CN102696122A - 氮化物系半导体元件及其制造方法 - Google Patents

氮化物系半导体元件及其制造方法 Download PDF

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Publication number
CN102696122A
CN102696122A CN2011800041735A CN201180004173A CN102696122A CN 102696122 A CN102696122 A CN 102696122A CN 2011800041735 A CN2011800041735 A CN 2011800041735A CN 201180004173 A CN201180004173 A CN 201180004173A CN 102696122 A CN102696122 A CN 102696122A
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CN
China
Prior art keywords
layer
based semiconductor
nitride
face
gan
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Pending
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CN2011800041735A
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English (en)
Chinese (zh)
Inventor
横川俊哉
大屋满明
山田笃志
矶崎瑛宏
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Publication of CN102696122A publication Critical patent/CN102696122A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2011800041735A 2010-04-01 2011-03-15 氮化物系半导体元件及其制造方法 Pending CN102696122A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-085222 2010-04-01
JP2010085222 2010-04-01
PCT/JP2011/001516 WO2011125289A1 (ja) 2010-04-01 2011-03-15 窒化物系半導体素子およびその製造方法

Publications (1)

Publication Number Publication Date
CN102696122A true CN102696122A (zh) 2012-09-26

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Country Link
US (1) US20130001513A1 (https=)
EP (1) EP2555257A1 (https=)
JP (2) JP4909448B2 (https=)
CN (1) CN102696122A (https=)
WO (1) WO2011125289A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104218447A (zh) * 2013-05-31 2014-12-17 山东华光光电子有限公司 一种半导体激光器芯片欧姆接触电极及其制备方法与应用

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659926B2 (ja) 2009-04-02 2011-03-30 パナソニック株式会社 窒化物系半導体素子およびその製造方法
US11195973B1 (en) * 2019-05-17 2021-12-07 Facebook Technologies, Llc III-nitride micro-LEDs on semi-polar oriented GaN
US11175447B1 (en) 2019-08-13 2021-11-16 Facebook Technologies, Llc Waveguide in-coupling using polarized light emitting diodes

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050026398A1 (en) * 2003-08-01 2005-02-03 Toyoda Gosei Co., Ltd. Method of making group III nitride-based compound semiconductor
CN1591917A (zh) * 2003-08-25 2005-03-09 三星电子株式会社 氮化物基发光器件及其制造方法
CN1612300A (zh) * 2003-10-27 2005-05-04 三星电子株式会社 GaN基III－V主族化合物半导体器件和p型电极
CN1971957A (zh) * 2005-11-22 2007-05-30 夏普株式会社 发光元件及其制造方法和具备发光元件的背光灯单元及其制造方法
JP2007200932A (ja) * 2006-01-23 2007-08-09 Rohm Co Ltd 窒化物半導体素子の製造方法
CN102007610A (zh) * 2009-04-03 2011-04-06 松下电器产业株式会社 氮化物系半导体元件及其制造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306643A (ja) * 1995-04-28 1996-11-22 Sumitomo Chem Co Ltd ３−５族化合物半導体用電極および発光素子
JP3525061B2 (ja) * 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
JP2001308462A (ja) 2000-04-21 2001-11-02 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
JP2003332697A (ja) 2002-05-09 2003-11-21 Sony Corp 窒化物半導体素子及びその製造方法
KR100895452B1 (ko) * 2004-07-29 2009-05-07 쇼와 덴코 가부시키가이샤 반도체 발광소자용 양전극
JP2006344763A (ja) * 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd 接合ゲート型電界効果トランジスタの製造方法
JP5214128B2 (ja) * 2005-11-22 2013-06-19 シャープ株式会社 発光素子及び発光素子を備えたバックライトユニット
JP2007324421A (ja) * 2006-06-01 2007-12-13 Rohm Co Ltd 窒化物半導体素子
JP2008258503A (ja) * 2007-04-06 2008-10-23 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
US7701995B2 (en) * 2007-07-06 2010-04-20 Nichia Corporation Nitride semiconductor laser element
JP4974867B2 (ja) * 2007-12-12 2012-07-11 昭和電工株式会社 発光ダイオード及びその製造方法
JP2010062460A (ja) * 2008-09-05 2010-03-18 Sharp Corp 窒化物半導体発光素子
US20110156048A1 (en) 2008-11-06 2011-06-30 Toshiya Yokogawa Nitride-based semiconductor device and method for fabricating the same
JP4659926B2 (ja) * 2009-04-02 2011-03-30 パナソニック株式会社 窒化物系半導体素子およびその製造方法
US8390010B2 (en) * 2010-03-25 2013-03-05 Micron Technology, Inc. Solid state lighting devices with cellular arrays and associated methods of manufacturing

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050026398A1 (en) * 2003-08-01 2005-02-03 Toyoda Gosei Co., Ltd. Method of making group III nitride-based compound semiconductor
CN1591917A (zh) * 2003-08-25 2005-03-09 三星电子株式会社 氮化物基发光器件及其制造方法
CN1612300A (zh) * 2003-10-27 2005-05-04 三星电子株式会社 GaN基III－V主族化合物半导体器件和p型电极
CN1971957A (zh) * 2005-11-22 2007-05-30 夏普株式会社 发光元件及其制造方法和具备发光元件的背光灯单元及其制造方法
JP2007200932A (ja) * 2006-01-23 2007-08-09 Rohm Co Ltd 窒化物半導体素子の製造方法
CN102007610A (zh) * 2009-04-03 2011-04-06 松下电器产业株式会社 氮化物系半导体元件及其制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104218447A (zh) * 2013-05-31 2014-12-17 山东华光光电子有限公司 一种半导体激光器芯片欧姆接触电极及其制备方法与应用
CN104218447B (zh) * 2013-05-31 2018-03-13 山东华光光电子股份有限公司 一种半导体激光器芯片欧姆接触电极及其制备方法与应用

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JPWO2011125289A1 (ja) 2013-07-08
JP4909448B2 (ja) 2012-04-04
WO2011125289A1 (ja) 2011-10-13
US20130001513A1 (en) 2013-01-03
EP2555257A1 (en) 2013-02-06
JP2012070016A (ja) 2012-04-05

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Application publication date: 20120926