此，若該粒子，其隨著被吸至該吸氣孔的空氣一起 自該工作台上側被除去，直接進入該吹風器，其可能阻礙 該吹風器的驅動。在本發明中，無論如何，該除去粒子的 -6- 200918694 過濾器係被提供至連通該吸氣孔與該吹風器之間的連通途 徑。由此，因爲該粒子可自被傳送至該吹風器的空氣完全 被該除去粒子的過濾器除去’其並不會阻礙該吹風器的驅 動。再者，透過該高效過濾器將自該吹風器傳送的空氣導 引至該供應孔，且由此非常清潔的空氣可被供應至該工作 台上側。 本發明之製造單晶矽原料的方法包括：經由與包括氯 矽烷氣體及氫氣之原料氣體的反應沈積柱狀多晶矽；將該 柱狀多晶矽壓碎爲多個多晶矽小塊或將該柱狀多晶矽切成 具有預定長度的棒狀多晶矽；利用酸清洗該多晶矽以除去 黏附於其表面的雜質；將該經清洗的多晶矽浸入純水浴中 以自其表面除去殘留的酸；藉由放在乾燥器中乾燥自該純 水浴取出的多晶矽；及自已經乾燥的多晶矽表面除去靜電 而清潔該多晶矽，其中，在該清潔程序中，該多晶矽係在 上述清潔台的工作台上藉由暴露於該清潔空氣而被清潔。 本發明之製造單晶矽原料之方法包括：經由與包括氯 矽烷氣體及氫氣之原料氣體的反應沈積柱狀多晶矽；將該 柱狀多晶矽壓碎爲多個多晶矽小塊或將該柱狀多晶矽切成 具有預定長度的棒狀多晶矽；利用酸清洗該多晶矽以除去 黏附於其表面的雜質；將該經清洗的多晶矽浸入純水浴中 以自該多晶矽表面除去殘留的酸；藉由放在乾燥器中乾燥 自該純水浴取出的多晶矽；及自已經乾燥的多晶矽表面除 去靜電而清潔該多晶矽，其中，在該清潔程序中，該多晶 矽係暴露於清潔空氣以除去靜電，即藉由將該多晶矽放在 200918694 工作台上同時朝該多晶矽供應經游離的清潔空氣且將該清 潔空氣排至該工作台側邊。 根據上述製造單晶矽原料的方法，可藉由經游離的清 潔空氣自該多晶矽表面除去粒子。由此，可將該多晶矽的 品質改善爲單晶砂的原料。 【實施方式】 本發明的具體例現在將參照圖形予以描述。 第1圖爲根據本發明之例示具體例的清潔台單元正視 圖’且第2圖爲例示該清潔台單元中的空氣流動之側面斷 面圖。如第1圖所示的清潔台單元3 0包括兩個肩並肩提供 的清潔台1 ’其具有相互對稱提供於彼內的組成零件。各 個清潔台1槪要地包括工作台2，其上面提供工作空間3， 及箱子（箱形部分）4。該箱子4包括被配置於該工作台2及 該工作空間3 (在第2圖的右側上）之側面的側板8 a、相對於 該二清潔台1相互毗鄰的情形配置的側板8 b，及覆蓋該等 側板8 a及8 b之上側的頂板1 6。 該工作台2包括水平提供且具有預定高度的工作區2a 。作業員根據大小及品質自正面（第2圖的左側）伸進去挑 選該工作區2a上的多晶砂。再者，提供工作台連通途徑5 以允許該工作表面2a與接近該箱子4之側板8a的工作台2 之連通下側表面2b。該工作台連通途徑5開在該工作表面 2a的一部分上，且該開啓部分爲工作台吸氣孔2c。藉由 網覆蓋該工作台吸氣孔2 c。 200918694 該箱子4，如上所述，包括環繞該工作台2及工作空間 3側面的側板8 a及8 b，及從頂部覆蓋該側板8 a及8 b的頂 板1 6。將該箱子4形成爲內部中空的。該箱子4利用與該工 作台2之兩個側面平行的側板8a及8b依垂直方向延伸。此 外，該箱子4，如第2圖所示，包括垂直延伸部分4a，其中 吹風器1 1 (述於後文）係配置於其上方內側部分中，及配置 在該垂直延伸部分4a上方以經由該頂板1 6自頂部覆蓋該 工作空間3的上延伸部分4b。 在該工作台2後面之側板8a的垂直延伸部分4a內部， 如第2圖所示，爲上下延伸的連通途徑7。在該工作台2之 下側表面2b及該側板8 a下部中形成連接部分9以連通該連 通途徑7與該工作台連通途徑5。再者，將吸氣孔l〇a形成 在該垂直延伸部分4 a之側板8 a中的工作台2上側周圍，且 使該工作空間3與該連通途徑7連通。而且，將吸氣孔i 〇b 形成在面朝該清潔台單元3 0側面之側板8 b中的工作台2上 側周圍’且使該工作空間3與該連通途徑7連通。 將該垂直延伸部分4a之上方內側部分中所提供的吹 風器11配置成與分開該垂直延伸部分4a與該上延伸部分 4b的隔壁12接觸。該吹風器11在該垂直延伸部分4a之連 通途徑7中吸取空氣且傳送該空氣至該上延伸部分4b。此 外，在該連通途徑7中之吹風器11與該等吸氣孔1〇a、l〇b 之間（該吹風器1 1的上游側）提供除去粒子的過濾器（第一 過爐器）13。將透過該等吸氣孔1〇3、l〇b及該工作台吸氣 孔2 c所吸取的空氣經過該除去粒子的過濾器丨3傳送至該 -9- 200918694 吹風器1 1。該除去粒子的過濾器1 3可，例如，除去具有約 1 0 μιη或更大之直徑的粒子。 經由該隔壁1 2將該上延伸部分4 b與該垂直延伸部分 4a形成爲單獨本體。在該隔壁12下與該隔壁12下部相距 預定距離（該吹風器11的下游側）之上延伸部分4b中提供具 有平板形的高效過濾器（第二過濾器）15。在本具體例中， 該高效過濾器15係由可大舉除去通過的空氣中所包括之粒 子（具有’例如’ 〇 . 3 μηι或更大之直徑範圍）的HE P A過濾 器構成以獲得約1 〇〇%的清潔度。經過該吹風器丨1傳送至 該上延伸部分4b中的空氣經過該高效過濾器15變成清潔 空氣。 將多個孔提供於該上延伸部分之頂板1 6中以覆蓋該工 作空間3。該多個孔爲供應清潔空氣至該工作空間3的供應 孔1 6 a。將通過該高效過濾器1 5的空氣透過該頂板1 6的多 個供應孔1 6 a均勻供應至末端的工作空間3下部。在該頂 板1 6下側（該工作空間3的一側）上提供多個照明器丨7 (在本 具體例中4個）’例如螢光燈。在規律間隔下依水平方向配 置該照明器1 7以照亮該工作台2的整個工作表面2 a。 在該頂板1 6下側（該工作空間3之一側）上提供游離器 20同時配置多個照明器17。在該游離器20上提供多個噴嘴 20a (在本具體例中8個）且面朝下。該游離器20藉由透過該 等噴嘴20a所供應的電暈放電等用於將一部分清潔空氣游 離化爲正性或負性，該空氣經過該頂板1 6的供應孔1 6a被 供應至該工作空間3。該游離器20可爲不同類型的傳統游離 -10- 200918694 器’除了電暈放電以外該游離器可藉由各種不同的方法， 例如使用UV射線、輕X射線及輻射材料將清潔空氣游離 化。 其後，將描述使用上述清潔台單元30製備用於單晶矽 材料的多晶矽之方法。 該方法包括經由與包括氯矽烷氣體及氫氣之原料氣體 的反應沈積柱狀多晶矽；將該柱狀多晶矽壓碎爲多個多晶 矽小塊或將該柱狀多晶矽切成具有預定長度的棒狀多晶矽 :利用酸清洗該多晶矽以除去黏附於其表面的雜質；將該 經清洗的多晶矽浸入純水浴中以自其表面除去殘留的酸； 藉由放在乾燥器中乾燥自該純水浴取出的多晶矽；自已經 乾燥的多晶矽表面除去靜電而清潔該多晶矽；及包裝該多 晶矽以供運送至製造單晶矽的工廠。 首先，在該矽沈積程序中，根據所謂的西門子法 (Siemens process)，如第3圖所示，將反應器40中所配置 的矽晶種棒4 1加熱，例如，藉由電流加熱，至高溫。接著 ，經過原料氣體供應管42將原料氣體供應至該反應器40內 與該矽晶種棒4 1接觸，藉以經由還原反應沈積多晶矽R以 在該矽晶種棒4 1周圍形成柱狀物。該反應器40中剩餘的氣 體經由氣體排放管43排至外界。 在壓碎程序中，藉由熱衝擊，例如，加熱及快速冷卻 ，壓碎該矽沈積程序中所製造的柱狀多晶矽R。然後，藉 由鎚子敲擊該柱狀多晶矽R以便壓碎，藉以形成第4圖所 示之多晶矽的小塊C。 -11 - 200918694 在切削程序中，使用鑽石切割器將該柱狀多晶矽R切 成預定長度，藉以形成棒狀多晶矽C。 在清潔程序中’使用包括硝酸及氫氟酸的清潔溶液清 潔呈棒狀的多晶砂小塊以除去黏附於其表面的雜質。在浸 漬程序中，將已經完全被清潔的多晶矽浸入純水浴中以除 去剩餘的酸。 在乾燥程序中’將已經浸漬過的多晶砂放在真空乾燥 器中以自其表面除去水分。 在清潔程序中’使用上述清潔台單元3 0使該多晶矽與 游離化清潔空氣接觸自該多晶砂表面除去粒子。首先，將 該多晶砂放在該清潔台1之工作台2上。接著，當自該工作 台2供應游離化清潔空氣時，自該工作台2—側吸取空氣然 後排放。因此，該多晶矽及該工作台2的表面係暴露於清 潔空氣以除去靜電，所以粒子與空氣流動一起排放。 下文中以多晶矽的小塊C描述清潔程序。如第5圖所 示，將聚乙烯薄片52舖在聚乙烯碟51上，且將多個多晶矽 小塊C放在該薄片52上。將該碟51放在該清潔台1之工作 台2上且自該清潔台1上方供應游離化清潔空氣。在此狀況 下，檢查個別多晶矽小塊C的大小或外觀而挑選且放在聚 乙烯包裝袋53中。 在根據本具體例之清潔台單元30的清潔台1中，該吹 風器1〗經過高效過濾器1 5供應該清潔空氣至該工作空間3 。將透過被提供到該工作空間3下部及該工作台吸氣孔2c 中之吸氣孔1 〇a、1 Ob所吸取的空氣經過該工作台連通途 -12- 200918694 徑5及連通途徑7傳送至該吹風器11，藉以執行空氣循 由此，被供應至該工作空間3的空氣由於配置於該工 間3之前的高效過濾器1 5而具有約1 〇 0 %的清潔度’且 可將該工作空間3保持得非常清潔。