JP4901090B2 - 欠陥検査方法及び欠陥検出装置 - Google Patents

欠陥検査方法及び欠陥検出装置 Download PDF

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Publication number
JP4901090B2
JP4901090B2 JP2004322905A JP2004322905A JP4901090B2 JP 4901090 B2 JP4901090 B2 JP 4901090B2 JP 2004322905 A JP2004322905 A JP 2004322905A JP 2004322905 A JP2004322905 A JP 2004322905A JP 4901090 B2 JP4901090 B2 JP 4901090B2
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JP
Japan
Prior art keywords
substrate
light
pattern
defect
polarized
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Expired - Lifetime
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JP2004322905A
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English (en)
Japanese (ja)
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JP2006105951A (ja
JP2006105951A5 (enExample
Inventor
健雄 大森
和彦 深澤
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Nikon Corp
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Nikon Corp
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Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2004322905A priority Critical patent/JP4901090B2/ja
Priority to CNA2005101133586A priority patent/CN1758022A/zh
Priority to KR1020050093138A priority patent/KR20060052010A/ko
Priority to US11/243,425 priority patent/US7643137B2/en
Priority to TW094134913A priority patent/TW200626888A/zh
Publication of JP2006105951A publication Critical patent/JP2006105951A/ja
Publication of JP2006105951A5 publication Critical patent/JP2006105951A5/ja
Priority to US12/591,298 priority patent/US8446578B2/en
Priority to KR1020120021482A priority patent/KR101275343B1/ko
Application granted granted Critical
Publication of JP4901090B2 publication Critical patent/JP4901090B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95692—Patterns showing hole parts, e.g. honeycomb filtering structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/314—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry with comparison of measurements at specific and non-specific wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2004322905A 2003-03-26 2004-10-06 欠陥検査方法及び欠陥検出装置 Expired - Lifetime JP4901090B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004322905A JP4901090B2 (ja) 2004-10-06 2004-10-06 欠陥検査方法及び欠陥検出装置
CNA2005101133586A CN1758022A (zh) 2004-10-06 2005-09-28 缺陷检查方法
KR1020050093138A KR20060052010A (ko) 2004-10-06 2005-10-04 결함 검사 방법
US11/243,425 US7643137B2 (en) 2003-03-26 2005-10-05 Defect inspection apparatus, defect inspection method and method of inspecting hole pattern
TW094134913A TW200626888A (en) 2004-10-06 2005-10-06 Defect inspection method
US12/591,298 US8446578B2 (en) 2003-03-26 2009-11-16 Defect inspection apparatus, defect inspection method and method of inspecting hole pattern
KR1020120021482A KR101275343B1 (ko) 2004-10-06 2012-02-29 결함 검사 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004322905A JP4901090B2 (ja) 2004-10-06 2004-10-06 欠陥検査方法及び欠陥検出装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011023349A Division JP5287891B2 (ja) 2011-02-04 2011-02-04 欠陥検査方法

Publications (3)

Publication Number Publication Date
JP2006105951A JP2006105951A (ja) 2006-04-20
JP2006105951A5 JP2006105951A5 (enExample) 2007-10-18
JP4901090B2 true JP4901090B2 (ja) 2012-03-21

Family

ID=36375851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004322905A Expired - Lifetime JP4901090B2 (ja) 2003-03-26 2004-10-06 欠陥検査方法及び欠陥検出装置

Country Status (4)

