JP4939769B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4939769B2
JP4939769B2 JP2005127336A JP2005127336A JP4939769B2 JP 4939769 B2 JP4939769 B2 JP 4939769B2 JP 2005127336 A JP2005127336 A JP 2005127336A JP 2005127336 A JP2005127336 A JP 2005127336A JP 4939769 B2 JP4939769 B2 JP 4939769B2
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Japan
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region
film
insulating film
semiconductor
channel formation
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Expired - Fee Related
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JP2005127336A
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Japanese (ja)
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JP2005340791A (ja
JP2005340791A5 (enExample
Inventor
清 加藤
豊 塩野入
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005127336A priority Critical patent/JP4939769B2/ja
Publication of JP2005340791A publication Critical patent/JP2005340791A/ja
Publication of JP2005340791A5 publication Critical patent/JP2005340791A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/217—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only conductor-insulator-semiconductor capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2005127336A 2004-04-28 2005-04-26 半導体装置 Expired - Fee Related JP4939769B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005127336A JP4939769B2 (ja) 2004-04-28 2005-04-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004132813 2004-04-28
JP2004132813 2004-04-28
JP2005127336A JP4939769B2 (ja) 2004-04-28 2005-04-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2005340791A JP2005340791A (ja) 2005-12-08
JP2005340791A5 JP2005340791A5 (enExample) 2008-06-05
JP4939769B2 true JP4939769B2 (ja) 2012-05-30

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JP2005127336A Expired - Fee Related JP4939769B2 (ja) 2004-04-28 2005-04-26 半導体装置

Country Status (4)

Country Link
US (1) US7825447B2 (enExample)
JP (1) JP4939769B2 (enExample)
KR (1) KR101155943B1 (enExample)
WO (1) WO2005106961A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4438685B2 (ja) * 2005-05-23 2010-03-24 セイコーエプソン株式会社 透明導電膜とその形成方法、電気光学装置、及び電子機器
TWI300672B (en) * 2006-01-27 2008-09-01 Au Optronics Corp System integrated organic light-emitting display
JP5222479B2 (ja) * 2006-03-03 2013-06-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE102006013077A1 (de) * 2006-03-22 2007-09-27 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterbauelement mit Sekundärpassivierungsschicht und zugehöriges Herstellungsverfahren
EP1863090A1 (en) 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP2008134694A (ja) * 2006-11-27 2008-06-12 Philtech Inc Ｒｆパウダーの付加方法およびｒｆパウダー付加基体シート
JP2008134695A (ja) * 2006-11-27 2008-06-12 Philtech Inc 基体データ管理システム
JP2008135446A (ja) * 2006-11-27 2008-06-12 Philtech Inc Ｒｆパウダーの製造方法
JP2008134815A (ja) * 2006-11-28 2008-06-12 Philtech Inc Ｒｆパウダーの提供方法およびｒｆパウダー含有液
JP2008134816A (ja) * 2006-11-28 2008-06-12 Philtech Inc Ｒｆパウダー粒子、ｒｆパウダー、およびｒｆパウダーの励起方法
JP2008135951A (ja) * 2006-11-28 2008-06-12 Philtech Inc Ｒｆパウダー粒子、ｒｆパウダー、およびｒｆパウダー含有基体
JP2008136019A (ja) * 2006-11-29 2008-06-12 Philtech Inc 磁界結合装置および読取り装置
WO2008081699A1 (ja) * 2006-12-28 2008-07-10 Philtech Inc. 基体シート
KR100915765B1 (ko) * 2007-12-26 2009-09-04 주식회사 동부하이텍 반도체 소자의 테스트 패턴 및 그 제조 방법
WO2010032599A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8227846B2 (en) * 2010-02-12 2012-07-24 Advanced Micro Devices, Inc. Systems and methods for a continuous-well decoupling capacitor
DE102011080620B4 (de) * 2011-08-08 2014-06-05 Siemens Aktiengesellschaft Verfahren für die Beschichtung eines Isolationsbauteils und Isolationsbauteil sowie elektrisch leitfähiges Heizkabel
CN102280497A (zh) * 2011-09-01 2011-12-14 上海宏力半导体制造有限公司 累积型场效应管可变电容及其制造工艺
JP5904735B2 (ja) * 2011-09-20 2016-04-20 株式会社東芝 磁界共鳴方式回路
KR20140010815A (ko) 2012-07-17 2014-01-27 에스케이하이닉스 주식회사 Ｍｏｓ 커패시터, 그 형성 방법 및 그를 이용한 반도체 장치
TWI550885B (zh) * 2012-10-31 2016-09-21 天鈺科技股份有限公司 半導體電容及具有該半導體電容的半導體裝置
US9130478B2 (en) * 2013-03-08 2015-09-08 Infineon Technologies Ag Rectifier with bridge circuit and parallel resonant circuit
US9269315B2 (en) * 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
CN104123961B (zh) * 2014-07-21 2017-06-16 中国人民解放军国防科学技术大学 一种具有改进型n阱电容的单栅非易失存储单元
JP7592588B2 (ja) * 2019-06-07 2024-12-02 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0744256B2 (ja) 1988-11-17 1995-05-15 日本電気株式会社 半導体集積回路
US5501989A (en) 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
JPH0745789A (ja) 1993-08-03 1995-02-14 Nec Ic Microcomput Syst Ltd 半導体装置のｍｏｓ容量
TW297142B (enExample) 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
JP3030368B2 (ja) 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
CN1146056C (zh) * 1994-06-02 2004-04-14 株式会社半导体能源研究所 有源矩阵显示器
JP2002057350A (ja) * 1994-08-30 2002-02-22 Seiko Instruments Inc 半導体装置
JP3556307B2 (ja) 1995-02-01 2004-08-18 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置
FR2743649B1 (fr) * 1996-01-17 1998-04-03 Gemplus Card Int Module electronique sans contact, carte etiquette electronique l'incorporant, et leurs procedes de fabrication
JP2000223722A (ja) * 1998-02-25 2000-08-11 Citizen Watch Co Ltd Ｍｉｓ型可変容量コンデンサおよびそれを用いた温度補償型発振器
JP4332244B2 (ja) * 1998-10-30 2009-09-16 シャープ株式会社 Ｍｏｓ型容量素子
JP2001111056A (ja) * 1999-10-06 2001-04-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
EP1281966A3 (en) * 2001-07-30 2003-06-18 Fuji Photo Film Co., Ltd. Method and apparatus for conducting a receptor-ligand reaction
US20040206999A1 (en) * 2002-05-09 2004-10-21 Impinj, Inc., A Delaware Corporation Metal dielectric semiconductor floating gate variable capacitor
JP4136452B2 (ja) * 2002-05-23 2008-08-20 株式会社ルネサステクノロジ 半導体装置及びその製造方法
US6861689B2 (en) * 2002-11-08 2005-03-01 Freescale Semiconductor, Inc. One transistor DRAM cell structure and method for forming
US7939873B2 (en) 2004-07-30 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Capacitor element and semiconductor device

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Publication number Publication date
JP2005340791A (ja) 2005-12-08
US20070210364A1 (en) 2007-09-13
WO2005106961A1 (en) 2005-11-10
KR101155943B1 (ko) 2012-06-18
KR20070012519A (ko) 2007-01-25
US7825447B2 (en) 2010-11-02

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