因此’所挑選的 矽總是在清潔環境中以致不會與雜質混合以保持高純 因此，可預防使用作爲原料的多晶矽所製造之單晶矽 變差。 在本具體例中，藉由配置在該頂板1 6下側（該工 間3之一側）上的游離器20將透過該供應孔16a所供應 潔空氣部分游離化。該清潔空氣包括正及負離子’且 若該粒子帶電以該多晶矽粒子的靜電電性中和該正及 子，藉以除去靜電。靜電被除去的粒子將喪失黏附力 此，該粒子不會黏附於該多晶矽且會被該清潔空氣流 至該等吸氣孔1 0a、1 Ob或該工作台吸氣孔2c。結果 粒子係自該工作台2的表面及該工作空間3被除去。如 述，由於靜電自該粒子被除去以致該粒子可自該工f 輕易被消除。因此，由作爲原料之多晶矽所製造的單 可保持其高品質。 若該多晶矽粒子，其係自該工作台2的表面及該 空間3與被吸至該等吸氣孔1 〇 a、1 0 b或該工作台吸氣 的空氣一起被除去，直接進入該吹風器11，該吹風器 能無法適當被驅動。在本具體例中，無論如何’將除 子的過濾器13提供在該連通途徑7的吸氣孔l〇a、10b 吹風器1 1之間。由此，該粒子可自被該除去粒子的過 環。 作空 由此 多晶 度。 品質 作空 的清 由此 負離 。因 動吸 ，該 上所 F台2 晶砂 工作 孔2c 1 1可 去粒 與該 濾器 -13- 200918694 13傳送至該吹風器11的空氣完全被除去。結果，該吹風器 1 1可適當地被驅動而沒有麻煩，且空氣可重複地循環。 在包裝程序中，將該多晶矽，藉此純化，包裝在被傳 送至製造單晶矽的工廠之聚乙烯袋中。將此多晶矽提供作 爲單晶矽的原料。如上所述’該多晶矽表面已經藉由該清 潔程序在該清潔台中純化，且由此可製造高品質單晶矽。 儘管上文已經描述運用根據本發明之一具體例的清洗 台1之清潔台單元3 0，但是本發明並不限於此。很顯然熟 悉此技藝者可在本發明的範圍以內完成不同的修飾及變更 〇 儘管該等具體例已經配合清潔多晶矽小塊而例示，但 是根據本發明之作爲單晶矽原料的多晶矽可任意將柱狀多 晶砂壓碎爲多晶砂小塊或將其切成具有預定長度的棒狀多 晶砍而製備。有關棒狀多晶砂，在該清潔程序中，例如， 可將棒子逐個放在該薄片52上檢查外觀同時暴露於清潔空 氣，然後逐個放入包裝袋中。 儘管本發明的具體例已經在上文中描述且例示，但是 應該了解的是這些爲本發明的示範且不得認爲限制。增加 、刪除、取代及其他修飾可被完成而不會悖離本發明的精 神或範圍。因此，不得認爲本發明受到前述說明所限制， 且僅受到後附申請專利範圍的範圍所限制。 【圖式簡單說明】 第1圖爲根據本發明之具體例的清潔台槪略構形。 -14- 200918694 第2圖爲例示根據本發明之例示具體例的清潔台單元 中的空氣流動之側面斷面圖。 第3圖爲例示製造單晶矽原料時用於沈積程序的反應 器之槪略斷面圖。 第4圖爲例示被壓碎爲小塊自該反應器取出的棒狀多 晶矽正面圖。 第5圖爲例示在第1圖之清潔台的工作台上清潔多晶砂 小塊的範例圖。 【主要元件符號說明】 1 :清潔台 2 :工作台 2 a :工作區 2b :下側表面 2 c :工作台吸氣孔 3 :工作空間 4 :箱子 4 a :垂直延伸部分 4b :上延伸部分 5 :工作台連通途徑 7 :連通途徑 8 a :側板 8b :側板 9 :連接部分 -15- 200918694 1 0 a :吸氣孔 1 0 b :吸氣孔 1 1 :吹風器 1 2 :隔壁 1 3 :除去粒子的過濾器 1 5 :高效過濾器 1 6 :頂板 1 6 a :供應孔 1 7 :照明器 20 :游離器 2 0 a :噴嘴 3 0 :清潔台單元 40 :反應器 41 :矽晶種棒 42 :原料氣體供應管 43 :氣體排放管 5 1 :聚乙烯碟 5 2 :聚乙烯薄片 53 :聚乙烯包裝袋 R :多晶矽 C :多晶矽小塊200918694 IX. Description of the Invention The present invention relates to a cleaning station for selecting polycrystalline germanium according to size or quality, which is a raw material for melting a single crystal crucible, and a method for producing a single crystal germanium raw material. A cleaning procedure including the polysilicon. [Prior Art] In general, in the production of polycrystalline germanium as a single crystal germanium raw material, a heated twin seeded rod is exposed to a raw material gas including chlorodecane gas and hydrogen. The polycrystalline lanthanum is deposited into a cylindrical shape by the twin seeding rod, and is crushed into pieces of an appropriate size or cut into rods of a predetermined length to provide a raw material of single crystal ruthenium. The raw material of the polycrystalline germanium and single crystal germanium is packaged and sent to a single crystal crucible manufacturing plant. Prior to packaging, the polysilicon is manually selected based on size or quality. This selection method is carried out, for example, in a cleaning station, as exemplified in the Japanese Patent Application Laid-Open No. 2005-279576. The cleaning station includes a blower that supplies air through a high-performance filter that supplies air to a work space formed on the work surface and an air intake hole that draws air from the work space. The workspace is continuously supplied with clean air through the blower and the suction port so as to maintain a high degree of cleanliness on the table. Therefore, when the polysilicon is selected, this procedure prevents impurities from adhering to the polysilicon and removes the particles of the polysilicon itself via blowing of clean air. As a result, the quality of the produced single crystal germanium can be improved. Incidentally, when the size and quality of the polycrystalline silicon are selected in the cleaning station, if the particles are charged, the particles will adhere to the polycrystalline silicon by static electricity. Thus, -4-200918694 the particles will not be removed by the clean air. The removal required is not possible. Accordingly, an object of the present invention is to provide a cleaning station capable of preventing