Country Link
JP (1) JP4901090B2 (enExample)
KR (2) KR20060052010A (enExample)
CN (1) CN1758022A (enExample)
TW (1) TW200626888A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060099344A1 (en) 2004-11-09 2006-05-11 Eastman Kodak Company Controlling the vaporization of organic material
JP4548385B2 (ja) * 2006-05-10 2010-09-22 株式会社ニコン 表面検査装置
JP4692892B2 (ja) * 2006-06-01 2011-06-01 株式会社ニコン 表面検査装置
JP5201350B2 (ja) 2006-07-14 2013-06-05 株式会社ニコン 表面検査装置
WO2008033779A2 (en) * 2006-09-12 2008-03-20 Rudolph Technologies, Inc. Polarization imaging
KR101467010B1 (ko) * 2007-06-13 2014-12-01 가부시키가이샤 니콘 검사 장치, 검사 방법 및 프로그램
DE112008002816B4 (de) * 2007-10-23 2014-07-31 Shibaura Mechatronics Corp. Prüfverfahren anhand von erfassten Bildern und Prüfvorrichtung
WO2009125805A1 (ja) * 2008-04-09 2009-10-15 株式会社ニコン 表面検査方法および表面検査装置
JP2009300216A (ja) * 2008-06-12 2009-12-24 Nikon Corp 観察装置
JP5252286B2 (ja) * 2008-11-14 2013-07-31 株式会社ニコン 表面検査方法、表面検査装置および検査方法
TW201100787A (en) 2009-02-18 2011-01-01 Nikon Corp Surface examining device and surface examining method
WO2012081587A1 (ja) * 2010-12-14 2012-06-21 株式会社ニコン 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス
JP6406492B2 (ja) * 2014-01-27 2018-10-17 株式会社ニコン 評価方法、評価装置、及び露光システム
US9599573B2 (en) * 2014-12-02 2017-03-21 Kla-Tencor Corporation Inspection systems and techniques with enhanced detection
CN108180826B (zh) * 2017-12-20 2023-12-22 深圳湾新科技有限公司 一种锂电池卷绕层边界的检测设备及检测方法
CN110132996A (zh) * 2019-06-06 2019-08-16 德淮半导体有限公司 缺陷检测装置及其检测方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS643545A (en) * 1987-06-26 1989-01-09 Hitachi Ltd Method and apparatus for inspection
JPS649306A (en) * 1987-07-01 1989-01-12 Fujitsu Ltd Detector for light transmitting fine pattern
JP3692685B2 (ja) * 1997-02-19 2005-09-07 株式会社ニコン 欠陥検査装置
JPH10325805A (ja) * 1997-05-23 1998-12-08 Nikon Corp 半導体ウエハの自動検査装置
JP3982017B2 (ja) * 1997-08-05 2007-09-26 株式会社ニコン 欠陥検査装置
JPH1164234A (ja) * 1997-08-20 1999-03-05 Advantest Corp 異物検出方法、および異物検出装置
KR100374762B1 (ko) * 1998-07-28 2003-03-04 히다치 덴시 엔지니어링 가부시키 가이샤 결함 검사 장치 및 그 방법
JP4184543B2 (ja) * 1999-06-10 2008-11-19 株式会社日立製作所 光学像検出方法および外観検査装置
JP3769996B2 (ja) * 1999-09-20 2006-04-26 三菱電機株式会社 欠陥検査用半導体基板、半導体基板の検査方法および半導体基板検査用モニター装置
JP2001165632A (ja) * 1999-12-03 2001-06-22 Sony Corp 検査装置及び検査方法
JP4153652B2 (ja) * 2000-10-05 2008-09-24 株式会社東芝 パターン評価装置及びパターン評価方法
JP2002257747A (ja) * 2001-02-27 2002-09-11 Matsushita Electric Ind Co Ltd 欠陥検査装置
KR100492159B1 (ko) * 2002-10-30 2005-06-02 삼성전자주식회사 기판 검사 장치
JP4183492B2 (ja) * 2002-11-27 2008-11-19 株式会社日立製作所 欠陥検査装置および欠陥検査方法

Also Published As

Publication number Publication date
JP2006105951A (ja) 2006-04-20
KR20120036923A (ko) 2012-04-18
TW200626888A (en) 2006-08-01
CN1758022A (zh) 2006-04-12
KR20060052010A (ko) 2006-05-19
KR101275343B1 (ko) 2013-06-17

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