JP4912718B2 - ダイナミック型半導体メモリ - Google Patents

ダイナミック型半導体メモリ Download PDF

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Publication number
JP4912718B2
JP4912718B2 JP2006093827A JP2006093827A JP4912718B2 JP 4912718 B2 JP4912718 B2 JP 4912718B2 JP 2006093827 A JP2006093827 A JP 2006093827A JP 2006093827 A JP2006093827 A JP 2006093827A JP 4912718 B2 JP4912718 B2 JP 4912718B2
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JP
Japan
Prior art keywords
refresh
address
block
memory
counter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006093827A
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English (en)
Japanese (ja)
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JP2007272938A (ja
JP2007272938A5 (enExample
Inventor
聡 江渡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
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Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006093827A priority Critical patent/JP4912718B2/ja
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to US11/450,472 priority patent/US7630268B2/en
Priority to DE602006006545T priority patent/DE602006006545D1/de
Priority to EP06115323A priority patent/EP1840900B1/en
Priority to TW095120834A priority patent/TWI312515B/zh
Priority to KR1020060062920A priority patent/KR100868713B1/ko
Priority to CN2006100985634A priority patent/CN101047025B/zh
Publication of JP2007272938A publication Critical patent/JP2007272938A/ja
Publication of JP2007272938A5 publication Critical patent/JP2007272938A5/ja
Application granted granted Critical
Publication of JP4912718B2 publication Critical patent/JP4912718B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40618—Refresh operations over multiple banks or interleaving
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2006093827A 2006-03-30 2006-03-30 ダイナミック型半導体メモリ Expired - Fee Related JP4912718B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006093827A JP4912718B2 (ja) 2006-03-30 2006-03-30 ダイナミック型半導体メモリ
DE602006006545T DE602006006545D1 (de) 2006-03-30 2006-06-12 Dynamischer Halbleiterspeicher mit Reduzierung der Häufigkeit von Aktualisierungsbefehlsanfragen und Aktualisierungssteuerverfahren dafür
EP06115323A EP1840900B1 (en) 2006-03-30 2006-06-12 Dynamic semiconductor memory reducing the frequency of occurrence of refresh command request and refresh control method thereof
TW095120834A TWI312515B (en) 2006-03-30 2006-06-12 Dynamic semiconductor memory reducing the frequency of occurrence of refresh command request and refresh control method thereof
US11/450,472 US7630268B2 (en) 2006-03-30 2006-06-12 Dynamic semiconductor memory reducing the frequency of occurrence of refresh command request and refresh control method thereof
KR1020060062920A KR100868713B1 (ko) 2006-03-30 2006-07-05 다이내믹형 반도체 메모리 및 그 리프레시 제어 방법
CN2006100985634A CN101047025B (zh) 2006-03-30 2006-07-06 动态半导体存储器及其刷新控制方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006093827A JP4912718B2 (ja) 2006-03-30 2006-03-30 ダイナミック型半導体メモリ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011255374A Division JP5333566B2 (ja) 2011-11-22 2011-11-22 ダイナミック型半導体メモリのリフレッシュ制御方法

Publications (3)

Publication Number Publication Date
JP2007272938A JP2007272938A (ja) 2007-10-18
JP2007272938A5 JP2007272938A5 (enExample) 2009-01-29
JP4912718B2 true JP4912718B2 (ja) 2012-04-11

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JP2006093827A Expired - Fee Related JP4912718B2 (ja) 2006-03-30 2006-03-30 ダイナミック型半導体メモリ

Country Status (7)

Country Link
US (1) US7630268B2 (enExample)
EP (1) EP1840900B1 (enExample)
JP (1) JP4912718B2 (enExample)
KR (1) KR100868713B1 (enExample)
CN (1) CN101047025B (enExample)
DE (1) DE602006006545D1 (enExample)
TW (1) TWI312515B (enExample)

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Also Published As

Publication number Publication date
KR100868713B1 (ko) 2008-11-13
JP2007272938A (ja) 2007-10-18
EP1840900A1 (en) 2007-10-03
TWI312515B (en) 2009-07-21
US20070230264A1 (en) 2007-10-04
DE602006006545D1 (de) 2009-06-10
CN101047025B (zh) 2010-04-21
KR20070098390A (ko) 2007-10-05
EP1840900B1 (en) 2009-04-29
TW200737190A (en) 2007-10-01
CN101047025A (zh) 2007-10-03
US7630268B2 (en) 2009-12-08

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