particle adhesion of ruthenium to maintain the quality of the produced single crystal ruthenium, a cleaning station for selecting polycrystalline enamel according to quality, and a method for preparing a single crystal ruthenium raw material. SUMMARY OF THE INVENTION The present invention employs the following contents to achieve the above object. In other words, the cleaning station of the present invention comprises: a work table on which the polycrystalline body is; and a box-shaped portion including a side plate to surround three sides other than the front surface of the work space of the work table, and a top plate covering the working side, wherein: a supply hole is formed in the top plate of the box-shaped portion to clean the air to the upper surface of the table; a free device is provided which dissipates the supply air supplied to the working space and removes static electricity on the table; A venting system is formed in the side panel of the box-shaped portion to draw air from the working space. According to the cleaning station described above, the cleaning air is supplied through the supply holes on the table on the three sides other than the front surface, and the air around the upper side of the table is maintained through the suction holes, whereby the upper side of the table is held, thereby making the table The polycrystalline germanium placed thereon can maintain high purity, and the quality of the single crystal germanium produced from the polycrystalline germanium as a raw material remains unchanged. In the cleaning station according to the present invention, the clean air is released and sprayed onto the table. The clean air includes positive and negative. Thus, when the particles of polycrystalline silicon are charged, the positive effect of the clean air will be from the polycrystalline size and the space above the tethered system, which is supplied from such a work, which is self-surrounding to draw the cleaning. . The result is bad. Freezer Negative ion and negative ion -5- 200918694 Sub-electrostatic neutralization of the particle. Therefore, the static electricity on the particles is eliminated. The particles, from which they are electrostatically removed, lose their adhesion and thus do not adhere to the polysilicon and are attracted to the suction holes by the flow of the clean air. The particles are then removed from the surface of the processing station. As a result, the particles can be easily eliminated. Therefore, the high quality of the single crystal germanium produced by the polycrystalline silicon as a raw material can be maintained. Further, clean air containing positive and negative ions can be supplied to the upper side of the stage by the freezer to remove static electricity from the particles on the polycrystalline silicon, thereby easily eliminating the particles. As a result, the quality of the single crystal germanium produced by the polycrystalline silicon as a raw material can be improved. It is also possible that the cleaning station further comprises a communication path connecting the suction holes and the supply holes; a blower supplying the clean air to the work space; and filtering of particles removed from the clean air supplied by the blower The filter and the blower are provided in the communication path. In this case, the air sucked through the suction port is purified through the filter and transmitted to the processing station through the supply port through the supply port, thereby circulating the air. Therefore, the upper side of the table can be kept quite clean. It is also possible that the filter comprises: a first filter disposed on an upstream side of the blower for removing particles having a diameter greater than a predetermined size; and a downstream side disposed on the blower for removing the first pass The second