JP4909448B2 - 窒化物系半導体素子およびその製造方法 - Google Patents

窒化物系半導体素子およびその製造方法 Download PDF

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JP4909448B2
JP4909448B2 JP2011532423A JP2011532423A JP4909448B2 JP 4909448 B2 JP4909448 B2 JP 4909448B2 JP 2011532423 A JP2011532423 A JP 2011532423A JP 2011532423 A JP2011532423 A JP 2011532423A JP 4909448 B2 JP4909448 B2 JP 4909448B2
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layer
plane
nitride
based semiconductor
gan
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Expired - Fee Related
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Japanese (ja)
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JPWO2011125289A1 (ja
Inventor
俊哉 横川
満明 大屋
篤志 山田
瑛宏 磯崎
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
JP2011532423A 2010-04-01 2011-03-15 窒化物系半導体素子およびその製造方法 Expired - Fee Related JP4909448B2 (ja)

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JP2010085222 2010-04-01
JP2010085222 2010-04-01
PCT/JP2011/001516 WO2011125289A1 (ja) 2010-04-01 2011-03-15 窒化物系半導体素子およびその製造方法
JP2011532423A JP4909448B2 (ja) 2010-04-01 2011-03-15 窒化物系半導体素子およびその製造方法

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US (1) US20130001513A1 (https=)
EP (1) EP2555257A1 (https=)
JP (2) JP4909448B2 (https=)
CN (1) CN102696122A (https=)
WO (1) WO2011125289A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659926B2 (ja) 2009-04-02 2011-03-30 パナソニック株式会社 窒化物系半導体素子およびその製造方法
CN104218447B (zh) * 2013-05-31 2018-03-13 山东华光光电子股份有限公司 一种半导体激光器芯片欧姆接触电极及其制备方法与应用
US11195973B1 (en) * 2019-05-17 2021-12-07 Facebook Technologies, Llc III-nitride micro-LEDs on semi-polar oriented GaN
US11175447B1 (en) 2019-08-13 2021-11-16 Facebook Technologies, Llc Waveguide in-coupling using polarized light emitting diodes

Citations (8)

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JPH08306643A (ja) * 1995-04-28 1996-11-22 Sumitomo Chem Co Ltd ３−５族化合物半導体用電極および発光素子
JP2000101139A (ja) * 1998-09-25 2000-04-07 Toshiba Corp 半導体発光素子及びその製造方法並びに半導体発光装置
JP2007200932A (ja) * 2006-01-23 2007-08-09 Rohm Co Ltd 窒化物半導体素子の製造方法
JP2008091354A (ja) * 2005-11-22 2008-04-17 Sharp Corp 発光素子及びその製造方法ならびに発光素子を備えたバックライトユニット及びその製造方法
JP2009065196A (ja) * 2004-07-29 2009-03-26 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
JP2009146980A (ja) * 2007-12-12 2009-07-02 Showa Denko Kk 発光ダイオード及びその製造方法
JP2010062460A (ja) * 2008-09-05 2010-03-18 Sharp Corp 窒化物半導体発光素子
WO2010113399A1 (ja) * 2009-04-02 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法

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JP2001308462A (ja) 2000-04-21 2001-11-02 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
JP2003332697A (ja) 2002-05-09 2003-11-21 Sony Corp 窒化物半導体素子及びその製造方法
JP4276020B2 (ja) * 2003-08-01 2009-06-10 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
KR100624411B1 (ko) * 2003-08-25 2006-09-18 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
KR100647278B1 (ko) * 2003-10-27 2006-11-17 삼성전자주식회사 ＩＩＩ - Ｖ 족 ＧａＮ 계 화합물 반도체 및 이에적용되는 ｐ-형 전극
JP2006344763A (ja) * 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd 接合ゲート型電界効果トランジスタの製造方法
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Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
JPH08306643A (ja) * 1995-04-28 1996-11-22 Sumitomo Chem Co Ltd ３−５族化合物半導体用電極および発光素子
JP2000101139A (ja) * 1998-09-25 2000-04-07 Toshiba Corp 半導体発光素子及びその製造方法並びに半導体発光装置
JP2009065196A (ja) * 2004-07-29 2009-03-26 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
JP2008091354A (ja) * 2005-11-22 2008-04-17 Sharp Corp 発光素子及びその製造方法ならびに発光素子を備えたバックライトユニット及びその製造方法
JP2007200932A (ja) * 2006-01-23 2007-08-09 Rohm Co Ltd 窒化物半導体素子の製造方法
JP2009146980A (ja) * 2007-12-12 2009-07-02 Showa Denko Kk 発光ダイオード及びその製造方法
JP2010062460A (ja) * 2008-09-05 2010-03-18 Sharp Corp 窒化物半導体発光素子
WO2010113399A1 (ja) * 2009-04-02 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法

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JPWO2011125289A1 (ja) 2013-07-08
CN102696122A (zh) 2012-09-26
WO2011125289A1 (ja) 2011-10-13
US20130001513A1 (en) 2013-01-03
EP2555257A1 (en) 2013-02-06
JP2012070016A (ja) 2012-04-05

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