filter of the particles of the filter. Here, if the particles are removed from the upper side of the table along with the air sucked into the suction holes, they directly enter the blower, which may hinder the driving of the blower. In the present invention, in any case, the particle-removing -6-200918694 filter is provided to communicate the communication path between the suction hole and the blower. Thus, because the particles can be completely removed from the filter that removes the particles from the air that is delivered to the blower, it does not hinder the actuation of the blower. Further, air delivered from the blower is guided to the supply hole through the high efficiency filter, and thus the very clean air can be supplied to the upper side of the table. The method for producing a single crystal germanium raw material of the present invention comprises: depositing a columnar polycrystalline silicon by reaction with a raw material gas including a chlorodecane gas and hydrogen; crushing the columnar polycrystalline silicon into a plurality of polycrystalline tantalum small pieces or cutting the columnar polycrystalline tantalum Forming a rod-shaped polycrystalline crucible having a predetermined length; cleaning the polycrystalline crucible with an acid to remove impurities adhering to the surface thereof; immersing the washed polycrystalline crucible in a pure water bath to remove residual acid from the surface thereof; drying in a desiccator a polycrystalline germanium taken out from the pure water bath; and the polycrystalline germanium is cleaned by removing static electricity from the surface of the dried polycrystalline crucible, wherein in the cleaning process, the polycrystalline germanium is exposed on the work surface of the cleaning station by exposure to the clean air clean. The method for producing a single crystal germanium raw material according to the present invention comprises: depositing a columnar polycrystalline silicon through reaction with a raw material gas including a chlorodecane gas and hydrogen; crushing the columnar polycrystalline silicon into a plurality of polycrystalline tantalum small pieces or cutting the columnar polycrystalline tantalum Forming a rod-shaped polycrystalline crucible having a predetermined length; cleaning the polycrystalline crucible with an acid to remove impurities adhering to the surface thereof; immersing the washed polycrystalline crucible in a pure water bath to remove residual acid from the surface of the polycrystalline crucible; by placing in a desiccator Drying the polycrystalline germanium removed from the pure water bath; and cleaning the polycrystalline germanium from the surface of the dried polycrystalline germanium, wherein the polycrystalline germanium is exposed to clean air to remove static electricity during the cleaning process, ie by placing the polycrystalline germanium 200918694 Simultaneously supply free clean air to the polysilicon and discharge the clean air to the side of the table. According to the above method for producing a single crystal germanium raw material, particles can be removed from the surface of the polycrystalline silicon by free clean air. Thereby, the quality of the polycrystalline silicon can be improved to the raw material of the single crystal sand. [Embodiment] Specific examples of the present invention will now be described with reference to the drawings. Fig. 1 is a front elevational view of a cleaning station unit according to an exemplary embodiment of the present invention, and Fig. 2 is a side cross-sectional view illustrating air flow in the cleaning station unit. The cleaning table unit 30 shown in Fig. 1 includes two cleaning stations 1' provided side by side with their constituent parts symmetrically provided in each other. Each of the cleaning stations 1 preferably includes a work table 2 on which a work space 3 and a box (box portion) 4 are provided. The case 4 includes a side plate 8a disposed on a side of the work table 2 and the work space 3 (on the right side of FIG. 2), and a side plate 8b disposed adjacent to the two cleaning tables 1, and Covering the top plate 16 on the upper side of the side panels 8a and 8b. The work table 2 includes a work area 2a provided horizontally and having a predetermined height. The operator pushes in from the front (the left side of Fig. 2) according to the size and quality to select the polycrystalline sand on the work area 2a. Further, a table communication path 5 is provided to allow the work surface 2a to communicate with the lower side surface 2b of the table 2 close to the side plate 8a of the case 4. The table communication path 5 is opened on a portion of the work surface 2a, and the open portion is a table suction hole 2c. The table suction hole 2c is covered by the net. 200918694 The box 4, as described above, includes side panels 8a and 8b surrounding the table 2 and the side of the workspace 3, and a roof panel 16 covering the side panels 8a and 8b from the top. The case 4 is formed to be hollow inside. The case 4 extends in the vertical direction by the side plates 8a and 8b which are parallel to the two side faces of the table 2. Further, the case 4, as shown in Fig. 2, includes a vertically extending portion 4a in which a hair dryer 1 1 (described later) is disposed in an upper inner portion thereof and disposed above the vertically extending portion 4a to pass The top plate 16 covers the upper extension portion 4b of the work space 3 from the top. Inside the vertically extending portion 4a of the side plate 8a behind the table 2, as shown in Fig. 2, is a communication path 7 extending up and down. A connecting portion 9 is formed in the lower surface 2b of the table 2 and the lower portion of the side plate 8a to communicate the communication path 7 with the table communication path 5. Further, a suction hole 10a is formed around the upper side of the table 2 in the side plate 8a of the vertically extending portion 4a, and the working space 3 is communicated with the communication path 7. Further, a suction hole i 〇b is formed around the upper side of the table 2 in the side plate 8 b facing the side of the cleaning table unit 30 and the working space 3 is communicated with the communication path 7. The blower 11 provided in the upper inner portion of the vertically extending portion 4a is disposed in contact with the partition wall 12 separating the vertically extending portion 4a from the upper extending portion 4b. The blower 11 draws air in the communication path 7 of the vertically extending portion 4a and conveys the air to the upper extension portion 4b. Further, a filter for removing particles (first furnace) is provided between the blower 11 in the communication path 7 and the suction holes 1a, lb (on the upstream side of the blower 11) 13. The air sucked through the suction holes 1〇3, l〇b and the table suction port 2c is sent to the -9-200918694 blower 1 through the particle-removing filter 丨3. The particle-removing filter 13 can, for example, remove particles having a diameter of about 10 μm or more. The upper extension portion 4b and the vertically extending portion 4a are formed as separate bodies via the partition wall 12. A high-efficiency filter (second filter) 15 having a flat plate shape is provided in the extending portion 4b above the partition wall 12 at a predetermined distance from the lower portion of the partition wall 12 (the downstream side of the blower 11). In the present embodiment, the high-efficiency filter 15 is constituted by a HE PA filter having particles (including a diameter range of ', for example, μ. 3 μηι or more) which can be largely removed by passing air to obtain about 1 〇〇% cleanliness. The air sent to the upper extension portion 4b through the blower 丨1 passes through the high efficiency filter 15 to become clean air. A plurality of holes are provided in the top plate 16 of the upper extension to cover the work space 3. The plurality of holes are supply holes 16 6 a for supplying clean air to the work space 3. The air passing through the high efficiency filter 15 is uniformly supplied to the lower portion of the working space 3 at the end through the plurality of supply holes 16a of the top plate 16. On the lower side of the top plate 16 (on one side of the work space 3), a plurality of illuminators 7 (four in this specific example) are provided, for example, fluorescent lamps. The illuminator 17 is arranged in a horizontal direction at regular intervals to illuminate the entire working surface 2a of the table 2. A freezer 20 is provided on the lower side of the top plate 16 (one side of the working space 3) while a plurality of illuminators 17 are disposed. A plurality of nozzles 20a (eight in this embodiment) are provided on the freezer 20 and face down. The freezer 20 is used to dissipate a part of the clean air into positive or negative by a corona discharge or the like supplied through the nozzles 20a, and the air is supplied to the work through the supply hole 16a of the top plate 16. Space 3. The freezer 20 can be a different type of conventional free -10-200918694 device. In addition to corona discharge, the freezer can dissipate clean air by a variety of different methods, such as using UV rays, light X-rays, and radiant materials. Hereinafter, a method of preparing a polycrystalline germanium for a single crystal germanium material using the above-described cleaning station unit 30 will be described. The method includes depositing a columnar polycrystalline silicon via reaction with a source gas comprising chlorodecane gas and hydrogen; crushing the columnar polycrystalline silicon into a plurality of polycrystalline tantalum pieces or cutting the columnar polycrystalline silicon into rod-shaped polycrystalline silicon having a predetermined length: The polycrystalline silicon is washed with an acid to remove impurities adhering to the surface thereof; the washed polycrystalline germanium is immersed in a pure water bath to remove residual acid from the surface thereof; and the polycrystalline germanium taken out from the pure water bath is dried by being placed in a desiccator; The dried polycrystalline germanium surface is cleaned of static electricity to clean the polycrystalline germanium; and the polycrystalline germanium is packaged for transport to a factory that manufactures single crystal germanium. First, in the crucible deposition process, according to the so-called Siemens process, as shown in FIG. 3, the twin seeding rods 41 disposed in the reactor 40 are heated, for example, by current heating, to high temperature. Next, the material gas is supplied into the reactor 40 through the material gas supply pipe 42 to be in contact with the seed crystal rod 4 1 , whereby the polycrystalline silicon R is deposited via a reduction reaction to form a column around the seed crystal rod 4 1 . The gas remaining in the reactor 40 is discharged to the outside via the gas discharge pipe 43. In the crushing process, the columnar polycrystalline silicon R produced in the tantalum deposition process is crushed by thermal shock, for example, heating and rapid cooling. Then, the columnar polycrystalline silicon R is tapped by a hammer to be crushed, thereby forming a small block C of the polycrystalline silicon shown in Fig. 4. -11 - 200918694 In the cutting procedure, the columnar polycrystalline silicon R is cut into a predetermined length using a diamond cutter to form a rod-shaped polycrystalline crucible C. In the cleaning procedure, a small piece of polycrystalline sand which is rod-shaped is cleaned using a cleaning solution containing nitric acid and hydrofluoric acid to remove impurities adhering to the surface thereof. In the dipping procedure, the polycrystalline silicon which has been completely cleaned is immersed in a pure water bath to remove the remaining acid. The already impregnated polycrystalline sand is placed in a vacuum dryer in a drying process to remove moisture from its surface. The polycrystalline silicon is contacted with the free cleaning air from the surface of the polycrystalline sand using a cleaning station unit 30 in the cleaning process. First, the polycrystalline sand is placed on the table 2 of the cleaning station 1. Next, when the cleaned air is supplied from the table 2, the air is sucked from the side of the table 2 and then discharged. Therefore, the surface of the polysilicon and the stage 2 is exposed to clean air to remove static electricity, so that the particles are discharged together with the air flow. The cleaning procedure is described below in the small block C of polycrystalline germanium. As shown in Fig. 5, a polyethylene sheet 52 is laid on the polyethylene dish 51, and a plurality of polycrystalline crumbs C are placed on the sheet 52. The dish 51 is placed on the table 2 of the cleaning station 1 and free clean air is supplied from above the cleaning table 1. In this case, the size or appearance of the individual polycrystalline crumb pieces C is checked and selected and placed in the polyethylene packaging bag 53. In the cleaning table 1 of the cleaning table unit 30 according to the present specific example, the blower 1 supplies the cleaning air to the working space 3 via the high efficiency filter 15. The air taken through the suction holes 1 〇a, 1 Ob provided to the lower portion of the working space 3 and the suction opening 2c of the table passes through the table communication path -12-200918694, path 5 and communication path 7 To the blower 11, whereby the air circulation is performed, whereby the air supplied to the working space 3 has a cleanliness of about 1% 0% due to the high efficiency filter 15 disposed before the work booth 3 and can This workspace 3 is kept very clean. Therefore, the selected crucible is always in a clean environment so as not to be mixed with impurities to maintain high purity. Therefore, it is possible to prevent the deterioration of the single crystal crucible produced by using polycrystalline germanium as a raw material. In this embodiment, the clean air portion supplied through the supply hole 16a is released by the freezer 20 disposed on the lower side of the top plate 16 (one side of the work 3). The clean air includes positive and negative ions' and if the particles are charged, the electrostatic properties of the polycrystalline germanium particles neutralize the positive ions, thereby removing static electricity. The particles from which the static electricity is removed will lose the adhesion. Therefore, the particles will not adhere to the polysilicon and will be flowed by the clean air to the suction holes 10a, 1 Ob or the table suction holes 2c. As a result, the particle system is removed from the surface of the table 2 and the working space 3. As described, since the static electricity is removed from the particles, the particles can be easily eliminated from the work. Therefore, the single sheet made of the polycrystalline silicon as a raw material can maintain its high quality. If the polycrystalline silicon particles are removed from the surface of the table 2 and the space 3 together with the air sucked into the suction holes 1 〇a, 10b or the table, the air is directly introduced into the air. The blower 11 cannot be properly driven. In this specific example, the filter 13 of the separator is provided between the air suction holes 10a, 10b of the communication path 7 in any case. Thus, the particles can be self-looped by the removed particles. Empty and thus polycrystalline. The quality of the empty clear is thus negative. Due to the dynamic suction, the upper stage 2 crystal sand working hole 2c 1 1 can be granulated and the air delivered to the blower 11 from the filter -13- 200918694 13 is completely removed. As a result, the blower 11 can be appropriately driven without trouble, and the air can be repeatedly circulated. In the packaging process, the polycrystalline crucible is purified therefrom and packaged in a polyethylene bag that is transferred to a factory that manufactures single crystal crucibles. This polycrystalline germanium is supplied as a raw material for single crystal germanium. As described above, the surface of the polycrystalline silicon has been purified in the cleaning station by the cleaning procedure, and thereby high quality single crystal germanium can be produced. Although the cleaning station unit 30 using the cleaning station 1 according to an embodiment of the present invention has been described above, the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and changes can be made within the scope of the invention. Although the specific examples have been exemplified in connection with cleaning the polycrystalline crucible, the polycrystalline crucible as a single crystal germanium raw material according to the present invention can be arbitrarily placed. The polycrystalline sand is crushed into small pieces of polycrystalline sand or cut into rod-shaped polycrystalline cuts having a predetermined length. Regarding the rod-shaped polycrystalline sand, in the cleaning procedure, for example, the rods may be placed one by one on the sheet 52 to check the appearance while being exposed to the clean air, and then placed one by one in the package. While the specific examples of the invention have been described and illustrated in the foregoing, it is understood that these are exemplary of the invention and are not considered as limiting. Additions, deletions, substitutions, and other modifications can be made without departing from the spirit or scope of the invention. Therefore, the invention is not to be considered as limited by the foregoing description, but only by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a cleaning table according to a specific example of the present invention. -14- 200918694 Fig. 2 is a side sectional view showing the flow of air in the cleaning table unit according to an exemplary embodiment of the present invention. Fig. 3 is a schematic cross-sectional view showing a reactor for a deposition process when a single crystal germanium raw material is produced. Fig. 4 is a front view showing a rod-shaped polycrystalline silicon which is crushed into small pieces and taken out from the reactor. Fig. 5 is a view showing an example of cleaning the polycrystalline sand small pieces on the table of the cleaning table of Fig. 1. [Description of main component symbols] 1 : Cleaning station 2 : Workbench 2 a : Working area 2b : Lower side surface 2 c : Workbench suction hole 3 : Working space 4 : Box 4 a : Vertically extending portion 4b : Upper extension 5: Workbench communication path 7: Communication path 8 a: Side plate 8b: Side plate 9: Connection portion -15- 200918694 1 0 a : Suction hole 1 0 b : Suction hole 1 1 : Hair dryer 1 2 : Next wall 1 3 : filter for removing particles 1 5 : high efficiency filter 1 6 : top plate 1 6 a : supply hole 1 7 : illuminator 20 : free device 2 0 a : nozzle 3 0 : cleaning station unit 40 : reactor 41 : twin Rod 42: material gas supply pipe 43: gas discharge pipe 5 1 : polyethylene dish 5 2 : polyethylene sheet 53 : polyethylene bag R : polycrystalline crucible C : polycrystalline crucible